BRILLNICS SINGAPORE PTE. LTD.

Focuses on advanced pixel architectures, often involving vertical stacking (3D) or silicon-on-insulator (SOI) structures, to improve performance, density, or functionality of photodiodes, transistors, and floating diffusion regions within image sensor pixels.

Layout, material composition, and structural arrangement of photoelectric conversion elements and associated circuitry within image sensor arrays, including infrared detectors and back-side illuminated structures.

Image sensors tailored for specific advanced functionalities beyond basic image capture, such as high dynamic range (HDR) imaging, single-photon detection, auto-focus, or distance measurement (LiDAR), often incorporating specialized pixel designs or processing.

Focuses on the physical design, materials, and manufacturing processes for individual memory cells, including transistor structures, interconnects, and multi-layered (3D) architectures to enhance density and performance.

Design and operation of analog and mixed-signal circuits within the memory array, such as page buffers, sense amplifiers, and data latches, responsible for reading and writing data from/to memory cells.