VISERA TECHNOLOGIES COMPANY LTD.

An image sensor includes a first unit. The first unit includes a first photodiode having a first dimension, a second photodiode disposed adjacent the first photodiode and having a second dimension that is greater than the first dimension, a first color filter overlapping the first photodiode and the second photodiode, and a first internal reflector disposed in the first color filter and overlapping the first photodiode. The first internal reflector has an inclined light receiving surface inclined from a top surface of the first color filter toward the second photodiode, and a refraction index of the first internal reflector is smaller than a refraction index of the first color filter.

An image sensor includes a first quad phase detection (QPD) unit. The first QPD unit includes four photodiodes arranged in a matrix of two rows and two columns, a deep trench isolation structure including an outer wall surrounding the matrix of the photodiodes and an inner wall separating the photodiodes, a grid disposed on the deep trench isolation structure, a color filter disposed on the photodiodes and filled in the grid, and an optical component disposed on the color filter. The optical component includes a ring-type lens and a center lens surrounded by the ring-type lens, in which the ring-type lens has portions overlapping the outer wall of the deep trench isolation structure.

A manufacturing method includes the following operations. A lens layer is formed above a substrate. A patterned hard mask layer is formed on the lens layer. The lens layer is etched to transfer a pattern of the patterned hard mask layer to the lens layer such that a plurality of lenses are defined, wherein the lens are micro-lenses or meta-surface lenses. A cladding layer is formed to cover the plurality of lenses and the substrate. Portions of the cladding layer are etched to form a first inclined sidewall and a second inclined sidewall, wherein the first inclined sidewall is above the second inclined sidewall, wherein a projection of the first inclined sidewall on the substrate is spaced apart from a projection of the second inclined sidewall on the substrate.

The present disclosure provides an imaging device. The imaging device includes a substrate and an array of pixels. The substrate has an isolation region. The array of pixels includes a plurality of sensing pixels and a plurality of phase detection auto focus (PDAF) pixels, in which each of the PDAF pixels includes four photoelectric conversion elements, a color filter layer, and a deflection element. The four photoelectric conversion elements are in the substrate and separated by the isolation region of the substrate. The color filter layer is on the four photoelectric conversion elements. The deflection element is inside the color filter layer and partially over the isolation region of the substrate, in which a refractive index of the deflection element is larger than a refractive index of the color filter layer.

This disclosure provides a demosaicing device and a demosaicing method for image sensor. The method includes capturing a panchromatic image by using a pixel array including switchable pixels and clear pixels, where the panchromatic image is captured when the switchable pixels and the clear pixels are under a clear state. The method includes capturing a chromic image by using the pixel array when the switchable pixels are under a color state and the clear pixels are under the clear state. The method includes performing a weighted average calculation and a signal subtraction on the chromic image and the panchromatic image to generate first resolution chromic images. A resolution of the first resolution chromic images is the same as a resolution of the panchromatic image and the chromic image. The method includes fusing the first resolution chromic images with the panchromatic image to generate demosaiced chromic images.

The present disclosure provides an image sensor and control method thereof. The image sensor includes a first transparent conductive layer, a second conductive layer, an optical sensor and a semiconductor substrate. The optical sensor is arranged between the first transparent conductive layer and the second conductive layer, and includes a photoelectric conversion layer, wherein the photoelectric conversion layer has a thickness ranging from 500 to 10000 nm, and the optical sensor has a plurality of absorption spectrum ranges. The semiconductor substrate is below the second conductive layer.

The present disclosure provides a color filter array. The color filter array includes at least one minimal repeating unit, wherein the at least one minimal repeating unit includes a first filter set and a second filter set. The first filter set includes a first color filter having a first spectrum, two second color filters having a second spectrum and a third color filter having a third spectrum. The second filter set includes a fourth color filter having the first spectrum, two fifth color filters having the second spectrum, a sixth color filter having the third spectrum and a plurality of broadband filters. The second filter set is arranged to form a quadrilateral annulus, and the first filter set is positioned in an interior of the quadrilateral annulus. The present disclosure also provides a demosaicing method for an image captured via the color filter array.

An image sensor includes a first color filter disposed on a first photodiode, a first grid, and a first micro lens disposed on the first color filter and the first grid. The first grid includes a first main portion and a first shielding portion extended from the first main portion. The first main portion surrounds the first color filter and the first shielding portion partially covers the first color filter such that a first cavity defined by the first shielding portion is configured over the first color filter. The first color filter or the first micro lens includes a first protruding portion filled in the first cavity, and a width of the first protruding portion is in a range from 0.1 pixel size to 0.8 pixel size. A manufacturing method of an image sensor is also disclosed.

An image sensor includes a first unit. The first unit includes a first photodiode having a first dimension, a second photodiode disposed adjacent the first photodiode and having a second dimension that is greater than the first dimension, a first color filter overlapping the first photodiode and the second photodiode, and a first internal reflector disposed in the first color filter and overlapping the first photodiode. The first internal reflector has an inclined light receiving surface inclined from a top surface of the first color filter toward the second photodiode, and a refraction index of the first internal reflector is smaller than a refraction index of the first color filter.

The present disclosure provides an image sensor including a photodiode, a micro lens above the photodiode, a color filter between the photodiode and the micro lens, and a polyhedron lens film above the micro lens. The polyhedron lens film includes a plurality of polyhedron lens units protruding away from the photodiode, in which a plurality of orthogonal projections of the plurality of the polyhedron lens units are within an orthogonal projection of the photodiode. Each of the polyhedron lens units includes a bottom facet facing the photodiode, a top facet opposite to the bottom facet, and at least one side facet connecting the top facet and the bottom facet.