Hon Young Semiconductor Corporation

A semiconductor device includes a substrate, an epitaxial layer and a gate structure. The epitaxial layer is over the substrate. The epitaxial layer includes a drift region, a plurality of doped pillars, a well region, a source region, and a channel doped region. The doped pillars are in the drift region. The well region is over the drift region. The source region is over the well region. The channel doped region is under the source region and in the well region. The substrate, the drift region, the source region, and the channel doped region have a first conductivity type. The well region and the doped pillars have a second conductivity type different from the first conductivity type. A doping concentration of the channel doped region is lower than a doping concentration of the source region. The gate structure is embedded in the epitaxial layer.

A semiconductor device includes a substrate, an epitaxial layer, a well region, a current spreading layer, a source region, a base region and a gate layer. The epitaxial layer is on the substrate. The well region is in the epitaxial layer. The current spreading layer is in the epitaxial layer and below the well region. The current spreading layer includes a plurality of the first doped regions and a plurality of the second doped regions, the first doped regions includes a plurality of dopants of the first semiconductor-type, the second doped regions includes a plurality of dopants of the second semiconductor-type, and the second semiconductor-type is different from the first semiconductor-type. The source region is in the well region. The base region is in the well region and adjacent to the source region. The gate layer is over the epitaxial layer.

A method of forming a semiconductor structure includes the following operations. A semiconductor epitaxial layer is formed on a first semiconductor substrate. A first side of the semiconductor epitaxial layer is adhered to a transfer substrate by an adhesive layer covering the first side of the semiconductor epitaxial layer. The semiconductor epitaxial layer and the first semiconductor substrate are turned over by the transfer substrate. The first semiconductor substrate is removed to expose a second side of the semiconductor epitaxial layer opposite to the first side. A first semiconductor doped region is formed on the second side of the semiconductor epitaxial layer. After the first semiconductor doped region is formed, the adhesive layer and the transfer substrate are removed.

A semiconductor device includes a substrate, an epitaxial layer, a first well, a dielectric layer, a gate electrode layer, and a source pad. The substrate includes an array region and a peripheral region. The epitaxial layer is over the substrate. The first well is in the epitaxial layer. The dielectric layer is over the epitaxial layer and over the array region and the peripheral region. The gate electrode layer is over the dielectric layer and over the array region and the peripheral region. The gate electrode layer has at least one opening over the peripheral region. The source pad is over the gate electrode layer and extends from over the array region to over the peripheral region. The source pad has at least one first extending portion extending through the at least one opening of the gate electrode layer downward to the first well.

A semiconductor device includes a substrate, an epitaxial layer, a well region, a source region, a base region, a first JFET region, a second JFET region, a gate dielectric layer and a gate layer. The epitaxial layer is at a side of the substrate. The well region is in the epitaxial layer. The source region is in the well region. The base region is in the well region and adjacent to the source region. The first JFET region is adjacent to the well region. The second JFET region is in the first JFET region. A doping concentration of the second JFET region is higher than a doping concentration of the first JFET region. The gate dielectric layer is at a side of the epitaxial layer away from the substrate. The gate layer is at a side of the gate dielectric layer away from the epitaxial layer.

Some embodiments of the present disclosure provide a method of forming a semiconductor device including forming a dielectric layer stack on an epitaxial layer. The dielectric layer stack includes at least one first layer and at least one second layer, the at least one first layer is made of a first material, the at least second layer is made of a second material different from the first material. The dielectric layer stack is patterned to form a staircase-shaped dielectric layer stack. An ion implantation process is performed to the epitaxial layer by using the staircase-shaped dielectric layer stack.

A method of forming a semiconductor structure includes the following operations. A semiconductor epitaxial layer is formed on a first semiconductor substrate. A first side of the semiconductor epitaxial layer is adhered to a transfer substrate by an adhesive layer covering the first side of the semiconductor epitaxial layer. The semiconductor epitaxial layer and the first semiconductor substrate are turned over by the transfer substrate. The first semiconductor substrate is removed to expose a second side of the semiconductor epitaxial layer opposite to the first side. A first semiconductor doped region is formed on the second side of the semiconductor epitaxial layer. After the first semiconductor doped region is formed, the adhesive layer and the transfer substrate are removed.

A method of forming a semiconductor device includes forming a gate oxide layer over an epitaxial layer including a drift region and a source region, forming a first boron-containing layer over the gate oxide layer, performing a thermal process, such that the boron in the first boron-containing layer moves in a direction toward the epitaxial layer to form a second boron-containing layer between the epitaxial layer and the gate oxide layer, and forming a gate over the gate oxide layer.

A semiconductor device includes a substrate and an epitaxial layer over the substrate. The epitaxial layer is divided into an active region, a transition region, and an edge termination region. The epitaxial layer includes a drift region in the active region, the transition region, and the edge termination region, a transition doped region in the transition region, and a termination doped region in the edge termination region. The drift region has a first conductivity type. The transition doped region and the termination doped region have a second conductivity type. A doping concentration of the termination doped region is lower than that of the transition doped region. The distance between an edge of the termination doped region away from the transition doped region and an edge of the termination doped region in contact with the transition doped region is greater than a thickness of the epitaxial layer.

A semiconductor device includes a substrate, a drift region, a channel region, a source region, a gate electrode layer and a gate pad. The drift region is located in the substrate. The gate electrode layer is located above the drift region and is adjacent to the channel region and the source region, in which the gate electrode layer includes a cell area, a connection area and a gate pad area. The cell area at least covers the channel region in the substrate. The connection area is adjacent to the cell area, in which the connection area has at least one opening that penetrates the connection area. The gate pad contacts the gate pad area of the gate electrode layer, in which the gate pad and the at least one opening of the connection area of the gate electrode layer is laterally separated.