Aledia

A method for manufacturing an optoelectronic device including a first area including a plurality of three-dimensional structures, and a second area free of said 3D structures, the method including at least a provision of a substrate including a surface layer enabling the nucleation and the growth of the 3D structures, a formation of a buffer layer covering the substrate at the second layer, without covering the first area, a growth of the 3D structures in the first area starting from the surface layer, the growth forming residues above the buffer layer, in the second area, and a first etching configured to eliminate the residues and to stop in the buffer layer.

A method for local removal of semiconductor wires (SW) including the following steps: —Provide a stack of layers including at least a substrate, a nucleation layer, a growth masking layer, and a layer including SW being grown from the nucleation layer through the growth masking layer, —Encapsulate the SW with an encapsulation layer so as to form a composite layer including SW and encapsulating material, —Pattern a hard mask on the composite layer, so as to expose regions of the composite layer, —Perform anisotropic etching of the composite layer in the exposed regions, the anisotropic etching having a selectivity S semicon :S encaps between semiconductor-based material and encapsulating material such as 0.9:1<S semicon :S encaps <1.1:1.

A method for manufacturing an optoelectronic device includes providing a support supporting a plurality of three-dimensional semiconductor structures, forming a sacrificial portion under a first set of 3D structures of the plurality of three-dimensional semiconductor structures, forming a barrier portion around the sacrificial portion, said barrier portion having a basal wall extending under the sacrificial portion, and a lateral wall extending at the edge of the sacrificial portion, forming an access trench up to the sacrificial portion, the access trench extending continuously along the lateral wall of the barrier portion, etching the sacrificial portion from the access trench, and removing the first set of 3D structures.

The invention relates to a display screen comprising a plurality of pixels including at least one first and one second pixel ( 1000, 2000 ) that are in contact, the first pixel comprising at least one first subpixel ( 1100 ) of a first color (C 1 ), and a second subpixel ( 1200 ) of a second color (C 2 ), and the second pixel comprising at least one first subpixel ( 2100 ) of the first color and a second subpixel ( 2200 ) of the second color, the first subpixels on the one hand and the second subpixels on the other hand being in contact. The screen comprises a set of photoelements ( 10 ) comprising a first array of photoelements ( 100 ) emitting the first color and a second array of photoelements ( 200 ) emitting the second color. The first subpixels and the second subpixels are formed by the first array and the second array of photoelements, respectively.

A method for selectively filling, with a filling liquid, a first cavity from among a plurality of cavities, each cavity opening out at a front face of a substrate. The method includes a processing step for altering the surface energy of the first internal surface of the first cavity or the surface energy of the second internal surfaces of the other cavities, such that the first surface has a first surface energy and the second surfaces have a second surface energy, and a step including a sequence for spreading the filling liquid, the first energy and the second energy being adjusted such that the first and the second surfaces exert an attracting effect and a repelling effect, respectively, on the liquid.

A pixel including: a light emitting element and a first transistor coupled in series between a reference node and a supply node; and a first circuit including a first terminal coupled to the control terminal of the first transistor, a second terminal coupled to the reference node, the first circuit being configured to generate a control voltage on the first terminal, the first circuit including a variable voltage divider configured to provide the control voltage on the first terminal; and a first switch coupled between the first terminal of the first circuit and a conductive terminal of the first transistor.

A method for manufacturing an optoelectronic device including forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and including a top, and forming by remote plasma chemical vapor deposition, RPCVD, or by molecular-beam epitaxy, MBE, or by hydride vapor phase epitaxy, HVPE, for each semiconductor element, an active area only on said top including at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.

A pixel including: a light emitting element; a memory including at least one non-volatile memory cell; a first switch including a first output terminal coupled to the light emitting element, a second output terminal coupled to the non-volatile memory and an input terminal coupled to a supply node by a transistor; and a control circuit configured to generate a control voltage on a control terminal of the transistor, the control voltage being equal to: a first voltage during a step of resetting at least one cell of the memory; a second voltage during a step of setting at least one cell of the memory; a third voltage during a step of driving the element.

An optoelectronic device including an optoelectronic circuit including light-emitting diodes, thin-film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes, and the transistors stack further including conductive elements, between and through the insulating layers, the conductive elements connecting at least some of the transistors to the light-emitting diodes The device further includes a support having a surface, the support being flexible and/or the surface being curved and non-planar, the optoelectronic circuit being connected to the surface on the side of the thin-film transistors.

An optoelectronic device including a matrix of axial light-emitting diodes (LEDs). Each LED includes an active layer emitting electromagnetic radiation. The matrix forms a photonic crystal having at least first and second resonant peaks in a plane containing the active layers, each first and second peak amplifying the radiation intensity at a first and second wavelength respectively. Each light emitting diode includes an elongated semiconductor element, having a first portion of a first average diameter, a second portion extending the first portion and having a cross-sectional area decreasing away from the first portion, and the active layer extending the second portion and having a second average diameter strictly less than the first average diameter, the active layers being located at the first peak locations and absent at the secondary peak locations.