HENGDIAN GROUP DMEGC MAGNETICS CO., LTD

A solar cell and a method for preparation the solar cell are provided. The solar cell includes a semiconductor substrate, a hole transport layer and an electronic transport layer, a first passivation layer and a second passivation layer. The semiconductor substrate includes a first surface and a second surface opposite to each other. The hole transport layer and the electronic transport layer are disposed on the first surface at interval. A material of the hole transport layer includes vanadium oxide, and a material of the electronic transport layer includes titanium oxide. The first passivation layer is located on a surface of the hole transport layer away from the semiconductor substrate. A surface of the first passivation layer away from the semiconductor substrate, a surface of the electronic transport layer away from the semiconductor substrate, and the first surface are all covered by the second passivation layer.

An IBC cell and a preparation method therefor includes: (1) subjecting a raw silicon wafer to a texturing treatment, coating a protective layer, and subjecting the protective layer to an etching modification treatment; (2) subjecting the modified silicon wafer to a polishing treatment, and subjecting the polished silicon wafer to LPCVD for growing a TOPCon cell structure, and then performing laser ablation; and (3) cleaning a polycrystalline silicon layer and the protective layer of the silicon wafer after the laser ablation, preparing a passivation layer, and then performing metallization to obtain the IBC cell. A protective layer is provided in the preparation process of the IBC cell, simultaneously meeting the needs of the front textured surface and the back polished surface.

A P-type back contact cell, a preparation method therefor, and a photovoltaic module. The preparation method for the P-type back contact cell includes preparing a process wafer of the P-type back contact cell. An impurity-absorbing structure is formed on a first and/or second surface side. The impurity-absorbing structure includes a second tunnel layer, a second polycrystalline silicon layer, and a second phosphosilicate glass layer which are stacked. The process wafer is etched having the impurity-absorbing structure formed to remove the impurity-absorbing structure and the first phosphosilicate glass layer on the second surface side. A passivation layer is formed on the first and second surface sides of the process wafer. by forming an impurity-absorbing structure on the process wafer of the P-type back contact cell, the impurities are absorbed. Recombination centers formed by impurities are reduced. Carrier transfer efficiency is improved. Conversion efficiency of the P-type back contact cell is improved.

The present application discloses an iron-silicon magnetic powder core, a preparation method therefor, and an inductor. The preparation method comprises the following steps: (1) mixing iron-silicon alloy magnetic powder and a surface treating agent to obtain a surface-treated magnetic powder; (2) mixing a passivator, a solvent and the surface-treated magnetic powder of step (1) to obtain a passivated magnetic powder; (3) carrying out organic insulation bonding on the passivated magnetic powder of step (2) to obtain a bonded magnetic powder; (4) mixing a release agent and the bonded magnetic powder of step (3) to obtain mixed magnetic powder material; and (5) carrying out compression molding and annealing treatment on the mixed magnetic powder material obtained in step (4) to obtain the iron-silicon magnetic powder core. The iron-silicon magnetic powder core obtained by means of the preparation method provided by the present application has improved insulation and reduced eddy current loss. The invention ameliorates the problem of rapid temperature increases as well as the problem of increased magnetic powder core wear and tear caused by said temperature increases.

Soft magnetic powder, a preparation method therefor, and a use thereof. The preparation method comprises: (1) respectively independently performing surface silane coupling and silicon nitriding treatment on first magnetic powder, second magnetic powder, and third magnetic powder to obtain first magnetic powder, second magnetic powder, and third magnetic powder of which the surfaces are coated with compound films of —Si—N— chemical bonds; and (2) mixing the first magnetic powder, the second magnetic powder, and the third magnetic powder of which the surfaces are coated with the compound films of the —Si—N— chemical bonds, so as to obtain the soft magnetic powder.

Disclosed in the present application is a preparation method for an iron-nickel magnetic powder core material. The preparation method comprises the following steps: (1) mixing iron-nickel powder and an organic coating agent to perform primary coating treatment, and then successively performing drying and annealing to obtain primary passivated iron-nickel powder; and (2) mixing the primary passivated iron-nickel powder obtained in step (1) and an aqueous solution of an inorganic coating agent to perform secondary coating treatment, and then drying same to obtain secondary passivated iron-nickel powder; and (3) mixing the secondary passivated iron-nickel powder obtained in step (2) and a binder, and then successively performing granulation, baking and pressing to obtain an iron-nickel magnetic powder core material. The preparation method provided by the present application can achieve an excellent coating effect on the surfaces of iron-nickel powder and achieve a stable coating layer structure, and can effectively reduce the introduction of carbon, thus further improving the inductance and saturation characteristics of the iron-nickel magnetic powder core material.

Provided in the present application are a nickel-zinc ferrite material, and a preparation method therefor and the use thereof. The nickel-zinc ferrite material comprises a main material, a functional additive and a correcting agent, wherein the main material comprises Fe 2 O 3 , Ni 2 O 3 , ZnO and CuO; the functional additive comprises a combination of any three or at least four of Mn 3 O 4 , TiO 2 , Ta 2 O 5 , Co 2 O 3 or Sm 2 O 3 ; and the correcting agent comprises Fe 2 O 3 and Ni 2 O 3 . In the present invention, an appropriate main formula correction process is used, and a suitable and inexpensive correcting agent and a functional additive are added to a ferrite material, such that the power loss of the prepared nickel-zinc ferrite material at 13.56 MHz can be significantly reduced.

A manganese-zinc ferrite with a high magnetic permeability at negative temperature and low loss at high temperature consists of Fe 2 O 3 , MnO and ZnO, and additives consisting of CaCO 3 , ZrO 2 , Co 2 O 3 and SnO 2 are also added. A method for preparing the manganese-zinc ferrite is further provided. According to the method, by reasonably adjusting a ratio of Mn to Zn to Fe and appropriately increasing the content of Co in the additives, a manganese-zinc ferrite material with both a high magnetic permeability and low loss at about −20° C. and low loss at 120-140° C. is obtained. The manganese-zinc ferrite material has two loss valleys at about −20° C. and about 100° C. in a temperature range of −30° C. to 140° C., which expands the application range of the manganese-zinc ferrite material.

A solar battery, a method for preparing the same and a use thereof are provided. The solar battery includes a substrate. A side of the substrate is successively provided with an emission layer, a first passivating layer and a first antireflection layer, and the other surface of the substrate is successively provided with a passivating contact structure and a second antireflection layer. A material of the first passivating layer includes gallium oxide. The method for preparing the solar battery includes: successively preparing an emission layer, a first passivating layer and a first antireflection layer on a side of the substrate, and successively preparing a passivating contact structure and a second antireflection layer on the other side of the substrate. The solar battery can be used as a power supply.

A casting type power inductor includes a base, a hollow coil, and a casting. The base includes a flange and a central column. The central column is fixedly arranged at the center of the flange. The hollow coil is tightly wound on the central column. The casting is used for wrapping the base and the hollow coil. The preparation method for the casting type power inductor includes blank preparation, coil winding, combined body arrangement, slurry casting, curing treatment, and post-treatment that are sequentially performed. According to the casting type power inductor, pressureless forming can be implemented by casting a magnetic slurry, so that a short circuit, an open circuit, or deviation to the edge of the inductor, of the coil caused by excessive pressure is avoided.