QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.

A light emitting diode device includes an epitaxial layered structure and first and second electrodes that are disposed on the epitaxial layered structure. The second electrode includes a body portion and at least one extending portion connected to the body portion and extending in a direction away from the body portion. The extending portion includes at least one curved section. A projection of the curved section on the epitaxial layered structure includes first and second curved sides that are opposite to each other and that are curved in an identical direction. The first curved side has a first imaginary center of curvature, and the second curved side has a second imaginary center of curvature. A distance between the first imaginary center of curvature and the second imaginary center of curvature is equal to or smaller than 5 μm.

A light-emitting diode and a display device are provided. The light-emitting diode includes a semiconductor stack and an electrode structure. The semiconductor stack includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked from top to bottom. The electrode structure includes a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer. A semiconductor contact layer is formed between the first semiconductor layer and the first electrode. The first electrode includes a metal contact layer and a metal electrode layer sequentially stacked above the semiconductor contact layer. The metal contact layer contains Ni, and the metal electrode layer is a multilayer structure or an alloy structure including at least Au. Based on the described structure, the metal contact layer and the semiconductor contact layer can be uniformly diffused to form good ohmic contact.

A light-emitting diode (LED) device includes a substrate, an LED chip, a light-transmissive element, and a bonding layer. The substrate has a first surface and a second surface opposite to the first surface in a thickness direction. The first surface has a functional region. The LED chip is disposed on the functional region of the first surface of the substrate. The light-transmissive element is disposed on the first surface of the substrate, and covers the LED chip. The bonding layer connects the substrate with the light-transmissive element, and is disposed on the substrate outside the functional region. The LED device has a surrounding surface. Cross sections of the surrounding surface in the thickness direction are straight lines that extend in the thickness direction.

A light-emitting diode (LED) includes a semiconductor structure, a transparent conducting layer, a first electrode, and a second electrode. The semiconductor structure has a lower surface and an upper surface, and includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked in a laminating direction from the lower surface to the upper surface. The transparent conducting layer is located on the second semiconductor layer. The first electrode is located on the first semiconductor layer. The second electrode is located on the transparent conducting layer. When viewing the semiconductor structure and the transparent conducting layer from above the LED. The semiconductor structure has a shortest side with a length of X μm. The transparent conducting layer has at least one bevel corner portion that has a radius of curvature R 1 ranging from 15 to X/2 μm.

A light-emitting diode (LED) chip includes a semiconductor epitaxial structure and a reflective structure. The reflective structure is formed on an upper surface and side surfaces of the semiconductor epitaxial structure. The reflective structure has a reflectance of less than 30% for light having a first wavelength which is different from a wavelength of light emitted from the semiconductor epitaxial structure. A semiconductor light-emitting device including the LED chip, and a display device including a plurality of the LED chips are also disclosed.

Disclosed are a light-emitting diode and a light-emitting device. The light-emitting diode includes: a substrate, with multiple light-emitting units arranged on the surface of the substrate. Each light-emitting unit includes adjacent first and second light-emitting units. Both the first and second light-emitting units contain an epitaxial structure, which sequentially includes, from top to bottom, a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer has a first mesa, while the second semiconductor layer has an upper surface. The first light-emitting unit includes a second port, and the second light-emitting unit includes a first port. A bridging electrode connects the first light-emitting unit to the second light-emitting unit, linking adjacent first and second ports in the direction Y, and extending across the first mesa and covering a portion of the second mesa in the direction X.

A semiconductor light-emitting element and a light-emitting device are provided. An epitaxial structure of the semiconductor light-emitting element at least includes a first semiconductor layer structure, an active layer, and a second semiconductor layer structure stacked sequentially from bottom to top. The active layer includes: an Al y Ga 1-y N barrier layer and an Al x Ga 1-x N well layer, where 0<x<1, 0<y<1; and the second semiconductor layer structure comprises an Al a Ga 1-a N material layer, where 0<a<1. As described above, the P-type layer is selected to be the Al a Ga 1-a N material layer, thereby reducing the light absorption of the P-type layer. Additionally, the P-type layer can include an ohmic contact layer formed of an Al-free nitride material layer, and a thickness of the ohmic contact layer is controlled to be less than or equal to 10 nm to reduce the content of the P-type GaN material, thereby reducing the light absorption and improving the light extraction efficiency.

A light emitting diode includes: a substrate, including first and second surfaces, and a side surface connecting the first and second surfaces; a semiconductor stack, disposed on a first surface of the substrate, the semiconductor stack includes: a first semiconductor layer, an active layer, and a second semiconductor layer; and first and second electrodes. The side surface includes a first side surface and a second side surface; and the first side surface includes at least one first cutting mark, the second side surface includes at least one second cutting mark, a spacing between one first cutting mark near the first surface and the first surface is a first spacing S 1 , a spacing between one second cutting mark near the first surface and the first surface is a second spacing S 2 , and the first spacing S 1 is not equal to the second spacing S 2 .

A light-emitting device includes a semiconductor epitaxial structure having a first surface and an opposite second surface, and including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked from the first surface to the second surface. The active layer includes a quantum well structure having multiple periodic units each including a well layer and a barrier layer. A bandgap of the barrier layer is greater than that of the well layer. The bandgaps of the barrier layers gradually increase in a direction from the first surface to the second surface; the thicknesses of the barrier layers decrease from one group of the periodic units to another group of the periodic units in the direction from the first to second surfaces.

A flip-chip light emitting device includes a substrate, a light-emitting layer, a bonding layer disposed between the substrate and the light-emitting layer, and a protective insulating layer disposed over the light-emitting layer and the bonding layer. The bonding layer has first and second upper surfaces that respectively have different first and second roughnesses.