US20250285931A1
ELECTRONIC PACKAGE WITH INTEGRATED TOP SIDE HEAT SINK
Publication
Application
Classifications
IPC Classifications
CPC Classifications
Applicants
Navitas Semiconductor Limited
Inventors
Oseob Jeon
Abstract
An electronic device is disclosed. The electronic device includes a die-attach pad, a semiconductor transistor having: a top surface positioned opposite of a bottom surface; a gate terminal and a source terminal disposed at the top surface; a drain terminal disposed at the bottom surface, a first lead separate from the die-attach pad and including a base, the base electrically and mechanically connected to the die-attach pad, a second lead separate from the die-attach pad and electrically isolated from the die-attach pad, the second lead electrically connected to the gate terminal, and a third lead separate from the die-attach pad and electrically isolated from the die-attach pad, the third lead electrically connected to the source terminal, and an electrically insulative encapsulant at least partially encapsulating the die-attach pad, the semiconductor transistor, the first lead, the second lead and the third lead.
Figures
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001]This application claims priority to U.S. provisional patent application No. 63/563,269, for “ELECTRONIC PACKAGE WITH INTEGRATED TOP SIDE HEAT SINK” filed on Mar. 8, 2024, which is hereby incorporated by reference in entirety for all purposes.
FIELD
[0002]The described embodiments relate generally to packaged electronics containing one or more semiconductor dies. More particularly, the present embodiments relate to an electronic package with an integrated top side heat sink that provides cooling for the one or more semiconductor dies.
BACKGROUND
[0003]Electronic devices such as computers, servers and televisions, among others, employ numerous packaged semiconductor devices. Some semiconductor devices require specialized electronic packages to accommodate unique physical configurations and performance requirements. New electronic package designs and manufacturing techniques may be required to meet the needs of some semiconductor devices
SUMMARY
[0004]In some embodiments, an electronic device is disclosed. The electronic device includes a metal plate having an interior surface opposite an exterior surface; a semiconductor transistor including: a top surface positioned opposite of a bottom surface; a gate terminal and a source terminal disposed at the top surface; a drain terminal disposed at the bottom surface, wherein the bottom surface of the semiconductor transistor is attached to the interior surface of the metal plate electrically coupling the drain terminal to the metal plate; a drain lead, separate from the metal plate, the drain lead including a base and a pair of opposing fingers extending from the base to respective distal ends, wherein the base is mechanically and electrically connected to the interior surface of the metal plate forming an electrical connection to the drain terminal of the semiconductor transistor, the base positioned on the metal plate adjacent the semiconductor transistor; a source lead, separate from and electrically isolated from the metal plate, the source lead including an interior portion and an exterior portion, the interior portion positioned above the interior surface of the metal plate and positioned adjacent the semiconductor transistor; a source conductor electrically connecting the source terminal to the interior portion of the source lead; a gate lead, separate from and electrically isolated from the metal plate, the gate lead including an interior region and an exterior region, the interior region positioned above the interior surface of the metal plate and positioned adjacent the semiconductor transistor; a gate conductor electrically connecting the gate terminal to the interior region of the gate lead; and an electrically insulative encapsulant at least partially encapsulating the metal plate, the semiconductor transistor, the drain lead, the source lead, the source conductor, the gate lead and the gate conductor, wherein the exterior surface of the metal plate forms a portion of an exterior surface of the electronic device and wherein the opposing fingers of the drain lead extend out of an exterior surface of the electrically insulative encapsulant at a first side surface of the electronic device and wherein the exterior portion of the source lead and the exterior region of the gate lead extend out of the exterior surface of the electrically insulative encapsulant at a second side surface of the electronic device, and wherein the first side surface is opposite of the second side surface.
[0005]In some embodiments, the base is connected to the interior surface of the metal plate via a joint that is soldered.
[0006]In some embodiments, the base is connected to the interior surface of the metal plate via a joint that is laser welded.
[0007]In some embodiments, at least a portion of the exterior surface of the metal plate is exposed.
[0008]In some embodiments, the source conductor is wirebonds.
[0009]In some embodiments, the electronic device further includes a thermally conductive structure coupled to the exterior surface.
[0010]In some embodiments, at least a portion of the thermally conductive structure is exposed.
[0011]In some embodiments, a method of forming an electronic device is disclosed. The method includes forming a die-attach pad; providing a semiconductor transistor including: a top surface positioned opposite of a bottom surface; a gate terminal and a source terminal disposed at the top surface; a drain terminal disposed at the bottom surface; attaching the bottom surface of the semiconductor transistor to the die-attach pad electrically coupling the drain terminal to the die-attach pad; forming a first lead that is separate from the die-attach pad; electrically coupling the first lead to the die-attach pad, wherein the first lead has a portion disposed at a first side of the electronic device; forming a second lead that is separate from and electrically isolated from the die-attach pad; connecting the second lead to the gate terminal, wherein a portion of the second lead is disposed adjacent a second side of the electronic device, wherein the first side of the electronic device is opposite the second side of the electronic device; forming a third lead that is separate from and electrically isolated from the die-attach pad; connecting the third lead to the source terminal, wherein the third lead is disposed at the second side of the electronic device; and forming an electrically insulative encapsulant around at least a portion of each of the die-attach pad, the semiconductor transistor, the first lead, the second lead and the third lead.
[0012]In some embodiments, the method further includes coupling a thermally conductive structure to a top surface of the die-attach pad.
[0013]In some embodiments in the method of forming the electronic device, the first lead is attached to the die-attach pad via a joint that is soldered or laser welded.
[0014]In some embodiments in the method of forming the electronic device, the top surface of the die-attach pad forms a portion of an exterior surface of the electronic device.
[0015]In some embodiments, an electronic device is disclosed. The electronic device includes a die-attach pad; a semiconductor transistor including: a top surface positioned opposite of a bottom surface; a gate terminal and a source terminal disposed at the top surface; a drain terminal disposed at the bottom surface, wherein the bottom surface of the semiconductor transistor is attached to the die-attach pad electrically coupling the drain terminal to the die-attach pad; a first lead separate from the die-attach pad and including a base, the base electrically and mechanically connected to the die-attach pad, wherein a portion of the first lead is disposed adjacent a first side of the electronic device; a second lead separate from the die-attach pad and electrically isolated from the die-attach pad, the second lead electrically connected to the gate terminal and disposed adjacent a second side of the electronic device, wherein the first side of the electronic device is opposite the second side of the electronic device; and a third lead separate from the die-attach pad and electrically isolated from the die-attach pad, the third lead electrically connected to the source terminal and positioned adjacent the second side of the electronic device; and an electrically insulative encapsulant at least partially encapsulating the die-attach pad, the semiconductor transistor, the first lead, the second lead and the third lead.
[0016]In some embodiments, the bottom surface of the semiconductor transistor is attached to a first surface of the die-attach pad.
[0017]In some embodiments, a second surface of the die-attach pad forms a portion of an exterior surface of the electronic device.
BRIEF DESCRIPTION OF THE DRAWINGS
[0018]
[0019]
[0020]
[0021]
[0022]
[0023]
DETAILED DESCRIPTION
[0024]Certain aspects of the present disclosure relate to an electronic package with an integrated top side plate. The electronic package can be mounted on a printed circuit board (PCB) so that the top side plate faces away from the PCB. The electronic package can include an overhang with legs that facilitate an electrical connection between the top side plate and the PCB. In some examples, the top side plate can be separate from the overhang and the overhang can be soldered or sintered onto the top side plate. Various inventive embodiments are described herein, including methods, processes, systems, devices, and the like.
[0025]Terms such as “top”, “bottom”, “up”, or “down” are used herein for illustrative purposes only and do not indicate an absolute orientation of any component or part thereof. For example, a side of a device that directly abuts a surface of a PCB is herein sometimes referred to as a bottom surface, regardless of an overall orientation of a device-PCB assembly. Similarly, a side of the device that is on an opposite side of such a bottom surface, and therefore faces away from the surface of the PCB, is sometimes herein referred to as a top surface, again only indicating an orientation relative to the PCB. The terms up and down are used in a similar sense herein.
[0026]
[0027]Portions of the electronic package 100 can be exposed and not covered up by the body 104. For example, an upper surface of the top side plate 102 and/or two separate portions of the overhang can be exposed after molding. Having two separate portions of the overhang exposed can reduce thermal and mechanical stress for the electronic package 100. The top side plate 102 can include a region that is thicker than the overhang portion of the top side plate 102 and may be formed via dual-gauge stamping or other suitable process. In some examples, the top side plate 102 can be separate from the overhang and the overhang can be soldered, sintered, welded, or attached via other suitable process to the top side plate 102. The top side plate 102 and separate overhang can be formed of a single material or can be formed from different materials.
[0028]A molding process that forms the body 104 can involve locking by molding of the top side plate 102. The locking by molding feature can increase a thermal and mechanical robustness of the top side plate 102. By performing a half etch (e.g., removing a portion of a thickness of the top plate) to portions of a boundary of the top side plate 102, protrusions, such as protrusion 112, can form in the top side plate 102 during the molding process as the mold material fills in portions removed by the half etch. Although six protrusions are shown in
[0029]The electronic package 100 can also include a semiconductor die (not shown in
[0030]The electronic package 100 can be mounted on a printed circuit board (PCB) so that the top side plate 102 faces away from the PCB. The leads 108A, 108B can facilitate thermal or electrical connection of the top side plate 102 to, for example, the PCB. The electronic package 100 can also include pins, such as pin 106. Although there are seven pins shown in
[0031]
[0032]
[0033]
[0034]The thin region of electronic package 100 can include a plurality of leads that extend in an opposite direction to the exposed top surface of the thick leadframe and can facilitate an electrical connection of the leadframe to, for example, a PCB. The electronic package 100 can also include pins and each of the pins can be connected to a semiconductor die 214 by, for example, wire bonding, copper clips, flip chip bumps, or other suitable interconnects. The pins can extend in a direction opposite the exposed top surface of the thick leadframe 102 to facilitate additional electrical connections to the PCB. A bottom surface of the thick leadframe 102 of electronic package 100 can be attached to the semiconductor die. The cross-section view illustrates the electronic package 100 after a molding process that can encapsulate the semiconductor die.
[0035]In some embodiments, the semiconductor die 214 may be a vertical transistor device such as a silicon carbide field-effect transistor (FET). A drain terminal (e.g., bottom surface) of the transistor may be mechanically and electrically connected to the leadframe, a source terminal may be connected to a plurality of the pins via wirebonds and a gate terminal of the transistor may be connected to one or more of the pins via wirebonds. In some embodiments a kelvin sense pin may be connected to the source terminal in parallel with the source pins. The drain terminal may be electrically connected to the circuit board via the plurality of leads.
[0036]
[0037]The leads can include five common source leads 548, a Kelvin source lead 544, and a gate lead 546. The gate lead 546 can be connected to a gate bonding pad 542 that is positioned on the semiconductor die 214. The Kelvin source lead 544 and the gate lead 546 can be directly connected to the semiconductor die 214 by, for example, wirebonds 216, clip, direct attachment, flip chip, or other suitable connection. Each of the five common source leads can be monolithically formed with the monolithic source wirebond pad 524 or may be attached (e.g., via a solder connection) to the monolithic source wire bond pad. The source wirebond pad 524 may be coupled to a source bonding pad 540 vi wirebonds, clip, direct attachment, flip chip, or other suitable connection. The monolithic source wire bond pad can be insulated from the bottom side of the top side plate via a gap that is filled with mold material. Portions of the monolithic source wire bond pad can be segmented and electrically isolated to accommodate separate electric connections between the semiconductor die and each of the five common source leads. The semiconductor die 214 can be electrically connected to each of the five common source leads via wire bonding connections to segments of the monolithic source wire bond pad. All of the leads can extend from the electronic package 100 to form electrical connections on one end with a PCB.
[0038]
[0039]It should be appreciated that the specific steps illustrated in
[0040]The specification and drawings are, accordingly, to be regarded in an illustrative rather than a restrictive sense. It will, however, be evident that various modifications and changes may be made thereunto without departing from the broader spirit and scope of the disclosure as set forth in the claims.
[0041]Other variations are within the spirit of the present disclosure. Thus, while the disclosed techniques are susceptible to various modifications and alternative constructions, certain illustrated embodiments thereof are shown in the drawings and have been described above in detail. It should be understood, however, that there is no intention to limit the disclosure to the specific form or forms disclosed, but on the contrary, the intention is to cover all modifications, alternative constructions and equivalents falling within the spirit and scope of the disclosure, as defined in the appended claims.
[0042]The use of the terms “a” and “an” and “the” and similar referents in the context of describing the disclosed embodiments (especially in the context of the following claims) are to be construed to cover both the singular and the plural, unless otherwise indicated herein or clearly contradicted by context. The terms “comprising,” “having,” “including,” and “containing” are to be construed as open-ended terms (i.e., meaning “including, but not limited to,”) unless otherwise noted. The term “connected” is to be construed as partly or wholly contained within, attached to, or joined together, even if there is something intervening. The phrase “based on” should be understood to be open-ended, and not limiting in any way, and is intended to be interpreted or otherwise read as “based at least in part on,” where appropriate. Recitation of ranges of values herein are merely intended to serve as a shorthand method of referring individually to each separate value falling within the range, unless otherwise indicated herein, and each separate value is incorporated into the specification as if it were individually recited herein. All methods described herein can be performed in any suitable order unless otherwise indicated herein or otherwise clearly contradicted by context. The use of any and all examples, or exemplary language (e.g., “such as”) provided herein, is intended merely to better illuminate embodiments of the disclosure and does not pose a limitation on the scope of the disclosure unless otherwise claimed. No language in the specification should be construed as indicating any non-claimed element as essential to the practice of the disclosure.
[0043]Disjunctive language such as the phrase “at least one of X, Y, or Z,” unless specifically stated otherwise, is otherwise understood within the context as used in general to present that an item, term, etc., may be either X, Y, or Z, or any combination thereof (e.g., X, Y, and/or Z). Thus, such disjunctive language is not generally intended to, and should not, imply that certain embodiments require at least one of X, at least one of Y, or at least one of Z to each be present. Additionally, conjunctive language such as the phrase “at least one of X, Y, and Z,” unless specifically stated otherwise, should also be understood to mean X, Y, Z, or any combination thereof, including “X, Y, and/or Z.”
[0044]Preferred embodiments of this disclosure are described herein, including the best mode known to the inventors for carrying out the disclosure. Variations of those preferred embodiments may become apparent to those of ordinary skill in the art upon reading the foregoing description. The inventors expect skilled artisans to employ such variations as appropriate, and the inventors intend for the disclosure to be practiced otherwise than as specifically described herein. Accordingly, this disclosure includes all modifications and equivalents of the subject matter recited in the claims appended hereto as permitted by applicable law. Moreover, any combination of the above-described elements in all possible variations thereof is encompassed by the disclosure unless otherwise indicated herein or otherwise clearly contradicted by context.
[0045]All references, including publications, patent applications, and patents, cited herein are hereby incorporated by reference to the same extent as if each reference were individually and specifically indicated to be incorporated by reference and were set forth in its entirety herein.
Claims
What is claimed is:
1. An electronic device comprising:
a metal plate having an interior surface opposite an exterior surface;
a semiconductor transistor including:
a top surface positioned opposite of a bottom surface;
a gate terminal and a source terminal disposed at the top surface;
a drain terminal disposed at the bottom surface, wherein the bottom surface of the semiconductor transistor is attached to the interior surface of the metal plate electrically coupling the drain terminal to the metal plate;
a drain lead, separate from the metal plate, the drain lead including a base and a pair of opposing fingers extending from the base to respective distal ends, wherein the base is mechanically and electrically connected to the interior surface of the metal plate forming an electrical connection to the drain terminal of the semiconductor transistor, the base positioned on the metal plate adjacent the semiconductor transistor;
a source lead, separate from and electrically isolated from the metal plate, the source lead including an interior portion and an exterior portion, the interior portion positioned above the interior surface of the metal plate and positioned adjacent the semiconductor transistor;
a source conductor electrically connecting the source terminal to the interior portion of the source lead;
a gate lead, separate from and electrically isolated from the metal plate, the gate lead including an interior region and an exterior region, the interior region positioned above the interior surface of the metal plate and positioned adjacent the semiconductor transistor;
a gate conductor electrically connecting the gate terminal to the interior region of the gate lead; and
an electrically insulative encapsulant at least partially encapsulating the metal plate, the semiconductor transistor, the drain lead, the source lead, the source conductor, the gate lead and the gate conductor, wherein the exterior surface of the metal plate forms a portion of an exterior surface of the electronic device and wherein the opposing fingers of the drain lead extend out of an exterior surface of the electrically insulative encapsulant at a first side surface of the electronic device and wherein the exterior portion of the source lead and the exterior region of the gate lead extend out of the exterior surface of the electrically insulative encapsulant at a second side surface of the electronic device, and wherein the first side surface is opposite of the second side surface.
2. The electronic device of
3. The electronic device of
4. The electronic device of
5. The electronic device of
6. The electronic device of
7. The electronic device of
8. A method of forming an electronic device, the method comprising:
forming a die-attach pad;
providing a semiconductor transistor including:
a top surface positioned opposite of a bottom surface;
a gate terminal and a source terminal disposed at the top surface;
a drain terminal disposed at the bottom surface;
attaching the bottom surface of the semiconductor transistor to the die-attach pad electrically coupling the drain terminal to the die-attach pad;
forming a first lead that is separate from the die-attach pad;
electrically coupling the first lead to the die-attach pad, wherein the first lead has a portion disposed at a first side of the electronic device;
forming a second lead that is separate from and electrically isolated from the die-attach pad;
connecting the second lead to the gate terminal, wherein a portion of the second lead is disposed adjacent a second side of the electronic device, wherein the first side of the electronic device is opposite the second side of the electronic device;
forming a third lead that is separate from and electrically isolated from the die-attach pad;
connecting the third lead to the source terminal, wherein the third lead is disposed at the second side of the electronic device; and
forming an electrically insulative encapsulant around at least a portion of each of the die-attach pad, the semiconductor transistor, the first lead, the second lead and the third lead.
9. The method of
10. The method of
11. The method of
12. The method of
13. The method of
14. An electronic device comprising:
a die-attach pad;
a semiconductor transistor including:
a top surface positioned opposite of a bottom surface;
a gate terminal and a source terminal disposed at the top surface;
a drain terminal disposed at the bottom surface, wherein the bottom surface of the semiconductor transistor is attached to the die-attach pad electrically coupling the drain terminal to the die-attach pad;
a first lead separate from the die-attach pad and including a base, the base electrically and mechanically connected to the die-attach pad, wherein a portion of the first lead is disposed adjacent a first side of the electronic device;
a second lead separate from the die-attach pad and electrically isolated from the die-attach pad, the second lead electrically connected to the gate terminal and disposed adjacent a second side of the electronic device, wherein the first side of the electronic device is opposite the second side of the electronic device; and
a third lead separate from the die-attach pad and electrically isolated from the die-attach pad, the third lead electrically connected to the source terminal and positioned adjacent the second side of the electronic device; and
an electrically insulative encapsulant at least partially encapsulating the die-attach pad, the semiconductor transistor, the first lead, the second lead and the third lead.
15. The electronic device of
16. The electronic device of
17. The electronic device of
18. The electronic device of
19. The electronic device of
20. The electronic device of