XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.

A filtration apparatus is provided. The filtration apparatus includes a housing and a plurality of filtering sheets. The housing is enclosed by a first end cap and a second end cap. The first end cap includes a liquid inlet, and the second end cap includes a liquid outlet. The plurality of filtering sheets is disposed on an internal sidewall of the housing. A portion of the filtering sheets interlaces with another portion of the filtering sheets to form a winding flow path in the housing.

The present disclosure provides an exhaust module for exhausting an exhaust from at least one wafer baking apparatus having an exhaust port. The exhaust module includes at least one pipeline, a heating unit, a solvent dispensing unit, and a filtering unit. The at least one pipeline is connected to the exhaust port of the wafer baking apparatus and configured to exhaust the exhaust gas from the wafer baking apparatus. The heating unit is connected to the pipeline and configured to heat the exhaust gas. The solvent dispensing unit is connected to the heating unit and configured to dispense a solvent to cool and dissolve the exhaust gas. The filtering unit is connected to the solvent dispensing unit and configured to filter the solvent.

A method for fabricating a semiconductor device, including the steps of: providing a substrate having an etch stop layer formed thereon; forming a preliminary stacked structure on the etch stop layer, the preliminary stacked structure including a lower sacrifice layer contacting the etch stop layer, a support layer, and an upper sacrifice layer; forming a hole penetrating the preliminary stacked structure and the etch stop layer; forming a conductive pattern in the hole; removing the upper sacrifice layer and a portion of the support layer; removing the lower sacrifice layer; forming a first conductive layer covering the conductive pattern; and forming a dielectric layer covering the first conductive layer, a remaining portion of the support layer, and the etch stop layer.

A fluid preparation system includes a tank, a chemical supply line, a mixer, and a deionized (DI) water supply line. The tank contains a first chemical solution. The chemical supply line is coupled to the tank and configured to supply the first chemical solution. The mixer is coupled to the tank. The DI water supply line is coupled to the mixer and configured to supply DI water. The first chemicals solution and the DI water are mixed at the mixer to generate a second chemical solution.

The present disclosure provides a retaining ring for polishing a wafer by a slurry. The retaining ring includes a ring-shaped main body and a plurality of guiding elements. The main body has an outer surface, an inner surface, and an inner space for accommodating the wafer. The main body includes a plurality of channels configured to allow the slurry to flow into the inner space from the outer surface. The plurality of guiding elements is disposed at the outer surface of the main body with respect to the plurality of channels. Each of the guiding elements forms a slurry capture area with the main body to guide the slurry towards each of the respective channels.

The present disclosure provides a composition for manufacturing a polyurethane polishing pad. The composition includes 15 to 25 wt % of MBCA, 25 to 45 wt % of isocyanates, 15 to 45 wt % of polyols, 5 to 35 wt % of EOPO, and 1 to 5 wt % of additives. The polyurethane polishing pad made from the composition of the present disclosure has a hardness within a range of 40 to 70 shore D, an elongation within a range of 200 to 400%, a density within a range of 0.7 to 0.9 g/cc, a modulus within a range of 25000 to 40000 kg/cm 2 , and a tensile stress within a range of 120 to 320 kg/cm 2 .

A device for maintaining cleanliness in a vacuum environment during semiconductor manufacture in a device storing and transferring wafers into etching and other manufacturing processes includes a transferring chamber storing wafers, a vacuum system to extract particles from the transferring chamber, and a thermoelectric device for temperature control. The vacuum system includes an extracting pipe, the thermoelectric device includes a cooling apparatus to cool the transferring chamber, and a monitoring device to detect particle concentrations in the transferring chamber. The cooling apparatus includes Peltier elements arranged on the extracting pipe to cool and thus cause the descent of fumes and particles towards a low-set extraction area.

A stocker for holding a plurality of reticle pods is provided. Each of the reticle pods is configured to accommodate a reticle assembly. The reticle assembly includes a reticle and a pellicle covering the reticle. The stocker includes a main frame and an electrostatic generator. The main frame has an inner space and at least one pod support disposed in the inner space. The pod support divides the inner space into a plurality of chambers configured to respectively accommodate the plurality of reticle pods. The electrostatic generator is coupled to the reticle assembly and configured to generate static electricity to the reticle assembly. The static electricity alternates between positive electricity and negative electricity.

A semiconductor structure and a method of fabricating the same is disclosed. The semiconductor device includes a conductive structure that comprises: an upper conductive line arranged above and in electrical connection with a circuit component in a lower device layer through a via plug, wherein the upper conductive line extends laterally over the via plug; an interposing layer having a substantially uniform thickness arranged between the via plug and the upper conductive line, and extending laterally beyond a planar projection of the via plug, wherein the upper conductive line is in electrical connection with the via plug through the interposing layer; and an overlayer is disposed over the upper conductive line.

A method for fabricating a semiconductor device, including the steps of: providing a substrate having an etch stop layer formed thereon; forming a preliminary stacked structure on the etch stop layer, the preliminary stacked structure including a lower sacrifice layer contacting the etch stop layer, a support layer, and an upper sacrifice layer; forming a hole penetrating the preliminary stacked structure and the etch stop layer; forming a conductive pattern in the hole; removing the upper sacrifice layer and a portion of the support layer; removing the lower sacrifice layer; forming a first conductive layer covering the conductive pattern; and forming a dielectric layer covering the first conductive layer, a remaining portion of the support layer, and the etch stop layer.