ACM RESEARCH (SHANGHAI), INC.

The present invention discloses a plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode; step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value P 11 and continue with a period T 11 ; step 3: when the period T 11 ends, adjusting the first plating power supply applied on the first anode to output a power value P 12 and continue with a period T 12 , at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value P 21 and continue with a period T 21 ; and step 4: when the period T 21 ends, adjusting the second plating power supply applied on the second anode to output a power value P 22 and continue with a period T 22 ; wherein step 2 to step 4 are performed periodically.

A plating apparatus for depositing metal on a substrate, comprising a membrane frame ( 14 ), a catholyte inlet pipe ( 30 ) and a center cap ( 40 ). The membrane frame ( 14 ) has a center passage ( 144 ) which passes through the center of the membrane frame ( 14 ). The catholyte inlet pipe ( 30 ) is connected to the center passage ( 144 ) of the membrane frame ( 14 ). The center cap ( 40 ) is fixed at the center of the membrane frame ( 14 ) and covers over the center passage ( 144 ) of the membrane frame ( 14 ). The top of the center cap ( 40 ) has a plurality of first holes ( 42 ). The catholyte inlet pipe ( 30 ) supplies catholyte to the center cap ( 40 ) through the center passage ( 144 ) of the membrane frame ( 14 ), and the catholyte is supplied to a center area of the substrate through the first holes ( 42 ) of the center cap ( 40 ).

The present invention provides a substrate heat treatment apparatus for heat treating a substrate, including a bake plate, support components, a baffle plate, and a driving device. The bake plate defines at least one gas passage. The support components support the substrate. The baffle plate is fixed on a top surface of the bake plate. The baffle plate surrounds the substrate and a gap is formed between an inner circumferential wall of the baffle plate and the substrate. A driving device drives the plurality of support components to move up or down. When heat treating the substrate, a hot gas is supplied to the space between the substrate and the top surface of the bake plate through the gas passage of the bake plate, and the hot gas flows out through the gap formed between the inner circumferential wall of the baffle plate and the substrate.

The present invention discloses plating apparatuses and plating methods for metal deposition on a substrate with pattern structures. In an embodiment, a plating apparatus comprises a plating bath configured to accommodate electrolyte, a substrate holding module configured to hold a substrate, and at least one driving device configured to drive the substrate holding module together with the substrate to horizontally vibrate and/or vertically vibrate during the substrate being immersed into the electrolyte to be plated. The present invention can enhance mass transfer during the substrate being plated by vibrating the substrate holding module so as to raise plating rate and uniformly plating on the pattern structures.

A plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode ( 3001 ); step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value P 11 and continue with a period T 11 ( 3002 ); step 3: when the period T 11 ends, adjusting the first plating power supply applied on the first anode to output a power value P 12 and continue with a period T 12 , at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value P 21 and continue with a period T 21 ( 3003 ); and step 4: when the period T 21 ends, adjusting the second plating power supply applied on the second anode to output a power value P 22 and continue with a period T 22 ; wherein step 2 to step 4 are performed periodically.

Methods and an apparatus for removing particles or photoresist on substrates. In an embodiment, a method comprises the following steps: transferring one or more substrates into a DIO 3 solution accommodated in a DIO 3 bath; after the one or more substrates are processed in the DIO 3 bath, taking the one or more substrates out from the DIO 3 bath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath; after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates; and transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process. The method combines DIO 3 and SPM in one cleaning sequence, which can remove particles or photoresist, especially remove photoresist treated by medium dose or high dose of ion implantation.

The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

A plating chuck for holding a substrate during plating processes, wherein the substrate has a notch area ( 3031 ) and a patterned region ( 3032 ) adjacent to the notch area ( 3031 ). The plating chuck comprises a cover plate ( 3033 ) configured to cover the notch area ( 3031 ) of the substrate to shield the electric field at the notch area ( 3031 ) when the substrate is being plated.

A plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode ( 3001 ); step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value P 11 and continue with a period T 11 ( 3002 ); step 3: when the period T 11 ends, adjusting the first plating power supply applied on the first anode to output a power value P 12 and continue with a period T 12 , at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value P 21 and continue with a period T 21 ( 3003 ); and step 4: when the period T 21 ends, adjusting the second plating power supply applied on the second anode to output a power value P 22 and continue with a period T 22 ; wherein step 2 to step 4 are performed periodically.

Embodiments of the present invention provide an electroplating apparatus for electroplating on a surface of a wafer, the electroplating apparatus comprising a plurality of electrodes, the plurality of electrodes forming electric fields on the surface of the wafer, wherein an independent electric field is formed in a designated area, the intensity of the independent electric field is independently controlled, when a notch of the wafer is positioned within the designated area, a total amount of power received by the notch within the designated area is reduced. Embodiments of the present invention also provide an electroplating method for electroplating on a surface of a wafer by using a plurality of electrodes, the method controlling the plurality of electrodes to form electric fields on the surface of the wafer, wherein an independent electric field is formed in a designated area, the intensity of the independent electric field is independently controlled, when a notch of the wafer is positioned within the designated area, a total amount of power received by the notch within the designated area is reduced. The electroplating apparatus and the electroplating method of the present invention control the electroplating height of the notch of the wafer by directly controlling the intensity of the electric field. Compared with a conventional control method which only changing the rotation speed of the wafer, the present invention is more accurate and reliable, the electroplating efficiency is also increased.