PHISON ELECTRONICS CORP.

A memory management method configured for a rewritable non-volatile memory module, a memory storage device, and a memory control circuit unit are provided. The rewritable non-volatile memory module includes a plurality of dies, wherein each of the dies includes a plurality of planes, each of the planes includes a plurality of physical erasing units, and a sum of a number of the planes included in the rewritable non-volatile memory module is a first number. The method includes: grouping the plurality of physical erasing units into a plurality of management units. Each of the plurality of physical erasing units included in each of the management units belongs to a different plane, and each of the management units has a second number of the physical erasing units, wherein the second number is less than the first number.

An encoding control method, a memory storage device and a memory control circuit unit are disclosed. The method includes: performing, by an encoding circuit, a first encoding operation to generate first parity data according to write data, a first sub-matrix and a second sub-matrix of a parity check matrix; performing, by the encoding circuit, a second encoding operation to generate second parity data according to the write data, the first parity data, a third sub-matrix, a fourth sub-matrix and a fifth sub-matrix of the parity check matrix; and sending a first write command sequence to instruct a storing of the write data, the first parity data and the second parity data to a rewritable non-volatile memory module.

A data merging method can copy a new logical to physical mapping table and update a copied logical to physical mapping table according to a physical address of a recycling unit expected to be written at the same time. In this way, the number of times that the same logic to physical mapping table is read multiple times during the data merging operation can be reduced to improve the execution efficiency of the data merging operation, thereby increasing the system performance of the memory storage device.

A memory control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: generating a first operation command via one of a plurality of processing circuits, wherein the first operation command instructs to access a first memory group in a plurality of memory groups; and in response to a first state information, sending a first command sequence to the first memory group according to the first operation command to instruct the first memory group to perform an access operation. The first state information reflects a first activation state of the plurality of memory groups, and the first command sequence does not include a control command sequence configured to activate the first memory group.

A memory control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: performing a first write operation based on a first programming mode to sequentially write first data to a plurality of first chip enabled regions via a plurality of channels; after the first write operation is performed, performing a second write operation based on a second programming mode to sequentially write second data to the first chip enabled regions and at least one second chip enabled region via the channels. A total number of the first chip enabled regions is larger than a total number of the second chip enabled region.

A memory control method, a memory storage device and a memory control circuit unit are provided. The method includes: determining a retry threshold value according to decoding history information which includes information related to at least one first decoding operation previously performed; and determining whether to enter a second decoding mode according to the retry threshold value after at least one second decoding operation performed based on a first decoding mode is failed. A decoding ability of the second decoding mode is higher than a decoding ability of the first decoding mode.

A command management method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: obtaining a plurality of commands from a memory of a host system; storing the commands in a first buffer region of the memory storage device; in response to a first command and a second command meeting a pairing condition in the first buffer region, putting the first command and the second command in the first buffer region in a first command queue of the memory storage device; and continuously executing the first command and the second command in the first command queue.

A memory management method, a memory storage device, and a memory control circuit unit are provided. The memory management method includes: obtaining a first weight value corresponding to a first command in a command queue, wherein the command queue is used to store at least one command to be executed; obtaining a second weight value corresponding to at least one second command being executed; and in response to a sum of the first weight value and the second weight value being greater than a base value, delaying an execution of the first command.

A read voltage level correction method, a memory storage device, and a memory control circuit unit are provided. The method includes: using a first read voltage level as an initial read voltage level to perform a first data read operation on a first physical unit among multiple physical units to obtain a second read voltage level used to successfully read the first physical unit; recording association information between the first read voltage level and the second read voltage level in a transient look-up table; and performing a second data read operation according to a read level tracking table and the association information recorded in the transient look-up table.

A data managing method, a memory controlling circuit unit, and a memory storage device are provided. The method includes: receiving a write command for writing a plurality of first data into a rewritable non-volatile memory module; when the plurality of first data are continuous data, writing the plurality of first data respectively into a plurality of first physical erasing units by using a single-page programming mode, and recording first management information corresponding to the plurality of first physical erasing units; and when the plurality of first data are not the continuous data, writing the plurality of first data respectively into a plurality of second physical erasing units by using the single-page programming mode.