AT&S Austria Technologie & Systemtechnik AG

A component carrier including a stack having at least one electrically conductive layer structure and at least one electrically insulating layer structure; a first component embedded in the stack; a second component mounted on the first component and in a cavity which is delimited by an interface surface of the stack; and an electrically insulating filling which at least partially fills the cavity and extends up to the interface surface and thereby forms an interface with at least one of the at least one electrically insulating layer structure.

A component carrier includes a stack with at least one electrically insulating layer structure and electrically conductive layer structures some of which have a first density of trace structures and a second density of connection structures, and a further stack with at least one further electrically insulating layer structure and further electrically conductive layer structures some of which have a third density of further trace structures and a fourth density of further connection structures. A first component is applied to the stack and a second component is embedded in the further stack. The connection structures are respectively connected to the further connection structures. The first density of trace structures is lower than the third density of further trace structures. The stack and the further stack are connected with each other by the connection structures and by the further connection structures. The first component is connected to the second component.

A component carrier includes a first stack with an electrically insulating layer structure and an electrically conductive layer structure with a first density of trace structures and a second density of first connection structures, a second stack with a second electrically insulating layer structure and a second electrically conductive layer structure with a third density of second trace structures and a fourth density of second connection structures. A first component is applied to the first stack and a second component is embedded in the second stack. The first connection structures are respectively connected to the second connection structures. The first density of first trace structures is lower than the third density of second trace structures. The first stack and the second stack are connected with each other by the first connection structures and by the second connection structures. The first component is connected to the second component.

A component carrier may include a stack comprising a plurality of stacked layers, the stacked layers comprising at least one electrically conductive layer structure and at least one electrically insulating layer structure; a plurality of equally designed electronic units formed in the stack, each electronic unit comprising at least one semiconductor element embedded into the stack, wherein each semiconductor element is made of a semiconductor material; wherein at least a plurality of said electronic units are arranged to form at least one active area, which is surrounded by a frame area without functional components; and a plurality of dummy components embedded into the stack in the frame area; wherein the at least a plurality of said electronic units is arranged in the at least one active area in a pattern comprising more than 2 rows and more than 2 columns.

A component carrier with a first component carrier structure including a first stack which has at least one first electrically conductive layer structure and at least one first electrically insulating layer structure is disclosed. The at least one first electrically conductive layer structure has a first contact element which extends up to a first contact surface of the first stack. An electrically conductive connection medium is directly connected to the first contact element at the first contact surface by filling at least one recess of the first contact element. The at least one recess having a larger dimensioned cavity delimited by a smaller dimensioned surface profile.

A component carrier includes a stack with at least one electrically insulating layer structure and/or at least one electrically conductive layer structure and a through hole. An interposer is located in the through hole and has a higher density of connection elements than the stack. A first component is mounted on a first main surface of the interposer and a second component is mounted on a second main surface of the interposer. The first component and the second component are connected via the interposer.

A component carrier, including a stack having at least one electrically conductive layer structure and at least one electrically insulating layer structure, a cavity in the stack, an inlay substrate at least partially embedded in the cavity. The inlay substrate includes a component and an IC substrate stacked one above the other, a first redistribution structure that electrically connects the component to a first component carrier main surface, and a second redistribution structure that electrically connects the IC substrate to a second component carrier main surface opposed to the first component carrier main surface.

A connection arrangement for forming a component carrier structure is disclosed. The connection arrangement includes a first electrically conductive connection element and a second electrically conductive connection element. The first connection element and the second connection element are configured such that, upon connecting the first connection element with the second connection element along a connection direction, a form fit is established between the first connection element and the second connection element that limits a relative motion between the first connection element and the second connection element in a plane perpendicular to the connection direction. A component carrier and a method of forming a component carrier structure are also disclosed.