Absolics Inc.

A method of manufacturing a packaging substrate according to the present disclosure includes a preparing step of preparing a panel-level packaging substrate comprising a core substrate, a first redistribution layer disposed on the core substrate, and a second redistribution layer disposed under the core substrate, and an electroless surface treatment step of forming terminals by simultaneously performing electroless surface treatment on an upper surface and a lower surface of the panel-level packaging substrate. The packaging substrate comprises a core layer, the first redistribution layer disposed on the core layer, the second redistribution layer disposed under the core layer, and the terminals disposed on an upper surface of the first redistribution layer and a lower surface of the second redistribution layer. A difference between a maximum thickness value and a minimum thickness value of the terminals formed on the packaging substrate is 5 μm or less.

According to the embodiment, a panel comprises a glass core having a width or length of 10 cm or more, and an upper layer disposed on the glass core and having redistribution lines therein. A unit refers to a portion in which a semiconductor element is disposed within a die layout and is separated into an individual packaging substrate. A plurality of the units are disposed on the panel. A reinforcement structure is disposed on the upper layer, configured to surround at least a portion of the die layout. A first unit comprises a first die layout and a first reinforcement structure disposed on the first die layout. A second unit comprises a second die layout and a second reinforcement structure disposed on the second die layout. The second unit is disposed adjacent to one side of the first unit, and the first reinforcement structure and the second reinforcement structure are disposed separately from each other.

The present invention relates to a substrate transfer apparatus and method, and the substrate transfer apparatus according to one aspect of the present invention includes a lower stage that supports a lower surface of a substrate and moves the substrate upward, and an upper stage that suctions an upper surface of the substrate moved upward by the lower stage and inverts the substrate.

The present invention relates to a substrate transfer robot and a substrate transfer method using the same, and the substrate transfer robot according to one aspect of the present invention includes a body, a robot arm formed with a plurality of joints and rotatably installed on the body to transfer a substrate, a first sensor installed on the robot arm to sense a front edge of the substrate to be supported by the robot arm, a second sensor installed on the robot arm to sense a side edge of the substrate supported by the robot arm, and a controller provided on the body and configured to control the operation of the robot arm based on a value sensed by the first sensor and a value sensed by the second sensor.

A method for manufacturing a core substrate included in a packaging substrate, comprises: operation A, preparing a glass core in which through-holes and a cavity are disposed; operation B, preparing an adhesive laminate in which an adhesive layer is disposed on a lower surface of the glass core; operation C, disposing a cavity element in the cavity of the adhesive laminate; operation D, preparing a fill-in laminate by disposing a dispensing material in a space between the cavity element and a wall surface of the cavity; operation E, preparing an adhesion-strengthening treatment layer by performing an adhesion-strengthening treatment on a surface of the fill-in laminate; operation F, preparing an insulating laminate by forming a first surface insulating layer on an upper surface of the glass core of the fill-in laminate; and operation G, preparing the core substrate by removing the adhesive layer and forming a second surface insulating layer.

The embodiments disclose a laser processing method for a glass substrate and a stage. The method comprises: a placement operation of disposing the glass substrate with a space above a stage on which a venting film is disposed; and a processing operation of irradiating a laser onto the glass substrate to form defects, thereby manufacturing the glass substrate in which the defects are formed. The stage, which is applied to laser processing, comprises: a stage main body; a support rim protruding from the stage main body; a stage cavity surrounded by the support rim and open at a top; and a pin permitted to move vertically; wherein the pin is disposed in the stage cavity in a number of one or two or more, and the stage main body has a metal surface.

Embodiments relate to a glass core for packaging, a packaging substrate, and a method of manufacturing the glass core. A glass core for packaging comprises: plate glass having first and second surfaces facing each other; through-vias penetrating the plate glass in a thickness direction; and a cavity penetrating the first and second surfaces and allowing placement of a semiconductor element therein. The cavity provides a cavity space surrounded by a cavity inner wall, which is an inner wall surface connecting the first and second surfaces of the plate glass. A die block is disposed in the cavity space; the die block has a cavity die and a glass spacer vertically stacked. A distribution material is disposed between the cavity inner wall and the die block. The embodiments alleviate thickness mismatch when embedding a die in the cavity, improve workability and reliability.

A method of manufacturing a packaging substrate according to the present disclosure manufactures a packaging substrate by including a preparation step of providing a base substrate including a core layer and an insulating layer disposed on the core layer and a plasma step of plasma-treating an upper surface of the insulating layer. In the plasma step, an inert gas is applied as a process gas, and a plasma process condition index (Ipp value) defined by the following Equation 1 is 80 seconds or greater. A developed interfacial area ratio (Sdr value) of the upper surface of the insulating layer after completion of the plasma step is 50% or less. [Equation 1] Ipp=Rsb*H In Equation 1, Rsb is a ratio of bias power to source power applied during the plasma step, and His a processing time of the plasma step. In such a case, a redistribution layer having a fine pitch on the core layer may be more precisely implemented.

An embodiment relates to an automatic carrier slot scanning apparatus for glass substrate semiconductor packages for automation of a glass substrate semiconductor package factory, and more particularly, to an automatic carrier slot scanning apparatus for glass substrate semiconductor packages configured to automatically scan positions and the number of glass substrates for slots of a carrier, compare the scanned information with related information of a manufacturing execution system, and thereby achieve synchronization.

A packaging substrate according to the embodiment comprises: a glass core; a wiring layer; and an insulating layer. A measurement point is a point on the surface of the packaging substrate, and ten different measurement points are disposed on the surface. The measurement points are spaced apart by at least 0.05 times the surface length. Er is a value of extreme surface reduced modulus (unit: GPa) measured at the measurement point using a nanoindentation method, Er_av is the average of the extreme surface reduced modulus values measured at the measurement points, and Er_stdev is the standard deviation thereof. The ratio of Er_stdev to Er_av may be 7% or less. The packaging substrate according to the embodiment can reduce overall stress by adjusting variations in the extreme surface modulus according to in-plane location within a certain range.