PSK Inc.

A substrate processing apparatus is provided. The substrate processing apparatus includes a chuck supporting a substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate supported on the chuck, and an edge electrode provided to surround the substrate supported on the chuck when viewed from above and to generate plasma from the gas, wherein the edge electrode has a ring shape and a groove recessed in a direction from an inner periphery of the edge electrode to an outer periphery of the edge electrode when viewed from above is formed in the edge electrode.

The present invention provides a method of detecting an abnormality in a semiconductor manufacturing process by analyzing light within a process chamber that processes a substrate by using plasma. The method may comprise a cluster classification operation of clustering reference light intensity data into a plurality of clusters, the reference light intensity data varying depending on a type of a removal target removed from a substrate; a reference data generation operation of generating reference data including a distribution of abnormality determination numerical values for each of the plurality of clusters; and an abnormality detection operation of determining whether the target data is abnormal by comparing target data for detecting the abnormality with the reference data.

An exemplary embodiment of the present invention provides a substrate treating method and a substrate treating apparatus that are capable of preventing contamination of a subsequent substrate. According to the exemplary embodiment, when the pressure monitoring operation of the transfer chamber, the method may include acquiring a graph representing the pressure change in the transfer chamber over time, and determining whether there is a pressure abnormality inside the transfer chamber based on a shape of the graph.

An apparatus for treating a substrate includes a housing including an open top and a treatment space therein, a gas supply unit configured to supply gas to the treatment space, a support unit including a chuck configured to support the substrate in the treatment space and an upper electrode provided to surround the check when viewed from the top, a dielectric plate unit including a dielectric plate arranged to oppose the substrate supported by the support unit in the treatment space, an upper electrode unit coupled to the dielectric plate unit and including an upper electrode arranged to oppose the lower electrode, and an aligning unit configured to align a horizontal arrangement of the dielectric plate unit, in which a lid extending from the housing in the horizontal direction and coupled to the upper electrode unit is provided on the housing, and the aligning unit is coupled to the lid.

The present invention provides a substrate-processing apparatus. The substrate-processing apparatus comprises: a housing having a processing space for processing a substrate; a support unit for supporting the substrate in the processing space; a plasma source for generating plasma using a process gas supplied to the processing space; and a connector assembly for supplying power to components provided in the apparatus, wherein the connector assembly may comprise a body having a groove formed on the outer surface thereof, a pin unit inserted into the groove, and a fuse installed in the pin unit.

The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may comprise: a first housing; a second housing combined with the first housing to define an internal space; a rotation coupling part for O fastening the first housing and the second housing to each other such that one of the first housing and the second housing is rotatable with respect to the other one of the first housing and the second housing; and a channel which supplies a fluid to the internal space or discharges the fluid from the internal space, and has at least a part thereof inserted into a pin hole formed in the rotation coupling part.

The present disclosure provides a substrate processing apparatus. The substrate processing apparatus includes a chamber defining a processing space, a gas supply unit supplying a process gas to the processing space, and a support unit supporting a substrate in the processing space, wherein the support unit includes a chuck supporting the substrate, a power applying RF power to the chuck, and an ionization path through which static electricity generated in the chuck is removed.

The present invention provides a substrate processing method. A substrate processing method according to an embodiment may include a first step of supplying a process gas to a chamber and exciting the process gas to react with a specific film formed on the substrate to generate a reaction product, and a second step of supplying a dissociation gas to the chamber and exciting the dissociation gas to remove the reaction product from the substrate.

The present invention provides an apparatus for treating a substrate. The apparatus for treating a substrate may include: a process treatment unit that provides a treatment space in which the substrate is treated; and a plasma generation unit that is provided above the process treatment unit and generates plasma from a process gas. The plasma generation unit includes: a plasma chamber having an electric discharge space formed therein; a shield unit surrounding the exterior of the plasma chamber; an antenna which surrounds the shield unit from the outside of the shield unit and to which high-frequency power is applied; and a connecting unit electrically connecting the shield unit and the antenna.

Provided is an apparatus for processing a substrate, the apparatus including: a chamber having a processing space; a support unit for supporting a substrate in the processing space; a gas supply unit for supplying process gas to the processing space; and a plasma generation unit for generating plasma from the process gas, in which the plasma generation unit includes: an inner coil part including a plurality of inner coils; an outer coil part provided to surround the inner coil part when viewed from above and including a plurality of outer coils; an upper power source for applying power to the inner coil part and the outer coil part, and a ground plate disposed above the inner coil part and the outer coil part and grounding the inner coil part and the outer coil part.