National Institute for Materials Science

To provide a thermoelectric device for easy positioning and bonding processes and a thermoelectric stack for such device. A representative embodiment of the present invention is a thermoelectric stack comprising a thermoelectric material layer having a first surface and a second surface opposite each other and an isolation layer stacked on the first surface of the thermoelectric material layer, wherein the thermoelectric material layer has a magnetization component perpendicular to the first surface and the second surface, and the isolation layer comprises, when a second thermoelectric stack is stacked on the surface opposite to the surface on which the thermoelectric material layer is to be stacked, an insulation region that electrically insulates the thermoelectric material layer and an electrode region that electrically conducts the thermoelectric material layer. Also, a representative embodiment of the present invention is a thermoelectric device in which such thermoelectric stacks are stacked, wherein a plurality of first thermoelectric stacks in which thermoelectric material layers have positive transverse thermoelectric power and a plurality of second thermoelectric stacks in which thermoelectric material layers have negative transverse thermoelectric power are alternately brought into close contact with each other due to the magnetic force of their magnetized components, interposing their respective isolation layers, and are electrically connected by electrode regions of the isolation layers.

The invention provides a carbon structure for the positive electrode of an air battery, which comprises a carbon nanotube as a carbon material, wherein the carbon nanotube has an average diameter of 1 nm to 10 nm inclusive, an average length of 1 μm to 100 μm inclusive, and an aspect ratio of 1,000 to 10,000 inclusive.

A GaN crystal includes a Ni-doped GaN layer. The Ni-doped GaN layer has a Ni concentration of 1.0×10 16 atoms/cm 3 or more and 1.0×10 20 atoms/cm 3 or less. The Ni-doped GaN layer satisfies at least one of: (1) a total donor impurity concentration is less than 2.0×10 17 atoms/cm 3 ; or (2) the full width at half maximum of a rocking curve by ( 004 ) X-ray diffraction is 50 arcsec or less.

The present invention provides an alloy that is excellent in oxidation resistance and structure stability, having high strength and a significantly improved temperature capability, and that is suitable for turbine disk applications. The nickel-cobalt-based alloy of the present invention has a composition comprising: 15% by mass or more and 43% by mass or less of cobalt; 6% by mass or more and less than 12% by mass of chromium; 3% by mass or more and 9% by mass or less of tungsten; 1% by mass or more and 6% by mass or less of aluminum; 1% by mass or more and 8% by mass or less of titanium; 7% by mass or less of tantalum; 0.01% by mass or more and 0.15% by mass or less of carbon; 0.01% by mass or more and 0.15% by mass or less of boron; 0.01% by mass or more and 0.15% by mass or less of zirconium; and the balance nickel and inevitable impurities.

Provided is a molecular metal-based single crystalline thin film having high electrical conductivity and high light transmittance. The molecular metal-based single crystalline thin film has a light transmittance of 80% or more at a wavelength of 360-830 nm, wherein the molecular metal is a compound represented by Formula (I). In Formula (I), X represents at least one atom selected from the group consisting of S, O, and Se, the plurality of X's may be the same or different, R represents a hydrogen atom or a monovalent substituent, the plurality of R's may be the same or different, provided that at least one among the R's is at least one group selected from the group consisting of groups represented by Formula (II), and the R's on adjacent atoms may be linked to each other to form a ring. In Formula (II), * represents a bonding position, and R 11 represents a hydrogen atom or a C1-4 alkyl group.

[Object] To provide a thermoelectric body that can be deposited on any substrate, which is not limited to a single crystal bulk material or an epitaxially grown thin film, and is capable of exhibiting high coercive force and residual magnetization with respect to in-plane magnetization. [Solving Means] A thermoelectric body that is a magnetic film for use in a thermoelectric generation element utilizing an anomalous Nernst effect, characterized by having an easy axis of magnetization in an in-plane direction and an amorphous structure. Favorably, the thermoelectric body is characterized in that Sm p Co 100-p (0<p≤50) or Sm p (Fe q Co 100-q ) 100-p (0<p≤50, 0≤q≤100) is included.

Provided is a ferroelectric capacitor in which an increase in coercive electric field and degradation of rewrite resistance are suppressed with a simple structure. The ferroelectric capacitor of the present invention is a ferroelectric capacitor, including: an upper electrode; a lower electrode; and a ferroelectric layer arranged between the upper electrode and the lower electrode so as to be in close contact therewith, wherein at least one electrode selected from the group consisting of the upper electrode and the lower electrode includes a composite metal oxide electrode formed so as to contain a composite metal oxide in which a second oxide is added to a conductive first oxide containing at least one metal element selected from the group consisting of In, Ga, Zn, Sn, Ru, Ir and Sr at a molar ratio smaller than that of the first oxide, the second oxide having oxygen dissociation energy, when considered as a metal oxide of one of the metal elements, which is larger by 200 KJ/mol or more, as compared to the metal oxide having the largest oxygen dissociation energy among the first oxides.

Provided is an electron gun chamber for a scanning electron microscope with (a) an electron source chamber; (b) an intermediate room; (c) an air lock valve installation part; (d) exhaust holes for a preliminary vacuum exhaust pump; and (e) an opening and closing means.

Provided are a thermoelectric material having excellent thermoelectric characteristics at room temperature; a method for producing same; and a thermoelectric power generation element. In an embodiment of the present invention, the thermoelectric material contains an inorganic compound containing magnesium (Mg), silver (Ag), antimony (Sb) and copper (Cu), and is represented by the formula Mg 1−a Cu a Ag b Sb c , and the parameters a, b and c satisfy: 0<a≤0.1, 0.95≤b≤1.05 and 0.95≤c≤1.05. The inorganic compound may be an α phase of a half-Heusler structure and have the symmetry of the space group I-4c2.

According to one embodiment, a photodetector includes a first electrode, a second electrode, and a stacked body. At least a part of the stacked body is provided between the first electrode and the second electrode. The stacked body includes a photoelectric conversion layer being along a first plane, and an optical member. The photoelectric conversion layer is between the first electrode and the second electrode in a first direction crossing the first plane. A direction from the photoelectric conversion layer to the optical member is along the first direction. The optical member includes a first optical layer. The first optical layer includes a plurality of first regions aligned along the first plane, and a first intermediate region between the plurality of first regions. A first region refractive index of the plurality of first regions is different from a first intermediate region refractive index of the first intermediate region.