NuFlare Technology, Inc.

According to one aspect of the present invention, a multi-charged particle beam writing method includes assigning, to an irradiation unit region assigned one group of a plurality of groups in a plurality of irradiation unit regions, at least one sub shot which has been preset according to either one of an irradiation time set for an irradiation unit region concerned and a value calculated based on the irradiation time, in a plurality of sub shots each having one of a plurality of sub irradiation time obtained by dividing a maximum irradiation time for one shot, and assigning, to an irradiation unit region assigned another group in the plurality of groups, at least one sub shot which includes a sub shot other than the at least one sub shot having been set for the irradiation unit region assigned the one group in the same pixel-set.

A multi-charged-particle-beam writing method includes calculating a magnification correction amount of an acquired beam array shape by using a first coefficient indicating a displacement component which deviates in a first direction in proportion to a design coordinate in the first direction of the acquired beam array shape, where the first direction is parallel to a direction of writing performed while continuously moving a stage with a target object thereon; calculating a rotation correction amount of the acquired beam array shape by using a second coefficient indicating a displacement component which deviates in a second direction, being orthogonal to the first direction, in proportion to a design coordinate in the first direction of the acquired beam array shape; and calculating a modulation dose amount for each unit region of a plurality of unit regions, based on at least one of a third coefficient, and a fourth coefficient.

In one embodiment, a charged particle beam writing apparatus includes a charged particle source generating and emitting a beam, a blanker controlling ON/OFF of the beam, a stopping aperture substrate having a first opening through which the beam, when controlled to be ON by the blanker, passes toward a substrate, a scattering section through which the beam transmits while being scattered when deflected by the blanker to be OFF, and an absorbing member that absorbs the beam having transmitted through the scattering section.

The purpose of the present invention is to correct a beam irradiation position shift caused by charging phenomena with high accuracy. A charged particle beam writing method includes virtually dividing a writing region of the substrate so as to have a predetermined mesh size and calculating a pattern density distribution representing an arrangement ratio of the pattern for each mesh region, calculating a dose distribution using the pattern density distribution, calculating an irradiation amount distribution using the pattern density distribution and the dose distribution, calculating a fogging charged particle amount distribution, calculating a charge amount distribution due to direct charge and a charge amount distribution due to fogging charge, calculating a position shift of a writing position based on the charge amount distribution due to direct charge and the charge amount distribution due to fogging charge, correcting an irradiation position using the position shift, and irradiating the corrected irradiation position with the charged particle beam with which a potential of a surface of the substrate becomes higher than a potential of a bottom surface of ae potential regulation member.

In one embodiment, a writing method includes calculating irradiation times for each shot of individual beams of multiple charged particle beams, setting, based on the calculated irradiation times, an ON or OFF state of each individual beam at each irradiation step in a shot cycle comprising a plurality of irradiation steps, extracting a number of beams set in the ON state at a longest irradiation step in each shot with the multiple charged particle beams, determining, based on the extracted number of beams, whether to change the shot cycle, and sequentially applying, based on the determining, the beams corresponding to the irradiation times of the plurality of irradiation steps to a substrate placed on a stage to write a pattern on the substrate, while performing tracking control such that an irradiation region irradiated with the multiple charged particle beams follows movement of the stage.

An imaging mechanism is configured to obtain an inspection image based on light for a sample. A control unit is configured to maintain a state in which the light does not continue to strike a position on the sample for a period from completion of obtainment of an inspection image of a first area to start of obtainment of an inspection image of a second area. The position is a position at which the obtainment of the inspection image of the first area is completed or the obtainment of the inspection image of the second area is started. The control unit starts maintaining the state in which the light does not continue to strike the position, after the obtainment of the inspection image of the first area is completed and then a state in which the comparison circuit cannot start comparison is maintained over a first period.

According to an embodiment, semiconductor manufacturing apparatus includes a chamber, a susceptor holding a wafer, a rotating body configured to rotate the susceptor about a predetermined central axis, a first radiation thermometer configured to measure a temperature at a first temperature measurement position of the wafer, a second radiation thermometer configured to measure a temperature at a second temperature measurement position of the wafer, a first heater for heating a central region of the wafer, a second heater for heating an outer region of the wafer, and a controller that controls power applied to each of the first heater and the second heater. A second distance from the central axis to the second temperature measurement position is longer than a first distance from the central axis to the first temperature measurement position and is shorter than 0.8 times a radius of the wafer.

In one embodiment, a multiple charged-particle beam irradiation apparatus includes a correction map generation unit calculating, for each pixel, a beam modulation rate for the pixel and a beam modulation rate for at least one of pixels surrounding the pixel, based on an amount of displacement of a beam emitted toward the pixel and a position of a pattern placed within the pixel and generating a correction map in which modulation rates are defined, and an irradiation dose correction unit calculating, for each pixel, a corrected irradiation dose by adding a value obtained by multiplying the beam modulation rate for the pixel defined in the correction map by the beam irradiation dose for the pixel and a value obtained by multiplying the beam modulation rate for the at least one pixel by a beam irradiation dose for a pixel serving as an associated destination of the at least one pixel.

An amount of charge of a substrate is promptly and accurately calculated. A charged particle beam writing method includes a step for virtually dividing a writing region of the writing target substrate in a mesh-like manner and calculating a pattern density representing an arrangement ratio of the pattern for each mesh region, a step for calculating a dose for each mesh region using the pattern density, a step for calculating a charge amount based on a film thickness of the resist film formed on the substrate and the calculated dose by using a predetermined function for charge amount calculation, the function using, as variables, the film thickness of the resist film and the dose, a step for calculating a position shift amount of a writing position from the calculated charge amount, and a step for correcting an irradiation position of the charged particle beam using the position shift amount.