Guangzhou Tyrafos Semiconductor Technologies Co., Ltd.

The present invention relates to an image sensing structure, including: a sensing circuit, a storage circuit and a processing circuit. The sensing circuit is used to generate multiple sensing signals in different periods; the storage circuit is used to store the sensing signals. The storage circuit sequentially outputs a first sensing signal of a target object in a first period and a second sensing signal of the target object in a second period to the processing circuit. The processing circuit performs dynamic event detection processing through the first sensing signal and the second sensing signal. Also, the present invention relates to an image sensing device including the image sensing structure.

Disclosed are an image sensor circuit and an image sensor device including the image sensor circuit device. The image sensor circuit includes a pixel array formed by a plurality of pixel circuits. Each pixel circuit includes a first sub-pixel circuit, a first control circuit, a second sub-pixel circuit and a second control circuit. The first control circuit may sense light in a first wavelength range and control the first sub-pixel circuit to output a first output information at a first frame rate. The second control circuit may sense light in a second wavelength range and control the second sub-pixel circuit to output a second output information at a second frame rate. The first frame rate is higher than the second frame rate, and the first wavelength range does not overlap with the second wavelength range.

An image sensor and an operation method thereof are provided. The image sensor includes a pixel circuit and a column readout circuit. The pixel circuit includes a pixel unit, a transfer transistor, a reset transistor, a readout transistor and a selection transistor. The column readout circuit includes a first circuit node and a second circuit node. A first terminal of the first reset transistor and a first terminal of the first readout transistor are coupled to a first circuit node, and a second terminal of the first select transistor is coupled to a second circuit node.

An image sensor and an operation method thereof are provided. The image sensor includes a first pixel circuit and a ramp signal generator. The first pixel circuit includes a first pixel unit; a first transfer transistor coupled to the first pixel unit and a first floating diffusion node; a first readout transistor coupled to the first floating diffusion node; a first ramp capacitor coupled to the first floating diffusion node and receiving a first ramp signal; and a first reset transistor coupled to the first floating diffusion node and receiving a reset signal. The ramp signal generator is coupled to the first ramp capacitor and configured to provide the first ramp signal. A voltage range or a counting result of the pixel circuit during at least one of a reset period and a readout period has an offset.

An image sensor and an image sensing method are provided. The image sensor includes a first pixel circuit, a second pixel circuit, a ramp signal generating circuit, a comparator, and a signal processing circuit. The first pixel circuit has a first floating diffusion node. The second pixel circuit has a second floating diffusion node. The ramp signal generating circuit respectively provides a first ramp signal and a second ramp signal to the first floating diffusion node and the second floating diffusion node during a dark sun detection period. The comparator receives a first node voltage of the first floating diffusion node and a second node voltage of the second floating diffusion node. The signal processing circuit determines whether to output an output signal and determines whether to overwrite a digital value corresponding to a sensing signal according to whether the comparator is triggered.

Provided is an image sensor circuit, including a pixel array and a plurality of different control circuits. The pixel array comprises a plurality of pixel circuit groups arranged in an array. Each pixel circuit group comprises a plurality of pixel circuits that generate corresponding sensitivity values over exposure duration. The pixel circuits include a first quantity of first pixel circuits, and a second quantity of second pixel circuits. The plurality of different control circuits are respectively coupled to different pixel circuits to control the exposure duration thereof with different transmission signals. The different control circuits are also set to control different pixel circuits to output photo-sensed values at different frame rates. The image sensor circuit periodically generates the pixel value of each pixel circuit group according to first and second exposure durations, first and second frame rates, and first and second light sensitivity values of each pixel circuit group.

Disclosed are an image sensor and an image sensing method. The image sensor includes a first pixel circuit. The first pixel circuit includes a first driving transistor, a first selection transistor, a first transfer transistor, a first reset transistor and a first sensing unit. A control terminal of the first selection transistor is used for receiving a first selection signal. A control terminal of the first transmitting transistor is used for receiving a first transmitting signal. The image sensing method includes the following steps: receiving a first reset signal during a reset period through a control terminal of the first reset transistor; and receiving a first ramp signal during a sensing period through a control terminal of the first reset transistor.

An image sensor and an operating method thereof are provided. The image sensor includes a first pixel circuit, a first column readout circuit, and a second column readout circuit. The first pixel circuit includes a first pixel unit, a first transfer transistor, a first reset transistor, a first readout transistor, and a first capacitor. The first column readout circuit includes a first circuit node. The second column readout circuit includes a bias transistor. A first terminal of the first reset transistor and a first terminal of the first readout transistor are coupled to the first circuit node, and a second terminal of the first readout transistor is coupled to the bias transistor.

An image sensor, a level shifter circuit, and an operation method thereof are provided. The image sensor includes a pixel circuit and a pixel driving circuit. The pixel driving circuit includes first, second, third, fourth, fifth, and sixth transistors. A first terminal of the first transistor is coupled to a first voltage. A first terminal of the second transistor is coupled to the first voltage, and a control terminal of the second transistor is coupled to a control terminal of the first transistor and a second terminal of the first transistor. A first terminal of the third transistor is coupled to the second terminal of the first transistor, and a second terminal of the third transistor is coupled to a ground voltage. A first terminal of the fourth transistor is coupled to a second terminal of the second transistor and an output terminal.

The present invention provides an image sensing device and an image sensing method. The image sensing device comprises an image sensing array and an image processing circuit. The image sensing array obtains a first frame for a test object, and the first frame comprises a plurality of first pixel values. The image processing circuit analyzes the first frame, and generate an overexposure area for the first pixel values greater than a first threshold in the first frame. Then, the image sensor array obtains a second frame for the overexposure area, and the second frame comprises a plurality of second pixel values. The image processing circuit performs a detection processing on all the first pixel values in the first frame, which retains the first pixel values outside of the overexposure area in the first frame, and replaces the first pixel values in the overexposure area with the second pixel values.