MATERION CORPORATION

Techniques and/or systems are disclosed herein for forming a window cavity wafer that includes fabricating a window wafer by: providing a window wafer substrate having two faces; etching fiducials onto one or more faces of the window wafer substrate; and applying one or more optical coatings to on one or more faces of the window wafer substrate. Next, fabricating a spacer wafer separate from the window wafer by: providing a spacer wafer substrate having two faces; and forming an array of through-holes in the spacer wafer substrate. Then, bonding the spacer wafer to the window wafer to form the window cavity wafer; and forming discrete metal frames on a face of the window cavity wafer.

Processes are disclosed for forming beryllium-copper metal rings having a fine and uniform grain structure. A raw BeCu casting is pre-forged and turned to form a BeCu billet. The BeCu billet is subjected to various heat treatment and cooling cycles to obtain/maintain combinations of advantageous material properties. Generally, the BeCu billet is preheated, hot worked via forging, heated again, hot worked again via ring rolling followed by air cooling, solution annealed followed by quenching, and heated a final time followed by air cooling.

Methods for grain refinement of beryllium articles are disclosed. Grain refinement allows the beryllium article to have beneficial properties in terms of strength and durability. One method stabilizes the β-phase of the beryllium that is precipitated after cycling above a temperature that is greater than or equal to the beta transus temperature.

An Al—Sc alloy sputtering target. The target comprising from 1.0 at % to 65 at % scandium and from 35 at % to 99 at % aluminum and having a microstructure including a first aluminum matrix phase and a second phase dispersed uniformly therethrough. The second phase comprises one or more compounds corresponding to the formula Sc x Al y , where x is from 1 to 2 and y is from 0 to 3.

A crucible having a heat treated body. The heat treated body comprises a composition including an oxide material, from 5 wt % to 50 wt % a nitride material, and optionally a sintering aid. A weight ratio of the nitride material to the oxide material ranges from 0.02:1 to 2.0:1. The heat treated body has an oxide material lattice structure with nitride material at least partially encapsulated therein.

An interference filter includes a layers stack comprising a plurality of layers of at least: layers of amorphous hydrogenated silicon with added nitrogen (a-Si:H,N) and layers of one or more dielectric materials, such as SiO 2 , SiO x , SiO x N y , a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive, or so forth. The interference filter is designed to have a passband center wavelength in the range 750-1000 nm inclusive. Added nitrogen in the a-Si:H,N layers provides improved transmission in the passband without a large decrease in refractive index observed in a-Si:H with comparable transmission. Layers of a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive provide a smaller angle shift compared with a similar interference filter using SiO 2 as the low index layers.

An apparatus (e.g., a multi-spectral optical filter array, an optical wafer, an optical component) has an aperture mask printed directly thereon, the aperture mask including a positive or negative photoresist. The apparatus includes a substrate having the aperture mask printed on at least one of a light entrance surface or a light exit surface of the substrate so as to provide an aperture over a portion of the substrate. The photoresist from which the aperture mask is formed is photo-definable or non-photo-definable, and is deposited/printed to form the aperture mask on the substrate.

An interference filter includes a layers stack comprising a plurality of layers of at least: layers of amorphous hydrogenated silicon with added nitrogen (a-Si:H,N) and layers of one or more dielectric materials, such as SiO 2 , SiO x , SiO x N y , a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive, or so forth. The interference filter is designed to have a passband center wavelength in the range 750-1000 nm inclusive. Added nitrogen in the a-Si:H,N layers provides improved transmission in the passband without a large decrease in refractive index observed in a-Si:H with comparable transmission. Layers of a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive provide a smaller angle shift compared with a similar interference filter using SiO 2 as the low index layers.

A sputtering target comprising a target insert comprising a target metal compound and a skirt structure including a primary skirt and a secondary skirt. The primary skirt is disposed adjacent least a portion of a secondary skirt and comprises a first metal compound. The secondary skirt comprises a second metal compound that is different from the first metal compound.

An integral resistance heater is disclosed. The heater includes a beryllium oxide (BeO) ceramic body having a first surface and a second surface. A heating element is formed from a metal foil or metallizing paint and is printed onto the top or second surface of the beryllium oxide ceramic body.