INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

A semiconductor device includes a first and a second nitride-based semiconductor layers, a source electrode, a drain electrode, a gate electrode, and a first and a second stress modulation layers. The first nitride-based semiconductor layer has a first thickness. The second nitride-based semiconductor layer has a bandgap less than a bandgap of the first nitride-based semiconductor layer to form a heterojunction therebetween. The second nitride-based semiconductor layer has a second thickness, and a ratio of the first thickness to the second thickness is in a range from 0.5 to 5. The first and the second stress modulation layers provide a first and a second drift regions of the second nitride-based semiconductor layer with stress, respectively, resulting in induction of a first and a second 2DHG regions within the first and the second drift regions, respectively.

A semiconductor device includes a drain electrode, a first source electrode, a second source electrode, a first gate electrode, and a second gate electrode. The first gate electrode is arranged between the first source electrode and the drain electrode. The first gate electrode extends along a first direction. The second gate electrode is arranged between the second source electrode and the drain electrode. The second gate electrode extends along the first direction. The first gate electrode is arranged above a first imaginary line substantially perpendicular to the first direction in a top view of the semiconductor device and the second gate electrode is arranged below a second imaginary line substantially perpendicular to the first direction in the top view of the semiconductor device.

A nitride-based semiconductor device includes a substrate, a buffer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a S/D electrode, a second S/D electrode, and a gate electrode. The buffer is disposed over the substrate and includes at least one layer of a nitride-based semiconductor compound doped with an acceptor at a top-most portion of the buffer. The first and second nitride-based semiconductor layers are disposed over the buffer. The first S/D electrode is disposed over the second nitride-based semiconductor layer, in which the first S/D electrode extends downward to a position lower than the first nitride-based semiconductor layer, so as to form at least one first interface with the top-most portion of the buffer, making contact with the at least one layer of the nitride-based semiconductor compound. The second S/D electrode and the gate electrode are disposed over the second nitride-based semiconductor layer.

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate structure, a first spacer, a second spacer and a drain electrode. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer. The first spacer is disposed adjacent to a first surface of the gate structure. The second spacer is disposed adjacent to a second surface of the gate structure. The drain electrode is disposed relatively adjacent to the second spacer than the first space. The first spacer has a first length, and the second spacer has a second length greater than the first length along the first direction.

A nitride-based semiconductor device includes a first and second nitride-based semiconductor layers, a doped III-V semiconductor layer, a gate electrode, a first and second source/drain (S/D) electrodes. The doped III-V semiconductor layer is disposed over the second nitride-based semiconductor layer and has first and second current-leakage barrier portions which extends downward from atop surface of the doped III-V semiconductor layer. The gate electrode is disposed above the doped III-V semiconductor layer, in which the gate electrode has a pair of opposite edges between the first and second current-leakage barrier portions. One of the edges of the gate electrode coincides with the first current-leakage barrier portion. The first current-leakage barrier portion is located between the first S/D electrode and the gate electrode. The second current-leakage barrier portion is located between the second S/D electrode and the gate electrode.

A semiconductor device includes a gate electrode, first and second passivation layers, first and second field plates. The gate electrode is disposed above nitride-based semiconductor layers. The first passivation layer covers the gate electrode. The first field plate is disposed on the first passivation layer. The first passivation layer has a first portion covered with the first field plate and a second portion free from coverage of the first field plate. The second passivation layer covers the first field plate. The second field plate is disposed over the second passivation layer. The second passivation has a first portion covered with the second field plate and a second portion is free from coverage of the second field plate. A thickness difference between the first and second portions of the first passivation layer is less than a thickness difference between the first and second portions of the second passivation layer.

A nitride-based semiconductor device includes first and second nitride-based semiconductor layers, first electrodes, doped nitride-based semiconductor layers, a second electrode, and gate electrodes. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The first and second nitride-based semiconductor layers collectively have an active portion and an electrically isolating portion surrounding the active portion. The first electrodes are disposed over the second nitride-based semiconductor layer. The first electrodes, doped nitride-based semiconductor layers, the gate electrode, and the second electrode are disposed over the second nitride-based semiconductor layer. Each of the doped nitride-based semiconductor layers has a side surface facing away from the second electrode and spaced apart from the interface.

A semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a pair of first electrodes, a second electrode, a doped nitride-based semiconductor layer, and a pair of gate electrodes. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The first and second nitride-based semiconductor layers collectively have an active portion and an electrically isolating portion that is non-semi-conducting and surrounds the active portion to form an interface therebetween. The first electrodes are disposed over the second nitride-based semiconductor layer. The second electrode are disposed over the second nitride-based semiconductor layer and between the first electrodes. The doped nitride-based semiconductor layer is disposed over the second nitride-based semiconductor layer and between the first electrodes and surrounding the second electrode. The gate electrodes are disposed over the doped nitride-based semiconductor layer and located at opposite sides of the second electrode.

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a barrier layer, a third nitride semiconductor layer and a gate structure. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The barrier layer is disposed on the second nitride semiconductor layer and has a bandgap greater than that of the second nitride semiconductor layer. The third nitride semiconductor layer is doped with impurity and disposed on the barrier layer. The gate structure is disposed on the third nitride semiconductor layer.

The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a first source electrode disposed on a first side of the first gate conductor, a first field plate disposed on a second side of the first gate conductor; and a capacitor having a first conductive layer and a second conductive layer and disposed on a second region of the second nitride semiconductor layer. Wherein the first conductive layer of the capacitor and the first source electrode have a first material, and the second conductive layer of the capacitor and the first field plate have a second material.