SK SILTRON CO., LTD.

The present invention provides an ASC process automation device including: a loading part into which an ingot having been subjected to a wire sawing is input; a kerosene cleaning part for cleaning the ingot with kerosene; a precleaning part for precleaning the ingot; a main cleaning part for cleaning the ingot multiple times; a wafer peeling part for peeling the ingot to produce multiple wafers; and a transport unit for moving the ingot linearly and upward/downward while proceeding to the kerosene cleaning part, the precleaning part, the main cleaning part, and the wafer peeling part.

The present invention provides a method for manufacturing a wafer, comprising: a step of rinsing front and backside surfaces of the wafer, a step of securing hydrophobicity of the backside surface of the wafer; a step of improving particles distribution on the backside surface of the wafer, and a step of drying the front and backside surfaces of the wafer.

Disclosed are a wafer edge polishing drum, wafer edge polishing equipment including the same, and a wafer edge polishing method. The wafer edge polishing drum includes a plurality of first polishing units provided at a first body portion, a plurality of second polishing units provided at a second body portion located below the first body portion, a driving unit configured to rotate the first body portion and the second body portion, a plurality of third polishing units provided at least at one of the first body portion or the second body portion, and a controller. Each of the first to third polishing units includes a central shaft, a weight connected to one side of the central shaft, and a polishing portion connected to the opposite side of the central shaft. The controller is configured to adjust a distance between the central shaft and the weight.

A method for analyzing metal contamination of a wafer comprises obtaining a contamination level of a first metal and a contamination level of a second metal for the wafer, obtaining a correction value by substituting the obtained contamination level of the second metal into a correlation equation, and obtaining a final contamination level of the first metal, by correcting the contamination level of the obtained first metal based on the correction value.

A device for evaluating edge defects in a silicon wafer comprises an image acquiring unit configured to acquire image data of an edge region of the silicon wafer, a data preprocessing unit configured to measure an edge region of the silicon wafer using a measurement equipment when an edge defect is detected in the acquired image data to determine a defect attribute of the detected edge defect, and a processor. The processor controls to learn the acquired image data to output a defect attribute corresponding to the detected edge defect, and verifies an accuracy of the output defect attribute of the edge defect based on the determined defect attribute of the edge defect.

Disclosed is a device for separating wafers sheet by sheet from ingot blocks having a plurality of sliced wafers bonded thereto. The wafer separation device includes a water tank configured to receive the ingot blocks and a liquid, a heating member configured to heat the liquid, a barrier rib provided in the water tank to isolate the ingot blocks from each other, an arm configured to separate the wafers sheet by sheet from the ingot blocks, and a sensor configured to sense the barrier rib.

An edge polishing drum for wafers is disclosed. The edge polishing drum includes a body part having a disc shape, and a polishing part extending inclinedly from an edge of the body part toward a first face of the body part. The polishing part includes an inner surface surrounding a polishing area adjacent to the first face of the body part. The inner surface of the polishing part includes a first surface extending from the first face of the body part, and a second surface configured to contact an edge area of a wafer to be polished. The second surface includes a first area having a 2-1th angle with respect to the first face of the body part, and a second area having a 2-2th angle with respect to the first face of the body part. The first area is disposed between the first face of the body part and the second area.

Disclosed is a method of growing a single crystal silicon ingot, including dipping a seed in a silicon melt, and sequentially growing a neck, a shoulder, and a body from the seed by pulling the seed, growing the neck includes growing a first neck part configured to have a cross-sectional area decreased from the seed, and growing a second neck part configured to have a constant cross-sectional area from the first neck part, and, in growing the first neck part, the seed is pulled at a speed equal to or less than 2.0 mm/min.

A wax coating apparatus for wafer mounting of the embodiment includes: a vacuum chuck in which a vacuum flow path providing vacuum pressure is embedded; a heating plate mounted on an upper side of the vacuum chuck and having holes and grooves connected to the vacuum flow path of the vacuum chuck in order to suck a block to which a wafer is adhered; a rotating shaft connected to a lower side of the vacuum chuck; a driving motor for rotating the rotating shaft; and a wax nozzle provided to be spaced apart from the upper side of the vacuum chuck, wherein the heating plate may be operated so as to heat the block while the wax nozzle sprays wax on the block.

Disclosed are a wafer edge polishing drum and wafer edge polishing equipment including the same. The wafer edge polishing drum includes a body part having a disc shape and a polishing part extending from a peripheral portion of a first surface of the body part while being inclined with respect to the first surface of the body part. The polishing part includes an inner surface surrounding a polishing area adjacent to the first surface of the body part. The inner surface of the polishing part includes a first surface extending from the first surface of the body part and a second surface formed so as to be brought into contact with an edge area of a wafer. The second surface of the polishing part has a second angle with respect to the first surface of the body part, and the second angle is variable.