TCL Technology Group Corporation

Disclosed herein are a light-emitting device including a first electrode, a first functional layer, a patterned insulating layer, a patterned second electrode, a patterned second functional layer, and a light-emitting layer, and a methods of manufacturing the same. In the present disclosure, an orthographic projection of the patterned second electrode on the first functional layer is located within an orthographic projection of the patterned insulating layer on the first functional layer, so as to avoid the contact of the patterned second functional layer with the first functional layer, and avoid a current leakage of the light-emitting device.

A method for preparing a quantum dot film, including: in the presence of an inert gas atmosphere, providing a mixed solution system comprising first quantum dots and a fatty acid solution of first ligands, and performing ligand exchange reaction under a first heating condition, to prepare second quantum dots having the first ligands having a structure of Formula 1 attached to surfaces thereof; and depositing the second quantum dots on a substrate to prepare a quantum dot prefabricated film, depositing a mixed solution containing an initiator and a cross-linker on the quantum dot prefabricated film, and heating to crosslink the first ligands on the surfaces of the second quantum dots; or alternatively, adding an initiator and a cross-linker to the second quantum dots, and depositing a resulting mixed system onto a substrate, heating to crosslink the first ligands on the surfaces of the second quantum dots.

The present application provides a preparation method of a charge transport layer, which includes steps of: forming a first film layer by a first solution containing a functional material, forming a second film layer by a second solution containing a charge transport material, the first film layer and the second film layer are in contact with each other, or forming a mixed film layer by a mixed solution of the first solution and the second solution; and removing the functional material to obtain a charge transport layer. The functional material is an organic substance containing an electron-donating group, a surface of the charge transport material has a metal cation dangling bond, and the electron-donating group is capable of being bonded with the metal cation dangling bond.

An electronic device and a manufacturing method thereof. The electronic device includes a quantum dot light-emitting diode and an encapsulation layer encapsulating the quantum dot light-emitting diode. The quantum dot light-emitting diode includes an anode, a cathode, a quantum dot light-emitting layer provided between the anode and the cathode, an electron transport layer provided between the cathode and the quantum dot light-emitting layer, and a zinc carbide layer provided between the cathode and the electron transport layer. The encapsulation layer includes a gas reservoir layer. Arrangement of a zinc carbide layer between an electron transport layer and a cathode can improve transport capability of a carrier, and cooperation of the zinc carbide layer and an encapsulation layer can enhance a positive aging effect and stability of a device, and extend service life of the device.

An electron barrier film for a quantum dot light-emitting diode, the electron barrier film includes: a compound with a general formula R 1 —Si(OR 2 ) 3 ; or a raw material for forming the electron barrier film includes a compound with the general formula R 1 —Si(OR 2 ) 3 one in a group. Not only can a rate of injecting electrons into the luminescent layer be adjusted, so that the number of electron holes in the quantum dot luminescent layer can be equal to the number of electrons in the quantum dot luminescent layer, and a recombination efficiency of the electrons and the electron holes in the luminescent layer is improved, a better interface modification effect can also be achieved, and a surface roughness of the quantum dot luminescent layer is reduced, so that an overall performance of the quantum dot light-emitting diode is more stable.

A preparation method of a light-emitting device includes forming a composite transition layer between a cathode and a quantum dot light-emitting layer and forming an anode on a surface of the quantum dot light-emitting layer away from the cathode. The composite transition layer includes a first transition layer, a second transition layer, and a third transition layer. The first transition layer is arranged on one side close to the cathode and includes a metal halide. The second transition layer is arranged on a surface of the first transition layer away from the cathode and includes a hydrogen halide. The third transition layer is arranged on a surface of the second transition layer away from the first transition layer and includes an ester compound.

Disclosed in the present application are a light-emitting device and a manufacturing method therefor, and a display panel. The manufacturing method for a light-emitting device comprises the following steps: providing a first device plate; coating the first device plate with a metal oxide mixed solution; performing first annealing treatment on the metal oxide mixed solution at a first preset temperature; performing secondary annealing treatment on the metal oxide mixed solution at a second preset temperature; and forming a second device plate on a surface of a second electron transport layer that is away from a first electron transport layer.

A fabrication method for a light-emitting device includes providing a hole functional layer disposed between a quantum dot light-emitting layer and an anode, and providing an electron functional layer disposed between the quantum dot light-emitting layer and a cathode. The hole functional layer includes a mixed material of a hole transport material and a hole injection material. A thickness of the hole functional layer being selected from a thickness range corresponding to ⅓˜⅔ of abscissa between an origin and a first positive trough in a cavity standing wave of the mixed material. The absolute value of a difference between a thickness of the electron functional layer and a thickness corresponding to a first positive crest of a cavity standing wave of an electron functional material is less than or equal to 5 nm.

Disclosed in the disclosure are a light-emitting device and a preparation method therefor. The light-emitting device includes a positive electrode, a hole transport layer, a light-emitting layer, and a negative electrode, which are arranged in a stacked manner.

The disclosure provides a quantum dot and method for preparation thereof, and a light-emitting device. The method for preparation of the quantum dot includes: injecting a precursor solution into a reaction channel of a microfluidic reactor, and reacting at a preset reaction temperature to generate a quantum dot. The precursor solution includes a first solvent and a second solvent. A boiling point of the first solvent is higher than a reaction temperature, and a boiling point of the second solvent is lower than the reaction temperature. Continuous, large-scale synthesis preparation of quantum dot and micron-scale accurate control are achieved.