Trina Solar Co., Ltd.

A conductive paste and a solar cell. The conductive paste includes a conductive powder, a first glass frit, and a second glass frit. The first glass frit includes at least one of lead-containing glass and bismuth-containing glass. A glass transition temperature of the second glass frit is greater than 600° C. In the conductive paste, a weight percentage of the first glass frit ranges from 0.5% to 5%, and a weight percentage of the second glass frit ranges from 0.5% to 10%.

The present application relates to a method for manufacturing a solar cell. In the method, a wafer including a substrate and a doped conducting material layer is provided. A first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting material layer covers the textured structure. A passivating contact material layer is formed on each surface of the wafer. The wafer formed with the passivating contact material layer is cut along the thickness direction of the substrate to form a sub-wafer, so as to form a doped conducting layer. The passivating contact material layer is etched to form a passivating contact layer. A first passivation layer is formed on the doped conducting layer, and further covers at least a portion of a cut edge side surface which is a side surface of the sub-wafer formed by cutting the wafer.

The present disclosure relates to a solar cell, a preparation method thereof, and a photovoltaic module. The solar cell includes a substrate including a first surface, a passivating contact structure disposed on a part of the first surface, and a first electrode disposed on a side of the passivating contact structure away from the substrate and electrically connected to the passivating contact structure. A marking portion is disposed on a part of the passivating contact structure.

The present disclosure relates to a solar cell, a method for manufacturing the same, and a photovoltaic module. A method includes: providing a semiconductor substrate; forming a tunnel layer on a surface of the semiconductor substrate; sequentially forming an undoped initial intrinsic material layer and a doped layer including a dopant on a surface of the tunnel layer; the dopant including either an N-type dopant or a P-type dopant; and performing heat treatment on the initial intrinsic material layer and the doped layer to diffuse the dopant in the doped layer to the initial intrinsic material layer and at least partially crystallize the initial intrinsic material layer, so as to convert the initial intrinsic material layer into a doped passivation layer.

A solar cell includes a semiconducting substrate, a first emitter, an insulating layer, and a second emitter. The semiconducting substrate includes a first surface and a second surface, and includes a first region and a second region. The first region includes a first sub-region and a second sub-region. The first sub-region is in contact with the second region. The first direction is perpendicular to the thickness direction of the semiconducting substrate. The first emitter is disposed on the first surface and in the first region. The insulating layer is disposed on the first emitter and in the first sub-region. The second emitter is disposed on the first surface. The second emitter includes a first sub-emitter and a second sub-emitter. The first sub-emitter is located on the second region. The second sub-emitter is disposed on the insulating layer. Electrical conduction exists between the first emitter and the first sub-emitter.

Provided in the present disclosure are a solar cell sheet and a solar cell string group. The solar cell sheet includes a cell sheet body and a finger structure on a first surface of the cell sheet body, where the first surface of the cell sheet body is divided into a conventional region and a reinforcing region surrounding the conventional region; the finger structure includes at least four first finger lines parallel to each other, and a central segment and edge segments on both sides of the central segment of each first finger line are respectively located in the conventional region and the reinforcing region; and average cross-sectional areas of different positions of each edge segment and the central segment of each first finger line are a first area and a second area respectively; and the first area is greater than the second area.

A method for determining a weather condition, comprising: measuring horizontal irradiance; measuring first slope irradiance and second slope irradiance, a first slope and a second slope being arranged to face the sun and being symmetrical about the meridian plane; determining an azimuth irradiation deviation rate according to the horizontal irradiance, the first slope irradiance, and the second slope irradiance; and determining a weather condition according to the horizontal irradiance, the first slope irradiance, the second slope irradiance, and the azimuth irradiation deviation rate. Also provided is a device for determining a weather condition.

A solar cell structure, a method for preparing a solar cell, and a mask plate. The solar cell structure includes a substrate, a first doped layer, and a plurality of first transparent conductive layers. The first doped layer is disposed on a surface of the substrate. The plurality of first transparent conductive layers are spaced apart from each other and disposed on a surface of the first doped layer away from the substrate. A region to be cut of the solar cell structure is located between two adjacent first transparent conductive layers.

This application provides a heterojunction solar cell and a preparation method. The heterojunction solar cell includes: a silicon substrate being n-type or p-type doped, and having a front surface and a back surface opposite to each other; a first passivation layer and a second passivation layer sequentially located on the front surface of the silicon substrate; a third passivation layer and a fourth passivation layer sequentially located on the back surface of the silicon substrate; a silicon oxycarbide layer located on a surface of the fourth passivation layer away from the silicon substrate, wherein the silicon oxycarbide layer is n-type or p-type doped to form PN junction with the silicon substrate, an atomic percentage of carbon is greater than an atomic percentage of oxygen in the silicon oxycarbide layer. The heterojunction solar cell of the present application improves the performance of the solar cell. The carbon and the oxygen in the silicon oxycarbide layer have a fixed effect on the hydrogen, which is beneficial for reducing the loss of hydrogen.

A solar cell, a preparation method thereof, and a photovoltaic module. The solar cell includes a semiconductor substrate, a first substrate doped layer, a second substrate doped layer, a first passivation layer, and a first doped semiconductor layer. The semiconductor substrate includes a first surface, and the first surface includes a first region and a second region adjacent to the first region along a first direction. The first substrate doped layer is located in the first region. The second substrate doped layer is located in the second region, and the first substrate doped layer is connected to the second substrate doped layer. The first passivation layer is located on a side of the second substrate doped layer away from the semiconductor substrate. The first doped semiconductor layer is located on a side of the first passivation layer away from the semiconductor substrate.