BRILLNICS SINGAPORE PTE. LTD.

Provided are a solid-state imaging device, a method for driving a solid-state imaging device and an electronic apparatus. A reading part controls an output node, a first storage node and a second storage node such that the output node, the first storage node and the second storage node are coupled with each other to perform reading of an overflow charge signal, and controls the output node and the second storage node such that the output node and the second storage node are separated from each other to perform reading of a stored charge signal. A sequence of operations to read the pixel signal is performed such that the reading of the overflow charge signal takes place prior to the reading of the stored charge signal without charge mixing at the output node.

In a pixel signal processing part, a first input switch and an output switch are turned on and off in phase. When the first input switch and the output switch are ON and the second input switch is OFF, a first auto-zero switch and a second auto-zero switch are kept in the ON state to connect the second node to the reference potential (GND), so that a sampling capacitor, a feedback capacitor, and an auto-zero capacitor are operated in respective operation ranges of the capacitors, and the feedback capacitor is kept constant according to a difference of the input pixel signals, thereby making the output of the amplifier in linear response to the input signal.

Provided are a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus that are capable of selecting a pixel operating mode between a RS mode and a GS mode and switching a conversion gain read-out mode, where signals produced with different conversion gains are read, among several options depending on a scene. As a result, the solid-state imaging device, the method for driving the solid-state imaging device and the electronic apparatus can minimize a drop in SNR at the conjunction point between a HCG signal and a LCG signal and also achieve high full well capacity and little dark noise. In a solid-state imaging device, a pixel part includes pixels arranged in a matrix pattern, and each pixel includes a photoelectric conversion reading part. The solid-state imaging device is capable of performing rolling shutter (RS) and global shutter (GS).

A pixel circuit 200 includes a readable pixel 210 , a comparator 220 , and a selector counter circuit 230 . The readable pixel 210 performs photoelectric conversion at a photodiode PD 11 and produces a readable signal corresponding to an illuminance condition of incident light. The readable pixel 210 includes an overflow path extending to a floating diffusion FD 11 . The comparator 220 compares a voltage signal (SFout) read out from the readable pixel 210 against a reference signal Vref and outputs a comparison result signal Vout indicating the result of the comparison. The selector counter circuit 230 includes a selector circuit for selecting an external clock or the output Vout from the comparator and a counter circuit for counting the output from the selector circuit.

A solid-state imaging device includes: an output buffer part adapted to convert charge at an output node into a voltage signal corresponding to the amount of the charge, and output an active comparison result signal when the voltage signal and a first reference signal are the same level; an output buffer part adapted to convert the charge at the output node into a voltage signal corresponding to the amount of the charge, compare the voltage signal with the first reference signal, and output the active comparison result signal when the voltage signal and the first reference signal are the same level; the holding signal readout part disposed between the input node of the signal holding part and the feeding line of the second reference signal, conduction or non-conduction of the holding signal readout part being controlled depending on the comparison result signal outputted by the output buffer part.

Provided are a solid-state imaging device, a method for driving a solid-state imaging device and an electronic apparatus that are capable of achieving reduced noise at a voltage sample-and-hold node without requiring an increase in capacitance of a signal holding capacitor for sampling and holding voltage. A solid-state imaging device includes: a photoelectric conversion reading part; an amplifier circuit; a signal holding part including a sample-and-hold signal holding capacitor for holding the read-out voltage signal amplified by the amplifier circuit and outputting the held voltage signal; a first in-pixel signal line to which a low-gain read-out voltage signal is output; and a second in-pixel signal line connected to the output side of the amplifier circuit and to which a high-gain read-out voltage signal is output. A second differential transistor of a differential transistor pair of the amplifier circuit also serves as a source follower transistor.

Some embodiments relate to an imaging system including an active pixel a comparator, a write control circuit, and an analog-to-digital conversion (ADC) memory. The active pixel may include a photodiode and a plurality of transistors. The comparator may be operative coupled to the active pixel and configured to receive an output of the active pixel. The write control circuit may be operative coupled to the comparator and configured to receive an output from the comparator. The ADC memory may be operatively coupled to the write control circuit. A data structure may be stored in the ADC memory, and may be configured to store at least a first data string, which may include a set of flag bits for identifying each ADC operation performed and a set of ADC data bits.

Some embodiments relate to an imaging system including an active pixel and an analog-to-digital conversion (ADC) circuit including comparator. The comparator may be operatively coupled to the active pixel and configured to receive an output of the active pixel. The back-end ADC and memory circuit may be operatively coupled to the active pixel. The back-end ADC and memory circuit may include a write control circuit, an ADC memory operatively coupled to a read/write data bus and to the write control circuit, and a state latch operatively coupled to the write control circuit.

Provided are a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus capable of providing characteristics of high gain and low noise as much as possible in a configuration that can detect stored signals during the integration period. A pixel includes a first transient gate PG formed between a floating diffusion FD and a photodiode PD and capable of controlling a charge transfer path CTP between the FD and the PD. The FD and the PD are coupled by the first transient gate PG, and photocharges generated by the PD are transferred immediately to the FD.

A pixel is formed by a photoelectric conversion film that converts light into a photogenerated current and a semiconductor pixel circuit. The photoelectric conversion film and the semiconductor pixel circuit are stacked and electrically coupled within the pixel. The photoelectric conversion film has an infrared NIR sensitivity. The semiconductor pixel circuit includes a pixel analog circuit that detects the photoelectric conversion current, a sample-and-hold circuit, an ADC, in-pixel logic, digital memory and the like.