AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.

In one example, an electronic device includes a substrate comprising a lower conductor, the lower conductor including a lower conductor lower side, which includes a perimeter. An electronic component is coupled to the substrate. An encapsulant covers a portion of the substrate and the electronic component, wherein the lower conductor lower side is exposed from the encapsulant. The electronic device includes one or more of a groove at the perimeter of the lower conductor lower side and extending inward from the lower conductor lower side with the encapsulant within the groove, or a protrusion in the encapsulant that extends to overlap the perimeter with the protrusion including a lower side that lies within a different horizontal plane than the lower conductor lower side. Other examples and related methods are also disclosed herein.

A semiconductor device having an embedded semiconductor die and substrate-to-substrate interconnects is disclosed and may include a substrate with a top surface and a bottom surface, a semiconductor die bonded to the top surface of the substrate, a first mold material encapsulating the semiconductor die and at least a portion of the top surface of the substrate, and a first conductive bump that is on the top surface of the substrate and is at least partially encapsulated by the first mold material. An extended substrate may be coupled to the substrate utilizing the first conductive bump. A second conductive bump may be formed on the bottom surface of the substrate, and a second mold material may encapsulate at least a portion of the second conductive bump and at least a portion of the bottom surface of the substrate. A third mold material may be formed between the first mold material and the extended substrate.

In one example, an electronic device comprises a substrate having a top side and a bottom side, an electronic component over the top side of the substrate, and an encapsulant over the top side of the substrate. The substrate comprises a dielectric structure comprising a first dielectric layer and a conductive structure in the dielectric structure and comprising a first conductor tier in the first dielectric layer comprising a first trace exposed from a top side of the first dielectric layer and partially extending through the first dielectric layer and a first via exposed from the top side of the first dielectric layer and a bottom side of the first dielectric layer and extending from the top side of the first dielectric layer to the bottom side of the first dielectric layer. The first trace and the first via have non-stepped sidewalls extending vertically. Other examples are also disclosed herein.

In one example, a semiconductor device includes a substrate. The substrate includes a base including a top side and a cavity side opposite to the top side, leads extending from the cavity side, and an encapsulant interposed between the leads. An electronic component is located on the cavity side and spaced apart from the encapsulant. Other examples and related methods are also disclosed herein.

In one example, an electronic device includes a redistribution structure, a first electronic component disposed over the redistribution structure, and a second electronic component disposed adjacent the first electronic component and over the redistribution structure. An encapsulant can be disposed around lateral sides of the first electronic component and the second electronic component. A metallic structure is disposed over the encapsulant and the first electronic component, and a first CTE above a beam-neutral axis of the electronic device is balanced with a second CTE below the beam-neutral axis of the electronic device. Other examples and related methods are also disclosed herein.

In one example, an electronic device includes a module comprising electronic components and a first encapsulant disposed around lateral sides of the electronic components. A substrate is coupled to the module. A metallic structure is coupled to a side of the module opposite the substrate, and the metallic structure is coupled to back sides of the electronic components. A thermal interface material is coupled to the metallic structure. A lid is coupled to the thermal interface material. Other examples and related methods are also disclosed herein.

A packaged electronic device structure includes a first electronic device with a first substrate, a first electronic component coupled to the first substrate, a first encapsulant covering the first electronic component, and first external interconnects coupled to the first substrate. The first external interconnects are coupled to a second substrate, a second electronic component is coupled to the second substrate, and a second encapsulant is interposed between the first substrate and the second substrate and covers the first external interconnects and the second electronic component. A second electronic device includes a third substrate. A third electronic component is coupled to the third substrate. Vertical interconnects couple the second substrate to the third substrate and a third encapsulant is interposed between the second substrate and the third substrate and covers the vertical interconnects and the third electronic component. Second external interconnects are coupled to the third substrate.

In one example, an electronic device comprises a substrate comprising a first side, a second side opposite to the first side, a dielectric structure, and a conductive structure, a first electronic component over the first side of the substrate and coupled to the conductive structure, an encapsulant over the first side of the substrate and covering a lateral side of the first electronic component, wherein the encapsulant has a first side facing away from the substrate, and a cavity in the first side of the encapsulant, a second electronic component over the first electronic component and over the encapsulant, a vertical interconnect in the encapsulant and coupled to the conductive structure, and a connector coupled to the vertical interconnect and the second electronic component, wherein the connector is in the cavity. Other examples and related methods are also disclosed herein.

In one example, a semiconductor device comprises a substrate comprising a conductive structure, an electronic component over a top side of the substrate and electrically coupled with the conductive structure, a lid structure over the substrate and over the electronic component, and a vertical interconnect in the lid structure extending to a top surface of the lid structure and electrically coupled with the conductive structure. Other examples and related methods are also disclosed herein.

In one example, an electronic device comprises a base substrate comprising a base substrate conductive structure, a first electronic component over a first side of the base substrate, an encapsulant over the first side of the base substrate, wherein the encapsulant contacts a lateral side of the electronic component, an interposer substrate over a first side of the encapsulant and comprising an interposer substrate conductive structure, and a vertical interconnect in the encapsulant and coupled with the base substrate conductive structure and the interposer substrate conductive structure. A first one of the base substrate or the interposer substrate comprises a redistribution layer (RDL) substrate, and a second one of the base substrate or the interposer substrate comprises a laminate substrate. Other examples and related methods are also disclosed herein.