Company patents
DB HITEK CO., LTD.
DB HiTek Co., Ltd. shows a surprising shift in its patent strategy, with a significant decline in its historically strong "Transistor & Device Structure" category, which saw a -100.0% YoY drop in 2026 after a -92.3% decline in 2025. While "Semiconductor Diodes & Transistors" remains its largest category at 34.1% of its portfolio, the company appears to be de-emphasizing core semiconductor design, as evidenced by the -86.7% YoY decline in "Semiconductor Manufacturing Process" patents in 2026 after an 87.5% growth in 2025, and the complete absence of new patents in "Integrated Circuit Layout & Arrangement" since 2024, suggesting a potential re-evaluation of its long-term R&D focus within the semiconductor sector.
Patent Trend by Technology Area
Yearly patent publications since 2023
Product themes
Product-level themes inferred from filings since 2023, with category chips showing where each theme appears. Select a theme to filter the patents below.
170 US filings (since 2023) · 8 categories · 22 themes
Advanced techniques for forming and optimizing gate dielectrics, work function layers, and other dielectric layers within transistor structures to improve performance, reliability, and scaling.
Novel materials and processes for forming low-resistance electrical contacts and interconnects within semiconductor devices, including selective deposition, silicidation, and barrier layers for improved performance and scaling.
Techniques and methodologies for fabricating semiconductor devices, including etching, deposition, annealing, isolation, and doping steps, aimed at improving yield, performance, or enabling new structures.
Development and manufacturing of semiconductor devices using wide bandgap materials like Silicon Carbide (SiC) or Gallium Nitride (GaN) for high-power, high-frequency, or high-temperature applications.
Focuses on advanced pixel architectures, often involving vertical stacking (3D) or silicon-on-insulator (SOI) structures, to improve performance, density, or functionality of photodiodes, transistors, and floating diffusion regions within image sensor pixels.
Techniques for stacking multiple semiconductor dies or active layers vertically to achieve higher density and shorter interconnections, often utilizing through-silicon vias (TSVs) or other vertical conductive paths like through-hole electrodes.
Structural innovations in individual transistors, such as fin-based field-effect transistors (FinFETs), 3D gate structures, or multi-layer active regions, aimed at improving performance or density.
Layout, material composition, and structural arrangement of photoelectric conversion elements and associated circuitry within image sensor arrays, including infrared detectors and back-side illuminated structures.
Image sensors tailored for specific advanced functionalities beyond basic image capture, such as high dynamic range (HDR) imaging, single-photon detection, auto-focus, or distance measurement (LiDAR), often incorporating specialized pixel designs or processing.
Focuses on the design and manufacturing of transistors where the gate material fully encircles the channel, often using nanosheets or fins, to improve electrostatic control and reduce short-channel effects.
Design and manufacturing techniques for microelectromechanical systems (MEMS) microphones, focusing on physical components like diaphragms, movable masses, and housing for improved performance, heat management, or fluid interaction.
Engineering solutions for optimizing the acoustic performance and mechanical stability of loudspeakers, including diaphragm materials, spider geometries, vibration suppression, and integration into other devices.
Manufacturing processes and structural designs for transistors utilizing fin-shaped channels or multiple gates (e.g., FinFETs, Gate-All-Around FETs) to enhance gate control and reduce short-channel effects.
Design and operation of transistors optimized for memory applications, including floating body devices, ferroelectric FETs (FeFETs), vertical TFTs for 3D arrays, and charge-trapping memory cells.
Focuses on novel semiconductor materials, heterostructures, and doping profiles to improve photovoltaic conversion efficiency, stability, and spectral response.
Incorporation of novel semiconductor, dielectric, or metallic materials into transistor structures to achieve enhanced performance, new functionalities, or specific device characteristics.
The design and manufacturing of integrated circuits that combine optical and electronic components, particularly for high-speed data communication between processors and memory.
Signal processing techniques for multi-microphone systems to enhance desired audio signals and suppress noise or interference by spatially filtering sound sources, improving signal-to-noise ratio and channel separation.
Methods for depositing thin films with controlled conformality, thickness, and material properties, including selective deposition on specific areas, often using atomic layer deposition (ALD), chemical vapor deposition (CVD), or epitaxial growth.
Techniques for forming electrical contacts, vias, and interconnects to semiconductor devices, including advanced methods like contact-over-active-gate (COAG) and backside contacts for improved density and performance.
Physical layout and material composition of individual pixels within a display panel, including active layers, electrodes, light-emitting elements (LEDs, OLEDs), and associated thin-film transistors (TFTs).
Integrated circuits or sub-circuits designed to regulate, balance, or protect power delivery within a device, often involving specific transistor and capacitor arrangements.
Patents
Showing 1-10 of 44
3D Image Sensor Pixel Design