SHIBAURA MECHATRONICS CORPORATION

According to one embodiment of the present disclosure, a substrate cleaning apparatus includes a hydrophilization chamber connected to a polishing apparatus and that accommodates a substrate having a polished surface polished by the polishing apparatus; a support provided in the hydrophilization chamber; a liquid supply unit that supplies a cleaning liquid to the polished surface of the substrate to hydrophilize the polished surface; an imaging unit that captures an image of the polished surface supplied with the cleaning liquid; a determination unit that determines whether hydrophilization is achieved on a basis of the image; an adjustment unit that adjusts the supply of the cleaning solution by the liquid supply unit depending on a determination result obtained by the determination unit; and a cleaning chamber connected to the hydrophilization chamber and that cleans the polished surface hydrophilized by the cleaning liquid.

According to one embodiment of the present disclosure, a cleaning apparatus includes a plurality of rollers that rotates a substrate in contact with an outer periphery of the substrate; a rotation mechanism including a motor that rotates the rollers about the rotation shaft; a cover interposed between the rollers and the rotation mechanism to cover the rotation mechanism; an ejection port provided in the cover and that ejects gas between the cover and the rollers; a negative pressure region provided in the cover on a side of the rotation mechanism and having a negative pressure lower than an atmospheric pressure outside the cover through exhaust; a liquid ejector that ejects a cleaning liquid onto the substrate; and a cleaning unit that brings the brush into contact with at least one surface of the substrate that is being rotated, thereby cleaning the surface of the substrate.

A wafer storage container cleaning device according to an embodiment includes a first inspection unit that inspects a grip target portion of a wafer storage container; a cleaning unit that cleans a storage space storing the wafer, in the container; a second inspection unit that inspects the storage space; a robot that conveys the container from the first inspection unit to the cleaning unit and conveys the container from the cleaning unit to the second inspection unit; and a control unit that controls the robot. The control unit controls the robot to convey the container from the first inspection unit to the cleaning unit when the container is determined to be in a usable state, and controls the robot to convey the container from the first inspection unit to a position different from that of the cleaning unit when the container is determined not to be in the usable state.

A substrate processing apparatus includes: a rotational holding unit; a bottom surface ejection nozzle; a bottom surface supply pipe; a heating unit; a flow rate adjustment unit; and a control device. The control device includes a temperature control unit that controls the flow rate adjustment unit to eject the processing liquid to a height that does not reach the bottom surface of the substrate, in a state where the rotational holding unit holds the substrate, thereby increasing a temperature of the bottom surface supply pipe, and a processing control unit that after the temperature of the bottom surface supply pipe is increased, controls the flow rate adjustment unit to eject the processing liquid to a height that reaches the bottom surface of the substrate, thereby performing a processing of the substrate.

According to one embodiment, provided is a processing liquid adjustment apparatus connected to the processing apparatus for a substrate and includes a new liquid supply controller that controls a processing liquid supplier to supply a processing liquid to an adjustment tank, a silica supply controller that controls a silica supplier to supply silica to the processing liquid in the adjustment tank, a heating controller that controls a heating unit to raise the temperature of the processing liquid in the adjustment tank to a first temperature, a temperature maintenance controller that controls the heating unit to maintain the temperature of processing liquid in the adjustment tank to which silica has been supplied at the first temperature, and a cooling controller that controls a cooler to lower the temperature of the processing liquid in the adjustment tank to the second temperature that is lower than the first temperature after the maintenance of the first temperature by the temperature maintenance controller.

A substrate processing apparatus includes: a processing chamber configured to define a space for processing a substrate; a rotary holding part configured to hold and rotate the substrate; a processing liquid supply part configured to supply a processing liquid to the substrate held by the rotary holding part; an exhaust part having an exhaust path for discharging a gas discharged from an interior of the processing chamber to an outside; and a removal part including a nozzle, which is arranged inside the exhaust path and configured to inject a mist-like cleaning liquid.

There is provided, according to one embodiment, a film formation apparatus including: a chamber; a lid body; a target; a film formation room; a conveyance body; a cylindrical part; an inward flange; an outward flange; a lift mechanism; and an evacuator, wherein the lift mechanism elevates the cylindrical part to bring the workpiece holder into contact with a lower edge of the lid body, causes the outward flange to come adjacent to and overlap with the inward flange, and causes the inside of the cylindrical part to communicate with the evacuator via the first through hole from the film formation room to perform vacuum evacuation of a processing space of the film formation room.

A substrate separation apparatus includes: a holding part configured to hold and rotate a bonded substrate formed by bonding a pair of substrates together; a nozzle configured to separate the bonded substrate by injecting a fluid toward an outer periphery of the bonded substrate under rotation; and a nozzle drive part configured to change a direction of injection of the fluid from the nozzle between a first direction which is a direction extending along a tangent to the outer periphery of the bonded substrate and a second direction which is a direction facing a center of the bonded substrate.

A buffer apparatus, a preprocessing apparatus, a mounting apparatus, a preprocessing method and a mounting method that can reduce bonding failure due to time elapsed from preprocessing of an electronic component and a mounting board to a bonding process. The buffer apparatus of the present embodiment includes a storage 161 that stores a component supply body TW that is a workpiece which is a wafer W diced into an electronic component E attached on a tape T attached to a ring R, and a mounting board BW that is a workpiece on which the electronic component E released from the component supply body TW is mounted after surface processing and/or a cleaning process; a chamber 162 that houses the storage 161 ; and a storage adjustment unit 163 that adjusts temperature, humidity, and pressure of gas inside the storage 161 independently from the chamber 162.

According to one embodiment, a substrate processing apparatus includes a rotating table configured to rotate a substrate and a plurality of fixing members configured to fix the substrate on the rotating table by grasping the substrate while abutting an outer periphery of the substrate, wherein each fixing member includes a curved surface on a side that abuts the substrate, a reduced portion formed to be connected to an end of the curved surface and having a width which is continuously reduced in the first direction from a boundary with the curved surface, a first sloping surface formed on a top portion to slope downwards in the first direction, and a support portion formed on the curved surface and configured to support the substrate such that a top surface of the top portion is flush with an upper surface of the substrate in a state where the substrate is grasped.