ASML Holding N.V.

An apparatus comprising: a radiation receiving apparatus provided with an opening operable to receive radiation from a radiation source through the opening; wherein the radiation receiving apparatus comprises a deflection apparatus arranged to change a trajectory of a particle through the opening arriving at the radiation receiving apparatus.

A metrology system includes a beam splitter and first and second sensors. The beam splitter splits scattered radiation scattered by a target into first and second portions of radiation. The first sensor receives the first portion. The second sensor receives the second portion after the second portion propagates along a path that includes a wedge system comprising a first wedge configured to diverge the second portion.

A cleaning tool configured to be inserted into a lithography apparatus in a first configuration, configured to be engaged by a handler of the lithography apparatus, and used for cleaning a portion of the lithography apparatus. The cleaning tool is configured to move from the first configuration to a second, expanded configuration, after engagement by the handler such that the cleaning tool is in the second configuration when used for cleaning the portion of the lithography apparatus. There may also be a container configured to hold the cleaning tool in the first configuration and fit into the lithography apparatus. In that case, the cleaning tool is configured to be inserted into the lithography apparatus in the container, moved from the container by the handler for the cleaning, and returned to the container by the handler after the cleaning.

A substrate holder, for a lithographic apparatus, having a main body, a plurality of support elements to support a substrate and a seal unit. The seal unit may include a first seal positioned outward of and surrounding the plurality of support elements. A position of a substrate contact region of an upper surface of the first seal may be arranged at a distance from the plurality of support elements sufficient enough such that during the loading/unloading of the substrate, a force applied to the first seal by the substrate is greater than a force applied to the plurality of support elements by the substrate. A profile of the contact region, in a cross section through the seal, may have a shape which is configured such that during the loading/unloading of the substrate, the substrate contacts the seal via at least two different points of the profile.

A metrology tool that includes a substrate table to hold a substrate; a projection system configured to project a beam on a target portion of the substrate; an actuator configured to adjust a position of the projection system relative to the substrate on the substrate table; a sensor configured to determine a position of the substrate table; and a one or more processors configured to: determine, based on the position of the substrate table, a position error of the substrate table with respect to a reference; and control, via the actuator, a position of the projection system to compensate for the position error of the substrate table so that the beam projects on the target portion of the substrate.

A self-referencing interferometer (SRI) system for an alignment sensor apparatus includes a first prism and a second prism. The first prism has an input surface for an incident beam. The second prism is coupled to the first prism and has an output surface for a recombined beam. The recombined beam includes a first image and a second image rotated by 180 degrees with respect to the first image. The first and second prisms are identical in shape. A dual self-referencing interferometer (DSRI) system for an alignment sensor apparatus includes a first prism assembly having an input surface for a first incident beam and a second incident beam, and a second prism assembly coupled to the first prism assembly and having an output surface for a first recombined beam and a second recombined beam. The first and second prism assemblies are identical in shape.

An inspection system, a lithographic apparatus, and a method are provided. The inspection system includes an illumination system, an optical system, a shutter system, an objective system and a detector. The illumination system is configured to generate an illumination beam. The optical system is configured to split the illumination beam into a first sub-beam and a second sub-beam. The shutter system is configured to independently control a transmittance of the first sub-beam and the second subbeam. The objective system is configured to receive the first sub-beam and the second beam from the optical system and direct the first sub-beam and the second sub-beam towards a substrate having a target structure. The detector is configured to receive an image or a diffracted image of the target structure.

A cleaning tool configured to be inserted into a lithography apparatus in a first configuration, configured to be engaged by a handler of the lithography apparatus, and used for cleaning a portion of the lithography apparatus. The cleaning tool is configured to move from the first configuration to a second, expanded configuration, after engagement by the handler such that the cleaning tool is in the second configuration when used for cleaning the portion of the lithography apparatus. There may also be a container configured to hold the cleaning tool in the first configuration and fit into the lithography apparatus. In that case, the cleaning tool is configured to be inserted into the lithography apparatus in the container, moved from the container by the handler for the cleaning, and returned to the container by the handler after the cleaning.

Systems, apparatuses, and methods are provided for determining the alignment of a substrate. An example method can include emitting a multi-wavelength radiation beam including a first wavelength and a second wavelength toward a region of a surface of a substrate. The example method can further include measuring a first diffracted radiation beam indicative of first order diffraction at the first wavelength in response to an irradiation of the region by the multi-wavelength radiation beam. The example method can further include measuring a second diffracted radiation beam indicative of first order diffraction at the second wavelength in response to the irradiation of the region by the multi-wavelength radiation beam. Subsequently, the example method can include generating, based on the measured first set of photons and the measured second set of photons, an electronic signal for use in determining an alignment position of the substrate.

Embodiments herein describe methods, devices, and systems for a reticle gripper damper and isolation system for handling reticles and reducing vibrations in a reticle handler for lithography apparatuses and systems. A reticle handler apparatus includes a reticle handler arm, a reticle baseplate configured to hold the reticle, and a gripper arranged to connect the reticle baseplate to the reticle handler arm. The gripper includes a static structure that is coupled to the reticle handler arm, an isolation structure that is coupled to the static structure, and one or more damping elements. The gripper is configured to reduce vibrations of the reticle in the reticle handler apparatus using the one or more damping elements.