EGTM Co., Ltd.

Disclosed is a method of depositing thin film, the method comprising: supplying an adduct precursor to the inside of a chamber in which a substrate including at least one gap feature is placed so that the adduct precursor is adsorbed to the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adduct precursor to form the thin film and fill the gap feature, wherein the adduct precursor is formed by mixing 1 to 5 moles of a compound and 1 to 5 moles of a metal compound.

Disclosed is a method of treating thin films, the method comprising: supplying a capping precursor to the inside of a chamber where a substrate is placed to adsorb the capping precursor onto a thin film formed on the substrate; purging the inside of the chamber; supplying a first reaction material to the inside of the chamber to form a stressor layer; purging the inside of the chamber; annealing the substrate; supplying an etch initiator to the inside of the chamber; purging the inside of the chamber; supplying a second reaction material to the inside of the chamber to activate the etch initiator, and purging the inside of the chamber.

Disclosed is a method for manufacturing an aluminum precursor formed by mixing 1 to 3 moles of a compound represented by the following Chemical Formula 1 or following Chemical Formula 2 and 1 to 3 moles of a compound represented by the following Chemical Formula 3, wherein X is O or S, and R1 or R2 is each independently selected from an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms, wherein X is O or S, n is 1 to 5, and R1 to R4 are each independently selected from a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms, wherein R1, R2 and R3 are different from each other, and each independently selected from a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a dialkylamine having 1 to 6 carbon atoms, a cycloamine group having 1 to 6 carbon atoms, or a halogen atom.

An embodiment of the present disclosure provides a vanadium precursor compound represented by Chemical Formula 1 or 2. (In Chemical Formula 1, R 1 , R 2 , R 3 and R 4 are each independently selected from hydrogen, a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms, and in Chemical Formula 2, n is an integer of 0 to 4, a ring including a vanadium element is a heterocycloalkyl group or a heterocycloalkene group, and R 1 , R 2 , R 3 , R 4 , R 5 and R 6 are each independently selected from hydrogen, a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 6 carbon atoms.)

A compound for forming a molybdenum-containing thin film according to an embodiment of the present disclosure is a compound represented by Chemical Formula 1, in which in Chemical Formula 1, R 1 and R 2 are each independently selected from hydrogen, a linear alkyl group having 1 to 6 carbon atoms, and a branched alkyl group having 3 to 6 carbon atoms, R 3 is selected from a linear alkyl group having 1 to 6 carbon atoms, a branched alkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 30 carbon atoms, and X is a halogen element. The compound according to an embodiment of the present disclosure has excellent thermal stability and volatility, and can be used as a precursor for forming a molybdenum-containing thin film, and can provide a high-quality molybdenum-containing thin film.

Provided is a method for areal selective forming of a thin film according to an exemplary embodiment of the present disclosure including: a substrate preparation step of supplying and stabilizing a substrate including a growth area and a non-growth area into a chamber; a precursor supply step of supplying a metal precursor compound into the chamber and adsorbing the metal precursor compound to the substrate; a purge step of purging the inside of the chamber; and a thin film formation step of supplying a reaction material into the chamber to react with the metal precursor compound and form a thin film, in which the metal precursor compound is a Group 5 metal precursor compound represented by Chemical Formula 1 below:

Disclosed is a method of treating thin films, the method comprising: supplying a precursor to the inside of a chamber where a substrate is placed to adsorb the precursor onto the substrate; purging the inside of the chamber; supplying an etching initiator to the inside of the chamber; purging the inside of the chamber; supplying a reactant to the inside of the chamber; and purging the inside of the chamber.

Disclosed is a method of depositing thin films, the method comprising supplying a metal precursor to the inside of a chamber where a substrate is placed to adsorb the metal precursor onto the substrate; purging the inside of the chamber; supplying a reactant to the inside of the chamber to react with the adsorbed metal precursor and form a thin film, wherein the metal precursor includes one or more halogen groups and one or more organic ligands.

Disclosed is a method of a method of treating thin films, the method comprising supplying a modifier containing a halogen group to the inside of a chamber where a substrate is placed to adsorb the modifier onto a thin film formed on the substrate; purging the inside of the chamber; supplying an etching activator to the inside of the chamber to react with the adsorbed modifier and treat the thin film; and purging the inside of the chamber.

A precursor for forming a silicon-containing thin film according to an embodiment of the present disclosure is a compound represented by the following Chemical Formula 1 or 2, in which in Chemical Formulas 1 and 2, A is a cycloalkyl group having 4 to 7 carbon atoms, R 1 , R 4 and R 5 are each independently selected from hydrogen; and a substituted or unsubstituted alkyl group having 1 to 3 carbon atoms, and R 2 , R 3 and R 6 are each independently an alkyl group having 1 or 2 carbon atoms. Accordingly, it is possible to provide a silicon-containing thin film with high hardness and low dielectric constant characteristics using a silicon precursor having an asymmetric structure containing a cycloalkyl group.