Aledia

An optoelectronic device includes, in a stack, an emitting layer having optically active structures, configured to emit or receive radiation, a sensitive layer having at least one structure having a temperature resistance below a temperature Tmax below 200° C., a bond layer, and a transparent support layer. The bond layer is based on an inorganic low temperature bonding material. The bond layer also has cavities directly in line with the optically active structures, between the transparent support layer and the sensitive layer.

An optoelectronic device including a first LED forming a first active structure and including first nanowires having first diameters φ1 such that 0.9·φ10<φ1<1,1·φ10 with φ10 a target value of the first diameters, the first nanowires being arranged according to at least one first array with a step p1, said first LED being configured to emit a first light beam having mainly a first wavelength λ1, and a first transition area bordering at least partially the first LED, the first transition area including a plurality of first transition nanowires, the device being characterised in that the first transition nanowires have first transition diameters and/or a first transition array step varying progressively when moving away from the first LED.

An optoelectronic device includes, in a stack, an emitting layer having optically active structures, configured to emit or receive radiation, a sensitive layer having at least one structure having a temperature resistance below a temperature Tmax below 200° C., a bond layer, and a transparent support layer. The bond layer is based on an inorganic low temperature bonding material. The bond layer also has cavities directly in line with the optically active structures, between the transparent support layer and the sensitive layer.

A method of manufacturing an optoelectronic device including assemblies of light-emitting diodes (LED) having first and second assemblies and first blocks made of a first photoluminescent material, each covering one of the first assemblies. The method includes the forming of a layer covering the first and second assemblies, the delimiting of first openings in the layer to expose the first assemblies, the filling of the first openings with the first material, and the performing of a chemical-mechanical polishing to delimit the first blocks.

A light-emitting diode 100 includes a first region 1 , for example of the P type, formed in a first layer 10 and forming, in a direction normal to a basal plane, a stack with a second region 2 having at least one quantum well formed in a second layer 20 , and including a third region 3 , for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions 1, 2 , through the first and second layers 10, 20 . A process for producing a light-emitting diode 100 in which the third region 3 is formed by implantation into and through the first and second layers 10, 20.

A light emitting diode (LED) having an active region and a three-dimensional (3D) structure. The 3D LED includes a first GaN-based layer having a first content of Aluminium and a first content of Indium, and a second GaN-based layer interposed between and in contact with the first layer and the active region, having a second content of Aluminium and a second content of Indium, the second content of indium being strictly higher than the first content of indium so as to promote the formation of misfit dislocations at an interface between the first and second layers. Advantageously, the active region and the first and second layers extend along semi-polar crystallographic planes. Also described is a method for manufacturing such a 3D LED.

An optoelectronic device including a first LED forming a first active structure and including first nanowires having first diameters φ1 such that 0.9·φ10<φ1<1.1·φ10 with φ10 a target value of the first diameters, the first nanowires being arranged according to at least one first array with a step p 1 , said first LED being configured to emit a first light beam having mainly a first wavelength λ1, and a first transition area bordering at least partially the first LED, the first transition area including a plurality of first transition nanowires, the device being characterised in that the first transition nanowires have first transition diameters and/or a first transition array step varying progressively when moving away from the first LED.

A method for transferring a device from a first substrate to a second substrate by way of a manipulation substrate. The method includes bonding the device to the manipulation substrate by way of an assembly layer at a bonding surface, partially etching the assembly layer so as to conserve a narrow portion interposed between the device and the manipulation substrate, the narrow portion having a cross section strictly smaller than the bonding surface, the method being characterized in that the assembly layer is formed beforehand on the manipulation substrate and exclusively on the manipulation substrate.

A manipulation system intended to manipulate micrometric devices, the manipulation system including a main body internally delimiting a suction chamber, suction nozzles including a suction channel emerging on the one hand towards the suction chamber, and on the other hand at a gripping end intended to be brought into contact with a micrometric device; shutter elements, configured to shut off a suction nozzle so as to prevent the gripping of a micrometric device or to allow a fluid communication between a gripping opening of the gripping end and the suction chamber, so as to allow the gripping of a micrometric device in contact with said gripping end. A manipulation method for manipulating micrometric devices by such a manipulation system.

A transfer structure including a substrate and an optoelectronic device attached to the substrate, the substrate including a base portion having a substrate face, and at least one element projecting from the substrate face, the optoelectronic device having a first face including a central zone and a peripheral zone surrounding the central zone, the transfer structure where the at least one projecting element of the substrate is attached to the peripheral zone of the first face of the optoelectronic device. One or more embodiments also relate to a method for transferring optoelectronic devices, which method is based on the implementation of transfer structures.