TAIYO NIPPON SANSO CORPORATION

A storage for powder material for a metal 3D printer comprising a storage main body having a sealed space inside and capable of placing one or more storage containers for storing powder material for a metal 3D printer in the sealed space, a purge gas supply path for supplying a purge gas made from air to the sealed space, and an oxygen/moisture removal device for removing oxygen and moisture from the air which is located in the purge gas supply path. This storage can provide a storage environment suitable for powder material for a metal 3D printer without being restricted by installation location.

An object of the present invention is to provide a distillation device which can shorten the startup time. The present invention provides a distillation device ( 1 ) including: one or more packed columns (D) that have a regular packing and concentrate a high-boiling point component in a liquid side and a low-boiling point component in a gas side by contact between gas and liquid; one or more evaporators (R) that vaporize at least a part of a descending liquid in the packed column (D) and introduce it into the packed column (D) as an ascending gas; one or more condensers (C) that liquefy at least a part of the ascending gas in the packed column (D) and introduce it into the packed column (D) as a reflux liquid; a liquid supply path (L 5 ) that is located between at least one of the evaporators (R) and an upper part of at least one of the packed columns (D); one or more liquid storage containers (H) that are located in the liquid supply path (L 5 ); and one or more gas supply paths (L 7 ) that are located in a lower part of the packed column (D) to which the liquid supply path (L 5 ) is connected.

One object of the present application is to provide composite copper nanoparticles that have high dispersibility in organic solvents and can be used to form a smooth electrode film. The present invention provides composite copper nanoparticles in which the surfaces of copper nanoparticles are modified with a silane coupling agent, wherein the copper nanoparticles have a coating film containing copper oxide on at least a part of the surface, and wherein the mass carbon concentration derived from the silane coupling agent in the composite copper nanoparticles is 0.1 to 1.2% by mass with respect to the total mass of the composite copper nanoparticles or wherein the number of surface groups derived from the silane coupling agent on the surface of the composite copper nanoparticles is 1.0 to 13.0 per 1 nm 2 of the surface area of the composite copper nanoparticles

The vapor phase growth apparatus of the present invention supplies a raw material gas obtained by transporting vapor of an organometallic raw material by a carrier gas into a reactor. The carrier gas is supplied into a container filled with an organometallic raw material, and the carrier gas transports vapor of the organometallic raw material to produce the raw material gas. In a carrier gas supply line upstream of the container, a heater is provided between a mass flow controller that controls the supply amount of the carrier gas and the container storing the organometallic raw material to heat the carrier gas in the carrier gas supply line. In the case where a raw material gas dilution line that supplies the carrier gas into the raw material gas supply line downstream of the container is provided, a second gas heater that heats the carrier gas in the raw material gas dilution line is further provided downstream of the second mass flow controller that controls the supply amount of the carrier gas in the raw material gas dilution line.

Provided is a bonding material that even in low-temperature bonding at 250° C. or lower, enables bonding with sufficient bonding strength and with low tendency for unevenness between a sinter state of a central section and a sinter state of a pressed edge section at a pressure bonding surface. A sheet-shaped bonding material contains copper particles and a reductant that reduces the copper particles. The copper particles include fine copper particles having a mean particle diameter of 300 nm or less and optionally include coarse copper particles having a mean particle diameter of 3-11 μm. Content of the fine copper particles relative to the total content of the fine copper particles and the coarse copper particles is 50-100 mass %. The reductant is composed of triethanolamine, and content of the triethanolamine is 1.5-10.0 mass % relative to the total content of the fine copper particles and the coarse copper particles.

The object of the present invention is to provide a protein production method capable of producing an active protein with high efficiency even at a low temperature, and a cell-free protein synthesis kit. A protein production method including producing a protein with a reaction solution of a cell-free protein synthesis system containing either one or both of a cold shock protein and a nucleic acid containing a coding region encoding an amino acid sequence of the cold shock protein. A cell-free protein synthesis kit including one or both of a cold shock protein and a nucleic acid containing a coding region encoding an amino acid sequence of the cold shock protein, and a reaction solution of a cell-free protein synthesis system.

One object of the present invention is to provide an apparatus for producing inorganic spheroidized particles which can significantly reduce the amount of warming gas generated and suppress the generation of soot during combustion. The present invention provides an apparatus ( 10 ) for producing inorganic spheroidized particles, including a burner ( 11 ) for producing inorganic spheroidized particles, a vertical spheroidizing furnace ( 15 ), an ammonia supply source ( 12 ), an oxygen supply source ( 13 ), an ammonia supply line (L 1 ) located between the ammonia supply source ( 12 ) and the burner ( 11 ) for producing inorganic spheroidized particles, and an oxygen supply line (L 2 ) located between the oxygen supply source ( 13 ) and the burner ( 11 ) for producing inorganic spheroidized particles.

An object of the present invention is to provide a heat exchanger that can be used in an air separation unit including a low-pressure column, a high-pressure column, and a mixing column, and that can suppress increases in equipment costs. The present invention provides a heat exchanger used in an air separation unit ( 1100 ) including a low-pressure column ( 600 ), a high-pressure column ( 500 ), and a mixing column ( 400 ), wherein the heat exchanger is composed of plates and fins, and wherein a warm gas which is at least a part (at least one of W 1 , W 2 , W 3 ) of a feed air and at least one warm liquid (at least one of W 4 and W 5 ) which is led out from the mixing column ( 400 ) are cooled by at least one cold gas (at least one of C 2 and C 3 ) which is led out from the low-pressure column ( 600 ) and a cold gas (C 1 ) which is led out from the mixing column ( 400 ), and a cold liquid (C 6 ) which is led out from the low-pressure column ( 600 ) through a pressure boosting pump ( 800 ) and supplied to the mixing column ( 400 ) is heated.

An object of the present invention is to provide a dry ice cleaning apparatus for a semiconductor wafer and a method for cleaning a semiconductor wafer that can reduce the amount of particles remaining on the surface of a semiconductor wafer, suppress a decrease of cleaning effects due to ice formation, and continuously and effectively clean a large amount of semiconductor wafers. The present invention provides a dry ice cleaning apparatus for a semiconductor wafer including a cleaning chamber ( 1 ) into which the semiconductor wafers (W) are sequentially carried in and which has an internal space ( 11 ) for cleaning the semiconductor wafers (W), an inject cleaning nozzle ( 5 ) that is disposed in the internal space ( 11 ) of the cleaning chamber ( 1 ) and injects the dry ice (D) toward the cleaning surface of the semiconductor wafer (w), and a transfer robot ( 2 ) that is disposed in the internal space ( 11 ) of the cleaning chamber ( 1 ) and sequentially carries the semiconductor wafers (W) from the outside of the cleaning chamber ( 1 ) into the internal space ( 11 ); and wherein while the transfer robot ( 2 ) holding the semiconductor wafer (W) carried into the internal space ( 11 ) non-horizontally, the inject cleaning nozzle ( 5 ) injects the dry ice (D) onto the semiconductor wafer (W).

The present invention addresses the problem of providing a mixed gas supply device that can safely and stably supply a mixed gas containing a film forming material gas. The present invention provides a mixed gas supply device that supplies a mixed gas containing at least one kind of gas of a film forming material by adjusting the concentration of the film forming material in the mixed gas, comprising: a raw material container ( 2 ) that contains the film forming material; a first beater ( 3 ) that heats the raw material container ( 2 ); a carrier gas-introduction path (L 1 ) that introduces a carrier gas into the raw material container ( 2 ); a mixed gas-lead-out path (L 2 ) that leads the mixed gas out of the raw material container ( 2 ); a second heater ( 6 ) that heats the mixed gas lead-out path (L 2 ); a pressure adjusting device ( 8 ) that is located in the mixed gas lead-out path (L 2 ) and that adjusts the pressure in the raw material container ( 2 ); a mixed gas-measuring device ( 9 ) that is located in the mixed gas lead-out path (L 2 ) on the primary or secondary side of the pressure adjusting device ( 8 ) and that measures the concentration or the flow rate of the mixed gas; and one or more buffer tanks ( 10 ) that are located in the mixed gas lead-out path ( 12 ).