ASML Holding N.V.

An inspection system, a lithography apparatus, and an inspection method are provided. The inspection system includes an illumination system, a detection system, and processing circuitry. The illumination system generates a broadband beam and illuminates surface of an object with the broadband illumination beam. The broadband beam has a continuous spectral range. The detection system receives radiation scattered at the surface and by a structure near the surface. The detection system generates a detection signal based on an optical response to the broadband illumination beam. The processing circuitry analyzes the detection signal. The processing circuitry distinguishes between a spurious signal and a signal corresponding to a defect on the surface based on the analyzing. The spurious signal is diminished for at least a portion of the continuous spectral range.

An inspection system, a lithography apparatus, and an inspection method are provided. The inspection system includes an illumination system, a detection system, and processing circuitry. The illumination system generates a first illumination beam at a first wavelength and a second illumination beam at a second wavelength. The first wavelength is different from the second wavelength. The illumination system irradiates an object simultaneously with the first illumination beam and the second illumination beam. The detection system receives radiation scattered by a particle present at a surface of the object at the first wavelength. The detection system generates a detection signal. The processing circuitry determines a characteristic of the particle based on the detection signal.

A method for source mask optimization or mask only optimization used to image a pattern onto a substrate is described. The method comprises determining a non-uniform illumination intensity profile for illumination from an illumination source; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto the substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination source and the projection optics of a lithographic apparatus. In some embodiments, the projection optics comprise a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may comprise performing optical proximity correction, for example.

A metrology or inspection system, a lithographic apparatus, and a method are provided. The system includes an illumination system, an optical system, a first optical device, a second optical device, a detector, and a processor. The optical system is configured to split an illumination beam into a first sub-beam and a second sub-beam. The first optical device is configured to receive the first sub beam and direct the first sub-beam towards a first spot on a substrate. The substrate includes one or more target structures. The second optical device is configured to receive the second sub-beam and direct the second sub-beam towards a second spot on the substrate. The first spot is a different location than the second spot. The detector is configured to receive diffracted beams and to generate a detection signal. The processor is configured to determine a property of the one or more target structures.

A substrate holder, for a lithographic apparatus, having a main body, a plurality of support elements to support a substrate and a seal unit. The seal unit may include a first seal positioned outward of and surrounding the plurality of support elements. A position of a substrate contact region of an upper surface of the first seal may be arranged at a distance from the plurality of support elements sufficient enough such that during the loading/unloading of the substrate, a force applied to the first seal by the substrate is greater than a force applied to the plurality of support elements by the substrate. A profile of the contact region, in a cross section through the seal, may have a shape which is configured such that during the loading/unloading of the substrate, the substrate contacts the seal via at least two different points of the profile.

Disclosed is a method for a metrology measurement on an area of a substrate comprising at least a portion of a target structure. The method comprises receiving a radiation information representing a portion of radiation scattered by the are, and using a filter in a Fourier domain for removing or suppressing at least a portion of the received radiation information that does not relate to radiation that has been scattered by the target structure for obtaining a filtered radiation information for the metrology measurement, wherein characteristics of the filter are based on target information about the target structure.

An inspection system includes a radiation source that generates a beam of radiation and irradiates a first surface of an object, defining a region of the first surface of the object. The radiation source also irradiates a second surface of the object, defining a region of the second surface, wherein the second surface is at a different depth level within the object than the first surface. The inspection system may also include a detector that defines a field of view (FOV) of the first surface including the region of the first surface, and receives radiation scattered from the region of the first surface and the region of the second surface. The inspection system may also include a processor that discards image data not received from the region of the first surface, and constructs a composite image comprising the image data from across the region of the first surface.

A metrology system includes a radiation source, an adjustable diffractive element, an optical system, an optical element, and a processor. The radiation source generates radiation. The adjustable diffractive element diffracts the radiation to generate first and second beams of radiation. The first and second beams have first and second different non-zero diffraction orders, respectively. The optical system directs the first and second beams toward a target structure such that first and second scattered beams of radiation are generated based on the first and second beams, respectively. The metrology system adjusts a phase difference of the first and second scattered beams. The optical element interferes the first and second scattered beams at an imaging detector that generates a detection signal. The processor receives and analyzes the detection signal to determine a property of the target structure based on the adjusted phase difference.

Systems, apparatuses, methods, and computer program products are provided for determining a free form flatness of a substrate table. An example system can include a substrate table that includes a first substrate table surface and a grounded substrate table electrical connection configured to ground the substrate table. The system can further include a substrate that includes a semiconducting layer, a thermally-grown insulating layer, a first substrate surface disposed on the insulating layer, and a substrate electrical connection configured to transmit a voltage to the semiconducting layer. The system can further include a metrology system configured to apply a voltage to the substrate electrical connection to electrostatically clamp the substrate to the substrate table, measure a flatness of the first substrate surface, and determine a free form flatness of the first substrate table surface based on the measured flatness of the first substrate surface.

An inspection system ( 1600 ), a lithography apparatus, and an inspection method are provided. The inspection system ( 1600 ) includes an illumination system ( 1602 ), a detection system ( 1606 ), and processing circuitry ( 1622 ). The illumination system generates a first illumination beam ( 1610 ) at a first wavelength and a second illumination beam ( 1618 ) at a second wavelength. The first wavelength is different from the second wavelength. The illumination system irradiates an object ( 1612 ) simultaneously with the first illumination beam and the second illumination beam. The detection system receives radiation ( 1620 ) scattered by a particle ( 1624 ) present at a surface ( 1626 ) of the object at the first wavelength. The detection system generates a detection signal. The processing circuitry determines a characteristic of the particle based on the detection signal.