Hefei Core Storage Electronic Limited

A data storing method, a memory storage device, and a memory controller are provided. The method includes: obtaining a plurality of program/erase counts and a plurality of program/erase period values of a plurality of physical erasing units in a storage area; calculating a plurality of data cold and hot degrees according to the plurality of program/erase counts and the plurality of program/erase period values; selecting a first physical erasing unit according to the plurality of data cold and hot degrees, and selecting a second physical erasing unit according to the plurality of data cold and hot degrees; and writing data stored in the first physical erasing unit to the second physical erasing unit.

A data writing method, a memory storage device, and a memory control circuit unit are provided. The data writing method includes the following: calculating a first number according to a ratio of a capacity of at least one first system table to a capacity of a physical block; calculating a second number according to a ratio of a capacity of at least one second system table to the capacity of the physical block; and obtaining at least one physical block from a plurality of physical blocks as a first virtual block and a second virtual block based on the first number and the second number respectively.

A voltage adjustment method, a memory storage device and a memory control circuit unit are disclosed. The method includes: reading a first physical unit among the physical units based on a first read voltage to obtain a first count value, wherein the first count value reflects a total number of memory cells each having a threshold voltage lower than the first read voltage; obtaining a second count value based on a difference between the first count value and a first default value; bringing the second count value into a target formula to obtain a voltage adjustment parameter; adjusting the first read voltage to a second read voltage according to the voltage adjustment parameter; and reading the first physical unit based on the second read voltage.

A memory operation control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes the following. Management data is established, which includes status recording data. First status information corresponding to a first physical unit is stored in the status recording data. An operation command is received from a host system. The management data is queried according to the operation command. Whether to allow an execution of the operation command on the first physical unit is determined according to a query result.

Disclosed are a service lifetime monitoring and early warning method, a memory storage device, and a memory control circuit unit. The method includes: reading a history information from a rewritable non-volatile memory module, calculating a remaining lifetime based on the history information and a user habit, generating an early warning signal, and outputting the remaining lifetime and the early warning signal in response to the remaining lifetime being lower than a preset lifetime.

A data arrangement method based on file system, a memory storage device and a memory control circuit unit are disclosed. The method includes: analyzing a file system stored in a system region to obtain a plurality of first logical units to which a first file belongs and first distribution information of a plurality of first physical units in a storage region, wherein the first physical units are mapped by the first logical units; determining whether to activate a data arrangement operation on the first file according to the first distribution information; after the data arrangement operation on the first file is activated, reading first data belonging to the first file from the first physical units; and writing, sequentially, the read first data to at least one second physical unit in the storage region.

A memory control method, a memory storage device and a memory control circuit unit are provided. The method includes: setting preset read count thresholds corresponding to physical erasing units respectively; in a background operation, in response to a read count of a first physical erasing unit in the physical erasing units being greater than its corresponding preset read count threshold, reading word lines in the first physical erasing unit to obtain first error bit amounts; determining whether a refresh operation needs to be performed on the first physical erasing unit according to first error bit amounts; in response to no need to perform the refresh operation on the first physical erasing unit, selecting a first word line with the largest first error bit amount in the word lines, and detecting a voltage distribution variation of the first word line; and calculating a new read count threshold of the first physical erasing unit according to the voltage distribution variation.

A performance match method of memory, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving a performance match command from a host system; in response to the performance match command, adjusting an operation setting of a memory storage device to match a performance of the memory storage device with a performance requirement of the host system; and interacting with the host system based on the adjusted operation setting.

A memory polling method, a memory storage device and a memory control circuit unit are provided. The memory polling method includes: detecting a plurality of busy times corresponding to a plurality of physical units when executing a plurality of first commands; counting the busy times corresponding to the physical units to generate a count statistic value, and determine a delay time based on the count statistic value; and transmitting a plurality of status requests to a rewritable non-volatile memory module after the delay time.

A valid node management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: establishing a valid node management table corresponding to a first physical management unit; storing valid node management data in the valid node management table, wherein the valid node management data reflects a distribution status of a valid node in the first physical management unit; receiving an operation command from a host system, wherein the operation command is configured to change a data storage status of the first physical management unit; and updating the valid node management data in the valid node management table in response to the operation command.