MEISHAN BOYA ADVANCED MATERIALS CO., LTD.

The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown.

The present disclosure provides a crystal preparation method, including: obtaining a first wafer after a first treatment, using the first wafer after the first treatment as a first seed crystal to grow a precursor crystal based on a top-seeded solution growth method; performing a second treatment on the precursor crystal; and using the precursor crystal after the second treatment as a second seed crystal to grow a target crystal based on a physical vapor transport method.

Disclosed herein are a method, a system, and a device for controlling a crystal growth device. The method includes: obtaining historical growth data of at least one crystal growth device, the historical growth data including historical growth control data and historical growth result data; and determining a control mode of a target crystal growth device based on the historical growth data and a target growth result, the control mode including at least one of a temperature control mode and a power control mode.

Embodiments of the present disclosure may provide a system for preparing a crystal. The system may include a furnace, a heat insulation drum, a crucible component, a resistance heating component, and a heat insulation layer. The heat insulation drum may be located inside the furnace. The crucible component may be located inside the heat insulation drum. The resistance heating component may include a heating body. The heating body may include a plurality of heating units. The plurality of heating units may form a uniform temperature field. The heat insulation layer may be located around an outer side of the plurality of heating units, a top portion of the heat insulation drum, and/or a bottom portion of the crucible component.

The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown.

Embodiments of the present disclosure provide a crystal preparation device and a crystal preparation method. The crystal preparation device comprises a cavity configured to accommodate raw material; a laser heating assembly configured to heat the raw material; and a control assembly configured to adjust a heating parameter of the laser heating assembly in real-time during a crystal growth process.

The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.

Embodiments of the present disclosure provide a heating system and a high-frequency power supply applied to the heating system. The heating system comprises a pot body configured to contain powder to be heated; a high-frequency power supply configured to supply an output signal with a power of not less than 5 kw and a frequency of not less than 1 MHz; and a resonant assembly configured to generate an electromagnetic field for directly heating the powder to be heated under driving of the output signal. The present disclosure provides a high-frequency signal to the resonant assembly through the high-frequency power supply, drives the resonant assembly to generate an electromagnetic field that directly acts on the powder, heats the powder while reducing the energy transmitted to the pot body, and avoids distortion or evaporation of the pot body due to heating, thereby realizing the heating of high-melting-point powder.

The embodiments of the present disclosure provide a crystal preparation device and a crystal preparation method. The crystal preparation device comprises a growth chamber configured to place a raw material; a heating component configured to heat the growth chamber; a pulling component configured for pulling growth; and a guide component in a transmission connection with the pulling component. The crystal preparation method comprises providing a raw material in the growth chamber; descending the pulling component bonded with a seed crystal to a vicinity of the raw material, the pulling component being in transmission connection with the guide component and at least a portion of the pulling component being located in the guide component; heating the growth chamber to form a raw material melt; and growing a crystal based on the seed crystal and the raw material melt through a transmission movement of the pulling component and the guide component.

Embodiments of the present disclosure provide a seed crystal holder and a crystal growth method. The seed crystal holder includes a seed crystal holder body and a connecting rod. The seed crystal holder body is fixed to one end of the connecting rod, and a seed crystal is provided on one side of the seed crystal holder body away from the connecting rod.