ACM RESEARCH (SHANGHAI), INC.

The present invention discloses a drying apparatus and method for drying a substrate using supercritical fluid. The drying apparatus comprises an upper chamber, a lower chamber, a substrate tray, a lifting mechanism, a connecting assembly and a locking mechanism. The lower chamber is disposed below the upper chamber. The substrate tray is disposed on the lower chamber and is used for carrying the substrate. The lifting mechanism is disposed below the lower chamber and is used for driving the lower chamber to move in the vertical direction, so that the lower chamber is completely contacted with the upper chamber. The connecting assembly is connected to the upper chamber and the lower chamber. The locking mechanism is used to lock or loosen the connecting assembly when the lower chamber is in full contact with the upper chamber. After the locking mechanism locks the connecting assembly and the lifting mechanism withdraws from the lower chamber, the locking mechanism and the connecting assembly automatically contact due to the action of gravity of the chamber, and the upper chamber and the lower chamber are closed to form a sealed chamber. The present invention has the advantage of enhancing the pressure resistance of the sealed chamber.

A substrate processing apparatus comprises a processing chamber and a gas supply portion configured in an upper portion of the processing chamber, for supplying the processing gas into the processing chamber. A plurality of substrate holding portions are configured in the processing chamber and located below the gas supply portion, for holding substrates. An exhaust portion is configured in a lower portion of the processing chamber, for exhausting gas from the processing chamber. The exhaust portion comprises a plurality of exhaust grooves, a plurality of exhaust flow channels and a shared main exhaust port. Each exhaust groove is configured with a substrate holding portion and two exhaust flow channels, to connect the exhaust groove to the main exhaust port. Wherein, the main exhaust port is located at a geometric center of a plurality of substrate holding portions, and the plurality of exhaust flow channels have the same exhaust volume.

The invention relates to an equipment for semiconductor production, in particular to a heat treatment apparatus. The apparatus comprises a cooling unit ( 200 ), a heating unit ( 300 ) and a transmission unit ( 400 ). The cooling unit ( 200 ) comprises a cooling plate ( 210 ) for cooling a substrate (w), and the heating unit ( 300 ) comprises a heating plate ( 310 ) for heating the substrate (w). The transmission unit ( 400 ) comprises a transmission arm ( 410 ), a lifting module and a linear module. The transmission arm ( 410 ) supports the substrate (w) and transmits the substrate (w) between the cooling unit ( 200 ) and the heating unit ( 300 ). The transmission arm ( 410 ) is disposed on the lifting module, and the lifting module drives the transmission arm ( 410 ) to ascend and descend. The linear module drives the transmission arm ( 410 ) to transmit the substrate (w) between the cooling plate ( 210 ) and the heating plate ( 310 ). The internal space of the apparatus is optimized.

Disclosed in an embodiment of the present invention is a substrate processing apparatus, comprising a processing chamber, a liquid supply tank and a recovery tank. A first pipeline connects a first liquid inlet and a liquid outlet of the liquid supply tank. A second pipeline connects the first pipeline and a liquid inlet of the processing chamber. A third pipeline connects the first pipeline and a first liquid inlet of the recovery tank. A fourth pipeline connects a liquid outlet of the processing chamber and a second liquid inlet of the recovery tank. A fifth pipeline connects a liquid outlet of the recovery tank and a second liquid inlet of the liquid supply tank.

A gas supply apparatus and a substrate processing apparatus including the same are provided. The gas supply apparatus supplies a plurality groups of process gas to a substrate processing apparatus of which a plurality of wafers are placed in the inside. The gas supply apparatus includes a plurality of process gas supply units configured to supply the plurality groups of process gas; a process gas temporary reservoir including an inner space partitioned into a plurality of gas storage spaces isolated from each other, each of which configured to store one group of process gas supplied from one process gas supply unit and simultaneously supply the one group of process gas to the plurality of wafers.

A wafer centering adjustment method, comprising: before a wafer ( 4 ) is etched, a wafer centering system ( 1 ) confirms whether the center of the wafer ( 4 ) coincides with the center of the first adsorption platform ( 3 ), and if not, the wafer centering system ( 1 ) corrects the position of the wafer ( 4 ). After the etching of the wafer ( 4 ) is completed, a wafer edge cleaning effect detection system ( 2 ) confirms whether the center of the wafer ( 4 ) coincides with the center of the first adsorption platform ( 3 ) during the process of etching, and obtains the second offset data. The wafer edge cleaning effect detection system ( 2 ) feeds back the second offset data to the wafer centering system ( 1 ). Before etching the next wafer, the wafer centering system ( 1 ) obtains the first offset data and preforms correction firstly, and then makes a secondary correction to the position of the wafer according to the second offset data obtained after the previous wafer is etched, thereby realizing a closed-loop control of the centering adjustment apparatus. In addition, the degree of coincidence between the center of the wafer and the center of the first adsorption platform is greatly improved by means of the secondary correction, thereby effectively guaranteeing the uniformity of the edge etching width of the wafer.

The present invention discloses a plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode; step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value P 11 and continue with a period T 11 ; step 3: when the period Tn ends, adjusting the first plating power supply applied on the first anode to output a power value P 12 and continue with a period T 12 , at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value P 21 and continue with a period T 21 ; and step 4: when the period T 21 ends, adjusting the second plating power supply applied on the second anode to output a power value P 22 and continue with a period T 22 , wherein step 2 to step 4 are performed periodically.

Embodiments of the present invention provide a method for removing a barrier layer of a metal interconnection on a wafer, which remove a single-layer metal ruthenium barrier layer. A method comprises: oxidizing step, is to oxidize the single-layer metal ruthenium barrier layer into a ruthenium oxide layer by electrochemical anodic oxidation process; oxide layer etching step, is to etch the ruthenium oxide layer with etching liquid to remove the ruthenium oxide layer. The present invention also provides a method for removing a barrier layer of a metal interconnection on a wafer, using in a structure of a process node of 10 nm and below, wherein the structure comprises a substrate, a dielectric layer, a barrier layer and a metal layer, the dielectric layer is deposited on the substrate and recessed areas are formed on the dielectric layer, the barrier layer is deposited on the dielectric layer, the metal layer is deposited on the barrier layer, wherein the metal layer is a copper layer, the barrier layer is a single-layer metal ruthenium layer, and the method comprises: thinning step, is to thin the metal layer; removing step, is to remove the metal layer; oxidizing step, is to oxidize the barrier layer, and the oxidizing step uses an electrochemical anodic oxidation process; oxide layer etching step, is to etch the oxidized barrier layer.

A wafer cleaning apparatus provided by the present invention comprises a rotary shaft, a chuck arranged on the top of the rotary shaft for retaining the wafer, a fixed shaft coaxially passed through the rotary shaft, and an upper end cover and a lower end cover that block the top and bottom of the fixed shaft respectively. Wherein, the fixed shaft is a hollow shaft with at least one circle of exhaust holes provided on the wall of the fixed shaft. The lower end cover is arranged with a gas inlet port, through which a protective gas is provided to the interior of the fixed shaft. The protective gas forms a positive pressure in the annular space between the fixed shaft and the rotary shaft through the at least one circle of exhaust holes. The present invention provides positive pressure protective gas to the spacing between the fixed shaft and the rotary shaft by opening exhaust holes on the wall of the fixed shaft. A gas seal is formed to prevent contaminants, such as particles and metals, generated in the bottom area of the rotary shaft from diffusing to the back side of the wafer through the annular space between the fixed shaft and the rotary shaft, thereby improving the cleanliness of the back side of the wafer after cleaning.

Disclosed is a wafer backside cleaning method, comprising: using a wafer clamping part to hold a wafer, a gap being formed between the wafer clamping part and the wafer; injecting a protective gas into the gap at a first flow rate; adjusting the flow rate of the protective gas from the first flow rate to a second flow rate, and rotating the wafer under the drive of the first rotational speed of the wafer clamping part to clean the backside of the wafer; adjusting the rotational speed of the wafer clamping part from the first rotational speed to a second rotational speed, so that the wafer is driven by the wafer clamping part to rotate for the drying process; stopping rotating the wafer, adjusting the flow rate of the protective gas to the first flow rate again from the second flow rate, and then taking out the wafer; and stopping injecting the protective gas after the wafer is taken out. According to the present invention, adjusting the switching logic and flow rate of the protective gas can ensure that the front side of the wafer is not prone to adsorption of external impurities during a wafer backside cleaning process, thereby improving the wafer backside cleaning stability.