Bruker Nano, Inc.

An imaging spectroscopic ellipsometry apparatus and method configured to measure thin films with high spatial resolution. The apparatus includes a rotating compensator that enables to simultaneously collect both spectrometric ellipsometric data and ellipsometric imaging with the use of the same measurement beam of light. Collecting both data sets simultaneously increases the information content for analysis and affords a substantial increase in measurement performance.

Systems and methods configured for simultaneous imaging and stimulation using a microscope system. The microscope system can have a relatively small size compared to an average microscope system. The microscope can comprise in part an imaging light source and a stimulation light source. Light from the imaging light source and the stimulation light source can be spectrally separated to reduce cross talk between the stimulation light and the imaging light.

Disclosed herein are compositions, systems, kits, and methods for photobleaching, and selective photobleaching, a biological sample.

A debris collection and metrology system for collecting and analyzing debris from a tip used in nanomachining processes, the system including an irradiation source, an irradiation detector, an actuator, and a controller. The irradiation source is operable to direct incident irradiation onto the tip, and the irradiation detector is operable to receive a sample irradiation from the tip, the sample irradiation being generated as a result of the direct incident irradiation being applied onto the tip. The controller is operatively coupled to an actuator system and the irradiation detector, and the controller is operable to receive a first signal based on a first response of the irradiation detector to the sample irradiation, and the controller is operable to effect relative motion between the tip and at least one of the irradiation source and the irradiation detector based on the first signal.

Shortcomings associated with insufficient control of a conventional CMP-process are obviated by providing an CMP-apparatus configured to complement a constant force (to which a workpiece that is being polished is conventionally exposed) with a time-alternating force and/or means for measuring an electrical characteristic of the CMP-process. The time-alternating force is applied with the use of a system component that is electrically isolated from the workpiece and that is disposed in the carrier-chick in which the workpiece is affixed for CMP-process, while the electrical characteristic is measured with the use of a judiciously-configured reservoir in which the used fluid is collected. The use of such CMP-apparatus.

Shortcomings associated with insufficient control of a conventional CMP-process are obviated by providing an CMP-apparatus configured to complement a constant force (to which a workpiece that is being polished is conventionally exposed) with a time-alternating force and/or means for measuring an electrical characteristic of the CMP-process. The time-alternating force is applied with the use of a system component that is electrically isolated from the workpiece and that is disposed in the carrier-chick in which the workpiece is affixed for CMP-process, while the electrical characteristic is measured with the use of a judiciously-configured reservoir in which the used fluid is collected. The use of such CMP-apparatus.

A probe assembly for a surface analysis instrument such as an atomic force microscope (AFM), and a corresponding method of fabrication, the probe assembly including a substrate defining a probe body of the probe assembly, and a cantilever of the probe assembly extending from the probe body and having a proximal end and a free distal end. A reflective metal layer is disposed on the cantilever to reflect electromagnetic energy/light from a source (e.g., laser) of a deflection detection apparatus, and is a chemically non-inert metal. A passivating layer is disposed on the reflective layer to preserve the reflective layer when operating the surface analysis instrument to measure a sample in a reactive fluid. The passivating layer is deposited using pinhole free atomic layer deposition (ALD), and is at least one of silicon oxide (SiO2) and silicon nitride (Si3N4).

A probe assembly for a surface analysis instrument such as an atomic force microscope (AFM), and a corresponding method of operation, that dissipates heat in response to photothermally driving the probe. The heat dissipating probe assemblies include a substrate defining a probe body of the probe assembly, a cantilever of the probe assembly extending from the probe body and having a free end, and wherein at least a portion of the cantilever operates as a heat sink when the probe assembly is actuated with a photothermal laser. The cantilever can be a single diving board type cantilever having a width twice that of the photothermal laser spot, or include one or more heat sink arms. A corresponding method of wafer level batch fabrication is also provided.

An apparatus and method directed to sample characterization with an AFM using a pulsed IR laser in force volume mode, i.e., force volume mode combined with AFM-IR, referred to herein as FV AFM-IR. In this way, lateral forces are suppressed during probe positioning, and precise force control allows adjusting the tip-sample interaction force, including keeping the tip-sample interaction force constant or exerting pulling forces. Nano-spectroscopic measurements with sub-20 nm, and even sub-10 nm resolution can be acquired together with nano-mechanical and other property measurements. Notably, probe resonance shifts can be compensated with frequency tracking methods, and signal normalization by the Q-factor can be used to ensure that the extracted light-induced surface pulse force is substantially independent of damping.

A method and apparatus of operating an atomic force microscope (AFM) to measure a sample including using steady state AFM control and torsional oscillation (for example, torsional resonance (TR) Mode) excitation to select a torsional oscillation frequency or torsional oscillation frequency band for subsequent operation of the AFM in a force mapping/transient mode. The transient AFM mode may be one of PeakForce Tapping Mode, QI Mode and Force Volume Mode. In each cycle of probe-sample interaction in transient control mode there is a probe-sample free interaction interval and a probe-sample close proximity interval. TR Mode sensing using gated TR excitation during the close proximity interval of different regions of the probe-sample interaction is employed to improve resolution, for example, to differentiate atoms in graphite samples.