EGTM Co., Ltd.

The present specification provides an organic group 4 metal precursor compound and a method for forming a thin film using the same.

Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear growth retardant is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.

According to one embodiment of the present invention, a method for forming a thin film using a surface protection material comprises: a surface protection layer forming step of forming a surface protection layer on the surface of a substrate by supplying a surface protection material to the inside of a chamber in which the substrate is placed; a step of performing a primary purging of the inside of the chamber; a metal precursor supply step of supplying a metal precursor to the inside of the chamber; a step of performing a secondary purging of the inside of the chamber; and a thin film forming step of supplying a reactive material to the inside of the chamber so as to react with the metal precursor and form a thin film.

Provided is a method for areal selective forming of a thin film according to an exemplary embodiment of the present disclosure including: a substrate preparation step of supplying and stabilizing a substrate including a growth area and a non-growth area into a chamber; a precursor supply step of supplying a metal precursor compound into the chamber and adsorbing the metal precursor compound to the substrate; a purge step of purging the inside of the chamber; and a thin film formation step of supplying a reaction material into the chamber to react with the metal precursor compound and form a thin film, in which the metal precursor compound is a Group 5 metal precursor compound represented by Chemical Formula 1 below:

Disclosed is a method of forming a thin film using a chemical purge material, the method comprising supplying a metal precursor to the inside of a chamber oh which a substrate is placed; purging the interior of the chamber; supplying a reactant to the inside of the chamber so that the reactant reacts with the metal precursor to form the thin film; and supplying a chemical purge material to the inside of the chamber so that a portion of the reactant is removed.

According to the embodiment of the present disclosure, an organo tin compound is represented by the following Chemical Formula 1: In Chemical Formula 1, L 1 and L 2 are each independently selected from an alkoxy group having 1 to 10 carbon atoms and an alkylamino group having 1 to 10 carbon atoms, R 1 is a substituted or unsubstituted aryl group having 6 to 8 carbon atoms, and R 2 is selected from a substituted or unsubstituted linear alkyl group having 1 to 4 carbon atoms, a branched alkyl group having 3 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an allyl group having 2 to 4 carbon atoms.

According to an embodiment of the present disclosure, a niobium precursor compound is represented by Chemical Formula 1 or Chemical Formula 2 below: Therefore, the niobium precursor compound according to an embodiment of the present disclosure has excellent thermal stability, exists in a liquid state at room temperature, and has high volatility, thereby having an advantage which is advantageous for application to a thin film forming process. Further, the niobium thin film formed using the niobium precursor compound according to an embodiment of the present disclosure has a small residual content and has uniform physical properties.

Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear growth retardant is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.

Disclosed is a method of forming an area-selective thin film, the method comprising supplying the selectivity material to the inside of the chamber in which the substrate is placed, so that the selectivity material is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.

According to examples of the present disclosure, the organometallic compound is represented by Formula 1 below, which is used as a precursor when a Group 4 metal-containing thin film is deposited to provide a high-quality Group 4 metal-containing thin film. In Formula 1, M is Zr or Hf, R1 is selected from a linear alkyl group having 2 to 6 carbon atoms and a branched alkyl group having 3 to 6 carbon atoms, R2 is a linear alkyl group having 1 to 3 carbon atoms, and R1 and R2 are different from each other.