ASM IP Holding B.V.

Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

Disclosed herein is a method, system and apparatus for forming, by a cyclic process, a dopant concentration gradient in a doped hafnium zirconium oxide (HZO) layer on a substrate, the cyclic process includes, providing the substrate in a reaction chamber, a) pulsing a hafnium precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the hafnium precursor(s), b) pulsing a zirconium precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the zirconium precursor(s), c) pulsing an oxygen reactant(s) into the reaction chamber, where at least a part of the substrate is contacted with the oxygen reactant(s), d) pulsing a dopant precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the dopant precursor(s), and e) purging the reaction chamber.

Methods and systems for forming a low-k material layer on a surface of a substrate and structures and devices formed using the method or system are disclosed. Exemplary methods include providing a substrate within a reaction chamber of a reactor system, providing one or more precursors to the reaction chamber, and providing high frequency, high plasma power to polymerize the one or more precursors to form dense low-k material with desired properties.

A method, system and apparatus for depositing a composite film, comprising, supporting a substrate, depositing a first metal electrode via a first non-Atomic Layer Deposition (non-ALD) process, depositing a first metal liner, via a first cyclic ALD process, depositing a dielectric layer comprising a first crystalline structure, via a second cyclic ALD process, wherein the dielectric layer is in physical contact with the first metal liner layer and at least in electrical communication with the first metal electrode, inducing a first in-plane tensile stress in the dielectric layer at a first interface between the first metal liner and the dielectric layer and converting the first crystalline structure to a second crystalline structure, responsive to the first in-plane tensile stress.

The present disclosure generally relates to the field of semiconductor devices. More particularly, it relates to a method for producing an electrode contact layer comprising a metal oxide film and a metal film liner, related devices and systems for producing the same.

Methods for manufacturing metal-insulator-metal (MIM) capacitors are disclosed. The methods include, forming a dielectric layer on at least part of a substrate, the dielectric layer being disposed between a first conductive layer and a second conductive layer, and forming at least one of a first dipole layer or a second dipole layer between the dielectric layer and one or more of the conductive layers. The disclosed first dipole layer and/or the second dipole layer are configured to create an asymmetric charge distribution across the dielectric layer. Systems constructed and arranged for manufacturing MIM capacitors are also disclosed.

The technology of the present disclosure relates to the field of capacitor devices. More particularly, methods for forming semiconductor structures including hafnium zirconium oxide (HZO) layers are disclosed. The methods include manufacturing a semiconductor structure by, providing a substrate, and forming a HZO layer thereon by cyclical deposition processes. Systems for forming hafnium zirconium oxide layers are further disclosed, as well as semiconductor structures including HZO layers.

A method for depositing a Group IV semiconductor is disclosed. The method may include, providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The methods may further include, exposing the substrate to at least one Group IV precursor and exposing the substrate to at least one Group IIIA metalorganic dopant precursor. The methods may further include depositing a Group IV semiconductor on a surface of the substrate. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.

Disclosed are methods and systems for depositing layers comprising a titanium, aluminum, and carbon. The layers are formed onto a surface of a substrate. The deposition process comprises a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

The present disclosure relates to methods and apparatuses for depositing transition metal carbide-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form transition metal carbide-containing material on the substrate. The second precursor comprises a cyclic diene compound comprising a substituent comprising metalloid.