SKY TECH INC.

A bonding machine with horizontal correction function includes a first chamber, a second chamber, a pressing unit, a carrier, a plurality of level adjustment units, and a plurality of distance measuring units. The first chamber is configured to be connected to the second chamber to define an enclosed space therebetween. The pressing unit is disposed within the first chamber, and the carrier is disposed within the second chamber. The pressing unit faces the carrier and is configured to press the substrates placed on the carrier. The leveling units are disposed on the first chamber, and the distance measuring units are disposed on the second chamber. Each distance measuring unit is configured to project a detecting beam onto the pressing unit, to measure the level of the pressing unit so as to adjust the level of the pressing unit through the level adjustment unit.

A UV-assisted and plasma-enhanced process method includes: providing a lower chamber and a reaction space defined therein; providing an upper cover, wherein the upper cover has a window and vent holes; sealing a chamber opening of the lower chamber with the upper cover to form a reaction chamber; providing an outer tube body and an inner tube body disposed in the outer tube body, the outer tube body covering the window and the vent holes, and the inner tube body connected to the window; providing a UV light source at a top end of the inner tube body; providing an induction coil around the outer tube body; inducing a first gas to a first gas chamber in the inner tube body and a second gas to the second gas chamber between the inner and outer tube bodies; and activating the UV light source and the induction coil optionally.

A batch type panel atomic layer deposition apparatus includes a vacuum chamber, a shaft seal device, and a rotary drive assembly. The vacuum chamber includes a front wall, a rear wall, and a peripheral wall. The peripheral wall connects edges of the front wall and the rear wall to form a reaction space therebetween. Concave portions and convex portions are provided on an inner side of the peripheral wall in a staggered configuration. The bottom of each of the concave portions is a planar surface. One end of the shaft seal device is connected to the rear wall. The rotary drive assembly is connected to the other end of the shaft seal device, such that the rotary drive assembly is connected to the vacuum chamber through the shaft seal device to drive the vacuum chamber to rotate about the rotational axis.

A UV-assisted and plasma-enhanced process method includes: providing a lower chamber and a reaction space defined therein; providing an upper cover, wherein the upper cover has a window and vent holes; sealing a chamber opening of the lower chamber with the upper cover to form a reaction chamber; providing an outer tube body and an inner tube body disposed in the outer tube body, the outer tube body covering the window and the vent holes, and the inner tube body connected to the window; providing a UV light source at a top end of the inner tube body; providing an induction coil around the outer tube body; inducing a first gas to a first gas chamber in the inner tube body and a second gas to the second gas chamber between the inner and outer tube bodies; and activating the UV light source and the induction coil optionally.

A bonding method of substrates for bonding a first substrate and a second substrate. The method includes: placing the first substrate on a holding surface of a holder in a confined chamber; evacuating air from the confined chamber to vacuum the confined chamber to a predetermined low pressure value; placing the second substrate on a top of the first substrate; pressing to the second substrate onto the first substrate; and allowing an outside atmosphere air to slowly enter the confined chamber by a first flow coefficient; and allowing the outside atmosphere air to rapidly enter the confined chamber with a second flow coefficient, wherein the second flow coefficient is greater than the first flow coefficient.

A plate cooling device for cooling carrier plate of a wafer, includes a cooling plate and a plurality of contact pads. The cooling plate includes an upper surface; wherein the upper surface is provided with a cooling area for placing the wafer thereon. The contact pads are disposed on the upper surface. The contact pads protrude on the upper surface, and the total area of the contact pads is less than 3% of the area of the carrier plate.

The present invention is a wafer carrier with adjustable aligning devices, which is suitable for a deposition machine. The wafer carrier comprises a tray and a plurality of adjustable aligning devices. The adjustable alignment devices are located around the tray, and include a base and an alignment pin. The adjustable alignment devices are configured to align a clamp ring of the deposition machine. The alignment pin is connected to the tray through the base, wherein the alignment pins and the bases are able to move relative to the tray to adjust the position of the alignment pins. Further, an alignment fixture can be placed on the wafer carrier to position the adjustable alignment devices around the tray, and adjust the alignment pins to preset positions, which is beneficial to improve the accuracy of alignment of the clamp ring.

A wafer holder device having a heating function includes a fixing ring, a holder plate, and a heating plate. The fixing ring surrounds a hollow area, and the fixing ring includes a top and a bottom. The hollow area connects the top and the bottom. The holder plate includes a holding surface and a bottom surface. The holder plate is removably fixed to the top of the fixing ring, and the bottom surface of the holder plate covers the hollow area. A coefficient of thermal expansion of the holder plate is smaller than a coefficient of thermal expansion of the fixing ring. The heating plate is provided within the hollow area for heating the bottom surface of the holder

A wafer holding device configured to fix a and position a wafer having a positioning structure. The wafer holding device includes a base, a holder plate, pushing pins, a linear actuator, and a positioning member. The holder plate is disposed on the base. An upper surface of the holder plate is provided with an adsorption structure for adsorbing and fixing the wafer. The pushing pins are disposed on the upper surface in a protruding manner, and each pushing pin is disposed on the holder plate with respect to a predetermined datum center on the holder plate. The linear actuator is disposed on the base, and an actuating direction of the linear actuator is in parallel to the upper surface. The positioning member is driven by the linear actuator to move in the actuating direction to contact and push against the positioning structure of the wafer.

A holder plate for negative pressure chucking, in which the holder plate is plate body comprising a holding surface and a bottom surface. Air passages are formed inside the holder plate and communicates the holding surface and the bottom surface, and the air passages form a plurality of ventilation openings on the holding surface. A total area of an opening of the ventilation openings in the holding surface is less than 50% of the area of the holder plate and greater than 0.2% of the area of the holder plate. The thermal conductivity of the holder plate is greater than 100 W/mK; wherein W is watts, m is meters, and K is the absolute temperature scale.