INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

A nitride-based semiconductor device includes a first and second nitride-based semiconductor layers, two or more source/drain (S/D) electrodes, a gate electrode, a doped III-V semiconductor layer, a gate protection layer and a first passivation layer. The doped III-V semiconductor layer is disposed between the second nitride-based semiconductor layer and the gate electrode. The gate protection layer caps the gate electrode and the doped III-V semiconductor layer and is separated from the S/D electrodes. The first passivation layer covers the second nitride-based semiconductor layer and the gate protection layer and abuts against sidewalls of the S/D electrodes which are separated from the gate protection layer by the first passivation layer.

A nitride-based semiconductor circuit including a substrate structure, a nitride-based heterostructure, connectors, and connecting vias is provided. The substrate structure includes a first type semiconductor substrate, and a second type semiconductor substrate. The second type semiconductor substrate is embedded in a region of the first type semiconductor substrate. The first type semiconductor substrate has first dopants, and the second type semiconductor substrate has second dopants to form a pn junction between the first type semiconductor substrate and the second type semiconductor substrate. The nitride-based heterostructure is disposed on the substrate structure. The connectors are disposed on the nitride-based heterostructure. The connecting vias include a first interconnection and a second interconnection. The first interconnection electrically connects the first region of the first type semiconductor substrate to one of the connectors. The second interconnection electrically connects the second type semiconductor substrate to another one of the connectors.

A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a gate electrode, a first source electrode, a second source electrode, and a drain electrode. The second nitride-based semiconductor layer includes a drift region doped, a first barrier region, and a second barrier region. The first and second barrier regions extend downward from a top surface of the second nitride-based semiconductor layer and are separated from each other by a portion of the drift region. The gate electrode is disposed on the first barrier region. The first source electrode is disposed on the portion of the drift region. The second source electrode is disposed on the second barrier region and is electrically coupled with the first source electrode. The drain electrode is connected to the first nitride-based semiconductor layer.

A nitride-based semiconductor device includes a first and second nitride-based semiconductor layers, two or more source/drain (S/D) electrodes, a gate electrode, a doped III-V semiconductor layer, a gate protection layer and a first passivation layer. The doped III-V semiconductor layer is disposed between the second nitride-based semiconductor layer and the gate electrode. The gate protection layer caps the gate electrode and the doped III-V semiconductor layer and is separated from the S/D electrodes. The first passivation layer covers the second nitride-based semiconductor layer and the gate protection layer and abuts against sidewalls of the S/D electrodes which are separated from the gate protection layer by the first passivation layer.

A method for manufacturing a semiconductor device including steps as follows is provided. A first nitride-based semiconductor layer is formed over a substrate. A second nitride-based semiconductor layer is formed on the first nitride-based semiconductor layer. A gate electrode is formed over the second nitride-based semiconductor layer. A first passivation layer is formed on the second nitride-based semiconductor layer to cover the gate electrode. A first blanket field plate is formed on the first passivation layer. The first blanket field plate is patterned to form a first field plate above the gate electrode using a wet etching process. A second passivation layer is formed on the first passivation layer to cover the first field plate. A second blanket field plate is formed on the second passivation layer. The second blanket field plate is patterned to form a second field plate above the first field plate using a dry etching process.

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

The present invention provides a nitride-based multi-channel switching device having a plurality of transistors. The multi-channel switching device comprises a substrate, a plurality gate structures, a plurality of source electrodes and a plurality of drain electrodes. The gate structures, source electrodes and drain electrodes are grouped to form the plurality of transistors and arranged such that each gate structure disposed between a source electrode and drain electrode. Each group of the gate structures are electrically interconnected and connected to at least one gate pad corresponding to each of the transistor. Each group of the drain electrode are electrically interconnected and connected to at least one drain pad corresponding to each of the transistor. All groups of the source electrodes are electrically interconnected and connected to at least one common source pad.

A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a gate electrode, and a third nitride-based semiconductor layer. The first nitride-based semiconductor layer has at least one trench. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and spaced apart from the trench. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The gate electrode is disposed above the second nitride-based semiconductor layer and between the source and drain electrodes, so as to at least define a drift region between the gate electrode and the drain electrode and overlaps with the trench. The third nitride-based semiconductor layer is at least disposed in the trench and extends upward from the trench to make contact with the second nitride-based semiconductor layer.

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.