Filed:2025-12-17Pub:2026-06-18
Applicant:Analog Devices, Inc.
Methods of forming compound semiconductors devices, such as GaN-based high electron mobility transistors (HEMTs) are described. AlScN can be employed for lattice-matching to a GaN layer. A “two-dimensional” (2D) (e.g., graphene, MoS2, HbN, Si, or other) intermediate layer can act as a sacrificial layer, or can be selectively removed such as to leave behind a back-side electric field plate for the GaN HEMT device. Back-barrier layer and “superlattice” formation techniques are described, along with backside processing and layer formation and phase-change compliant layers. Certain steps can involve concurrent chemical vapor deposition (CVD) and physical vapor deposition (PVD), e.g., sputtering, at lower temperature than otherwise possible using Metal organic chemical vapor deposition (MOCVD).