Kioxia Corporation

A semiconductor memory includes a memory cell, a bit line electrically connected to the memory cell, a sense amplifier including a first latch circuit, a first hookup circuit, a second latch circuit, a first wiring, and a first pre-charge circuit. The sense amplifier is in a first circuit area. The first hookup circuit is in a second circuit area and configured to control connection between the bit line and the sense amplifier. The first wiring is connected between the first latch circuit and the second latch circuit. The first pre-charge circuit includes a first transistor in a third circuit area between the first circuit area and the second circuit area. The first transistor has a first end connected to the first wiring at a first position in the third circuit area and a second end connectable to a terminal supplied with one of a pre-charge voltage and a ground voltage.

According to one embodiment, a memory device is configured to execute an efficient read operation is provided. The memory device includes a plurality of memory cells, a word line, and a controller. Each of the memory cells stores first to fifth bit data based on the threshold voltage. The memory cells store a first page to a fifth page respectively corresponding to the first bit data to the fifth bit data. A word line is coupled to the memory cells. A controller executes a read operation for reading data from the memory cells by applying a read voltage to the word line. Numbers of times the controller applies read voltages different from one another to the word line in read operations for the first page to the fifth page are 7, 6, 6, 6, and 6, respectively.

A solid-state storage device is provided, which includes a controller and a non-volatile memory. The controller selects a first word line group from a plurality of word line groups obtained by classifying the word lines based on a read threshold voltage of each word line, and a representative word line corresponding to each word line group is set based on the read threshold voltage associated with each word line group. The controller uses the read threshold voltage of a first representative word line corresponding to the first word line group to read page data of the first representative word line. When the controller cannot correctly read the page data of the first representative word line using the read threshold voltage of the first representative word line, the controller updates the read threshold voltage of the first representative word line in the first word line group.

A memory system includes a semiconductor memory device including a plurality of memory cells each configured to store data in a non-volatile manner according to a threshold voltage thereof and connected to a word line, and a controller configured to perform an error correction based on hard bit data and soft bit data read from the plurality of memory cells, generate a first table based on corrected data, determine a voltage difference between a first voltage and a second voltage, the first voltage being a voltage applied to the word line when the data being corrected is read, and correct the first table based on the voltage difference.

A memory device includes a first memory cell and a second memory cell each corresponding to a first column address, a first sense amplifier unit, a first bit line connected between the first memory cell and the first sense amplifier unit, and a second bit line connected between the second memory cell and the first sense amplifier unit.

A semiconductor memory device comprises: a first pad receiving a first signal; a second pad receiving a second signal; a first memory cell array; a first sense amplifier connected to the first memory cell array; a first data register connected to the first sense amplifier and configured to store user data read from the first memory cell array; and a control circuit configured to execute an operation targeting the first memory cell array. The first memory cell array comprises a plurality of first memory strings. The first memory strings each comprise a plurality of first memory cell transistors. In a first mode of this semiconductor memory device, a command set instructing the operation is inputted via the first pad. In a second mode of this semiconductor memory device, the command set is inputted via the second pad.

A memory system includes a non-volatile memory and a memory controller configured to receive a command including an access target in the non-volatile memory and setting information from an external device and configured to control a writing operation or a reading operation to the access target. The memory controller has a condition setting circuit. The condition setting circuit is capable of performing the writing operation or the reading operation under a plurality of different conditions. The memory controller performs the writing operation or the reading operation under one of the plurality of different conditions selected by the condition setting circuit in accordance with the setting information.

A memory system includes a memory chip and a memory controller that controls the memory chip. In a write operation, the memory controller transfers a first timing signal synchronized with a first clock and first data synchronized with the first timing signal to the memory chip. In a read operation, the memory controller transfers a second timing signal synchronized with at least a second clock to the memory chip. The second clock has a frequency different from a frequency of the first clock. In the read operation, the memory chip generates a third timing signal synchronized with the second clock based on the second timing signal, and transfers the third timing signal and second data synchronized with the third timing signal to the memory controller.

A memory system includes a semiconductor memory device including a plurality of memory cells each configured to store data in a non-volatile manner according to a threshold voltage thereof and connected to a word line, and a controller configured to perform an error correction based on hard bit data and soft bit data read from the plurality of memory cells, generate a first table based on corrected data, determine a voltage difference between a first voltage and a second voltage, the first voltage being a voltage applied to the word line when the data being corrected is read, and correct the first table based on the voltage difference.

A memory system includes a nonvolatile memory and a control circuit. The nonvolatile memory includes a plurality of word lines, a plurality of bit lines, and a plurality of storage elements. The control circuit includes an ECC circuit that detects and corrects a data error stored in the plurality of storage elements, acquires first data by reading data stored in the plurality of storage elements of a page connected to the same word line with a first read voltage, acquires second data obtained by correcting the first data when the first data can be corrected by the ECC circuit, and writes data based on the second data to the plurality of storage elements of the page.