ams-OSRAM International GmbH

In an embodiment a method for manufacturing a semiconductor device includes forming a compound semiconductor layer over a growth substrate, the compound semiconductor layer including N, an element E selected from the group consisting of Sc, Y, Nb, and Ta, and at least one group III element selected from the group consisting of Al, In and Ga, after forming, annealing the compound semiconductor layer at a temperature larger than 1000° and less than 1200° C., and after annealing, epitaxially forming a semiconductor body including an In x Al y Ga 1-x-y N layer over the compound semiconductor layer, wherein 0≤x≤1, 0≤y≤1.

A method of electrically contacting at least one electronic includes providing a flexible element including a first main surface on which a first conductor trace and a second conductor are arranged, providing a first wire and a second wire, arranging the flexible element with respect to the at least one component with the first main surface facing the at least one component, bending and pressing the flexible element onto the at least one component such that a first contact element of the at least one component contacts the first and the second conductor trace, contacting a second contact element of the at least one component with the first and second wires, applying a current to the at least one first conductor trace and the first wire, and measuring a voltage drop across the at least one component via the at least one second conductor trace and the second wire.

In an embodiment a component includes a semiconductor body and a cover region, wherein the semiconductor body has a first semiconductor layer, a second semiconductor layer and an active zone arranged therebetween, the active zone configured for generating electromagnetic radiation, wherein the cover region is configured for electrically contacting the first semiconductor layer, and wherein the cover region has a larger lateral cross-section than the active zone and has an edge region, which does not overlap with the active zone in plan view, and vertical depressions, which are located exclusively in the edge region of the cover region and, in plan view, do not overlap with the active zone, the vertical depressions being configured to reduce lateral optical crosstalk.

A method for regulating a supply current of a plurality of first laser diodes of an optoelectronic device during its intended use, including operating the plurality of first laser diodes, which are arranged on a carrier substrate, with the supply current; during operation of the plurality of first laser diodes simultaneously energizing at least one second laser diode, which is identical to the first laser diodes, with a current below a laser threshold of the second laser diode, wherein the at least one second laser diode is thermally coupled to the plurality of first laser diodes via the carrier substrate; determining a voltage (V f ) drop across the at least one second laser diode; and controlling the supply current as a function of the voltage (V f ) drop across the at least one second laser diode.

The present disclosure provides a phosphor having the general molecular formula EA 4 Li 2 D 4-x E x N 8-x O 1-x :M. EA is an element or a combination of elements selected from the group of divalent elements, D is an element or a combination of elements selected from the group of tetravalent elements and E is an element or a combination of elements selected from the group of trivalent elements. Furthermore, M comprises an activator element and 0≤x≤4. A method for producing the phosphor and a radiation-emitting device are also provided.

In an embodiment an electronic device includes a housing body with a cavity in which an electronic semiconductor chip is mounted and a cover element arranged in the cavity and covering the semiconductor chip, wherein the cavity has a side wall, which faces the semiconductor chip, and which surrounds the semiconductor chip in a lateral direction, wherein the cover element is in direct mechanical contact with the side wall in at least one adhesion region and adheres directly to the housing body in the at least one adhesion region, wherein the housing body has at least one anchoring structure configured to reduce a delamination tendency of the cover element from the housing body in the at least one adhesion region, and wherein the anchoring structure comprises a roughening and/or at least one pillar element located on a bottom surface of the cavity.

In an embodiment an optoelectronic lighting device at least one optoelectronic light source configured to generate light, at least one conversion system configured to convert the light into converted light, a thermally conductive substrate, wherein the conversion system is arranged on the substrate for heat dissipation, wherein the light source is also arranged on the substrate above the conversion system or laterally next to the conversion system, and a mirror coating arranged above the light source, wherein the mirror coating is transparent to the converted light and/or reflective to the light, wherein the conversion system includes a polymer matrix material in which a converter material and particles, which are substantially transparent to a wavelength of the converted light, are embedded, and which have a thermal conductivity which is at least 20 times higher than a thermal conductivity of the polymer matrix material.

In an embodiment an optoelectronic semiconductor component includes a semiconductor body having a first semiconductor layer, a first cladding layer, a second semiconductor layer, a second cladding layer, an active region arranged between the first cladding layer and the second cladding layer, and a blocking layer arranged between the second cladding layer and the second semiconductor layer, wherein the active region is configured to emit an electromagnetic radiation in an emission region, wherein the first semiconductor layer has a first conductivity type, wherein the second semiconductor layer has a second conductivity type, wherein the first cladding layer and the second cladding layer are nominally undoped, wherein the blocking layer is formed of a semiconductor material and configured to confine an operating current of the active region to a core region, and wherein the second semiconductor layer extends at least partially through the blocking layer to the second cladding layer in the core region, which is spaced apart from lateral edges of the emission region.

An optoelectronic semiconductor device has a semiconductor layer sequence with an active layer for generating primary radiation, at least one injection structure on a first side of the semiconductor layer sequence for injecting charge carriers into the semiconductor layer sequence, and at least one mirror structure on the first side of the semiconductor layer sequence and adjacent to the injection structure for reflecting radiation generated in the semiconductor device. The mirror structure has a higher reflectance for radiation generated in the semiconductor device than the injection structure.

In an embodiment a method for manufacturing an optoelectronic semiconductor chip includes providing a functional layer stack, wherein the functional layer stack comprises a first layer with a dopant of a first conductivity type, an active region arranged on the first layer, a second layer with a dopant of a second conductivity type arranged on the active region and a residual oxide layer arranged on at least one side surface of the first layer and/or the second layer and/or the active region, placing the functional layer stack in a liquid phase chemical reactor, removing oxygen from the at least one side surface in the liquid phase chemical reactor and growing an oxidatively stable layer on the at least one side surface in the liquid phase chemical reactor.