Bridgelux, Inc.

A white light emitting device comprises: an LED that generates excitation light of wavelength from 420 nm to 480 nm; and photoluminescence materials that generate light with a peak emission wavelength from 500 nm to 650 nm comprising a broadband phosphor, and a manganese-activated narrowband red fluoride phosphor with a peak emission wavelength from 628 nm to 640 nm and a full width at half maximum of less than 30 nm. The device generates white light with a selected color temperature from 2200K to 6500K, a General Color Rendering Index, CRI Ra, of at least 80, and a Duv (Delta u, v) from 0.0060 to 0.0170 for the selected color temperature and wherein the device has an LER (Luminous Efficacy of Radiation) of at least 320 lm/W opt .

A light emitting device comprising: a substrate; a plurality of LED chips on a front face of the substrate; a photoluminescence material layer comprising broadband green to red photoluminescence material that is in contact with and covers each of the plurality of LED chips; and a light scattering layer comprising particles of light scattering material that is in contact with and covers the photoluminescence material layer; wherein there is no photoluminescence material layer on a back face of the substrate; and wherein, when the device is in an off-state, the color of the light scattering layer resembles the color of the light scattering material.

A light emitting device comprising: an LED for generating blue light; a green phosphor for generating green light; and a manganese activated fluoride narrowband phosphor for generating red light; wherein a ratio of a maximum intensity in the red region of the spectrum to a minimum intensity in the yellow to orange region of the spectrum is from about 5.0 to about 15.0.

An LED-filament comprising: a substrate; a plurality of LED chips on a front face of the substrate; a photoluminescence material layer comprising at least one broadband green to red photoluminescence material that is in contact with and covers each of the plurality of LED chips; and a light scattering layer comprising particles of a light scattering material that is in contact with and covers the photoluminescence material layer and covers at least a part of a back face of the substrate; wherein, when the LED-filament is in an off-state, the color of the light scattering layer resembles the color of the light scattering material.

Flip chip LEDs comprise a transparent carrier and an active material layer such as AlInGaP bonded to the carrier and that emits light between about 550 to 650 nm. The flip chip LED has a first electrical terminal in contact with a first region of the active material layer, and a second electrical terminal in contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer. Chip-on-board LED packages comprise a plurality of the flip chip LEDs with respective first and second electrical terminals interconnected with one another. The package may include Flip chip LEDs that emit light between 420 to 500 nm, and the flip chip LEDs are covered with a phosphorus material comprising a yellow constituent, and may comprise a transparent material disposed over the phosphorus material.

A light emitting device comprising: at least one first LED for generating red light; at least one second LED for generating green light; at least one third LED for generating blue light; at least one fourth LED for generating light of a CCT in a range from 1800K to 5000K; and first package and a second package that in combination comprise the at least one first LED, the at least one second LED, the at least one third LED, and the at least one fourth LED, and wherein the at least one first LED comprises a phosphor-converted LED comprising a narrowband red phosphor with a FWHM less than 55 nm.

A light emitting device comprising: a first LED for generating light of a first chromaticity in a first chromaticity region; a second LED for generating light of a second chromaticity in a second chromaticity region; and a third LED for generating light of a third chromaticity in a third chromaticity region, wherein the device is for generating light with a CCT that is tunable within a range of CCTs from 1800K to 6500K and has a chromaticity that is within 5 SDCM of the black body locus; wherein the device has a luminous efficacy of at least 95 lm/W; and wherein the light generated by the device comprises a combination of light generated by the first, second, and third LEDs and wherein the CCT is tunable by controlling power to the first, second and third LEDs.

Various aspects of a light emitting apparatus includes a substrate. Various aspects of the light emitting apparatus include a light emitting die arranged on the substrate. The light emitting die includes one or more side walls. Various aspects of the light emitting apparatus include a reflective die attach material extending along the one or more side walls of the light emitting die.

A light emitting device comprising a Phosphor-Converted LED for generating red light: wherein the Phosphor-Converted LED comprises: a blue LED; and a narrowband red fluoride phosphor.

Various aspects of a light emitting apparatus includes a substrate. Various aspects of the light emitting apparatus include a light emitting die arranged on the substrate. The light emitting die includes one or more side walls. Various aspects of the light emitting apparatus include a reflective die attach material extending along the one or more side walls of the light emitting die.