BENEQ OY

A transparent thin film electroluminescent display device includes a first transparent thin film electroluminescent display having a substrate and a first active layer capable of emitting a spectrum of light in a wavelength of visible light. The transparent thin film electroluminescent display device further includes a second transparent thin film electroluminescent display having a substrate and a second active layer, the first and second transparent thin film electroluminescent displays being arranged in a superposed manner such that the first and second active layers are spaced apart from each other for forming the transparent thin film electroluminescent display device with a superposed structure.

A nozzle head and apparatus for subjecting a surface of a substrate to alternate surface reactions of at least two precursors (A, B) includes an output face, at least one gas supply nozzle, and at least one discharge nozzle. The nozzle head includes on the output face in the following order: a first zone end nozzle, a gas supply nozzle and a second zone end nozzle, repeated one or more times. The first zone end nozzle is arranged at a first distance (L Y ) from the gas supply nozzle and the second zone end nozzle is arranged at a second distance (L X ) from the gas supply nozzle. The second distance (L X ) is greater than the first distance (L Y ).

The invention relates to a method for fabricating a plasma etch-resistant film ( 1 ) on a surface of a substrate ( 2 ), wherein the method comprises the step of forming a film comprising an intermediate layer ( 4 ) of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or any mixture thereof on a first layer ( 3 ) of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.

A material comprising a first layer of matrix material doped with a dopant metal is disclosed. The matrix material comprises a rare-earth metal, oxygen, and one or both of sulfur and selenium. In the first layer of matrix material doped with the dopant metal, the rare-earth metal has an oxidation state of +3 and the dopant metal has an oxidation state of +2. Further is disclosed a method for fabricating the material and a device comprising the material.

The invention relates to a method for fabricating a plasma etch-resistant film ( 1 ) on a surface of a substrate ( 2 ), wherein the method comprises the step of forming a film comprising an intermediate layer ( 4 ) of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or anymixture thereof on a first layer ( 3 ) of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.

A nozzle head and an apparatus for subjecting a surface of a substrate to successive surface reactions of at least two precursors according to the principles of atomic layer deposition, the nozzle head includes a nozzle head body, a nozzle head output face and gas channels for transporting gas. The nozzle head further includes a first through hole through at least two of the two or more nozzles and a first tube having a tube wall and being fitted into the first through hole, said first tube including gas conduits provided in the tube wall for providing a fluid communication between the first tube and the gas channels in connection with the two or more nozzles.