Shenzhen Newsonic Technologies Co., Ltd.

A surface acoustic wave (SAW) filter includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate and having a bottom surface facing the bottom substrate and a top surface opposite to the bottom surface, a cavity disposed below the piezoelectric layer, a first interdigital transducer (IDT) disposed on the bottom surface of the piezoelectric layer, and a second IDT disposed on the top surface of the piezoelectric layer. An interdigital portion of the first IDT is exposed in the cavity. An interdigital portion of the second IDT is vertically aligned with the interdigital portion of the first IDT.

A bulk acoustic wave (BAW) resonator includes: a substrate; a piezoelectric layer disposed above the substrate; a first electrode disposed below the piezoelectric layer; a second electrode disposed above the piezoelectric layer; a first dielectric layer disposed below the piezoelectric layer; a second dielectric layer disposed below the first dielectric layer; a cavity disposed below the first electrode; a first grounded through hole disposed in the first dielectric layer and the second dielectric layer and spaced away from the cavity; a metal bonding layer disposed between the second dielectric layer and the substrate; a second grounded through hole disposed in the piezoelectric layer and aligned with the first grounded through hole, and a ground pad metal layer disposed on the piezoelectric layer and in the second grounded through hole, and electrically connected to the metal bonding layer.

A film bulk acoustic resonator (FBAR) structure includes, a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, the piezoelectric layer including lithium niobate or lithium tantalate, a bottom electrode disposed below the piezoelectric layer, and a top electrode disposed above the piezoelectric layer. Portions of the bottom electrode, the piezoelectric layer, and the top electrode that overlap with each other constitute a piezoelectric stack. The FBAR structure also includes a cavity disposed below the piezoelectric stack. A projection of the piezoelectric stack is located within the cavity.

A surface acoustic wave resonator device and method for manufacturing the same, and a surface acoustic wave filter, the surface acoustic wave resonator device includes: a first temperature compensation layer and an interdigital electrode structure, disposed on a base substrate, the interdigital electrode structure is at least partially embedded in the first temperature compensation layer, and includes interdigital electrodes extending along a first direction and arranged along a second direction; and a second temperature compensation layer, located on a side of the first temperature compensation layer and the interdigital electrode structure away from the base substrate; the interdigital electrode structure is surrounded and wrapped by the first temperature compensation layer in a direction parallel to the base substrate, and a surface of the interdigital electrode structure at a side away from the base substrate is covered by and in contact with the second temperature compensation layer.

A film bulk acoustic resonator (FBAR) structure includes a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, a bottom electrode disposed below the piezoelectric layer, and a top electrode disposed above the piezoelectric layer. Portions of the bottom electrode, the piezoelectric layer, and the top electrode that overlap with each other constitute a piezoelectric stack. The FBAR structure further includes a lower cavity disposed below the piezoelectric stack. A projection of the piezoelectric stack is located within the lower cavity.

A bulk acoustic wave resonator and manufacturing method thereof and filter, the bulk acoustic wave resonator includes: a resonant body structure, and a carrier structure and a cover structure on two opposite sides of the resonant body structure; a first cavity is between the carrier structure and the resonant body structure; the cover structure includes a cover substrate, and a cover bonding layer, a second cavity is between the cover structure and the resonant body structure; first and second conductive connectors, and a pad layer are on opposite sides of the resonant body structure, and the pad layer includes one or more bonding pads bonded with the cover bonding layer, each bonding pad has a recess recessed toward the resonant body structure, and the cover bonding layer includes a protrusion part filling the recess and surrounded by the bonding pad.

A bulk acoustic wave resonator and manufacturing method thereof and filter, the bulk acoustic wave resonator includes: a resonant body structure, and a carrier structure and a cover structure on two opposite sides of the resonant body structure; a first cavity is between the carrier structure and the resonant body structure; the cover structure includes a cover substrate, and a cover bonding layer, a second cavity is between the cover structure and the resonant body structure; first and second conductive connectors, and a pad layer are on opposite sides of the resonant body structure, and the pad layer includes one or more bonding pads bonded with the cover bonding layer, each bonding pad has a recess recessed toward the resonant body structure, and the cover bonding layer includes a protrusion part filling the recess and surrounded by the bonding pad.

A film bulk acoustic resonator (FBAR) structure includes a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, the piezoelectric layer including a single crystalline piezoelectric material, a bottom electrode disposed below the piezoelectric layer; a top electrode disposed above the piezoelectric layer; and a cavity disposed below the bottom electrode.

A surface acoustic wave (SAW) device includes a substrate; an interdigital transducer (IDT) having lead-out portions and arrays of interdigital electrodes formed on the substrate, wherein the interdigital electrodes includes central portions, end portions, and intermediate portions between the end portions and the lead-out portions, and a thickness of the interdigital electrodes at the end portions is greater than a thickness of the interdigital electrodes at the central portions and the intermediate portions, thereby forming protruding structures at the end portions of the interdigital electrodes; a protective layer formed on the protruding structures at the end portions of the interdigital electrodes; a first temperature compensation layer formed on the protective layer; a second temperature compensation layer formed on the first temperature compensation layer and on the central portions and the intermediate portions of the interdigital electrodes; and a passivation layer formed on the second temperature compensation layer.

An acoustic wave device includes a piezoelectric substrate and an interdigital transducer disposed on the piezoelectric substrate, the interdigital transducer including a center region, first and second edge regions, and first and second gap regions, a temperature compensation layer covering the interdigital transducer, and a floating metal layer buried in the temperature compensation layer or disposed on top of the temperature compensation layer. The floating metal layer includes a plurality of floating metal blocks spaced apart from each other and overlapping at least the first and second edge regions of the interdigital transducer.