ENKRIS SEMICONDUCTOR, INC.

A composite substrate includes a substrate, a high-resistance layer located on the substrate, the high-resistance layer comprising a first low-temperature aluminum nitride (AlN) layer, a high-temperature AlN layer and a second low-temperature AlN layer which are stacked in sequence, and a growth substrate located on a side, away from the substrate, of the high-resistance layer. Under the action of the first low-temperature AlN layer, a tensile stress on the high-temperature AlN layer may be reduced, to reduce a dislocation, and further improve a crystal quality of the high-temperature AlN layer and ensure resistivity of the high-temperature AlN layer; and an element of Al in the high-temperature AlN layer is prevented from diffusing into the growth substrate, to protect the crystal quality of the high-temperature AlN layer and improve a bonding effect between the high-resistance layer and the growth substrate. Thus, stability and reliability of the composite substrate are greatly improved.

A manufacturing method for a semiconductor structure includes: providing a Si-supporting substrate having a SiO 2 protection layer on a surface of the Si-supporting substrate; thinning the SiO 2 protection layer to form a SiO 2 intermediate layer; disposing a Si growth substrate on a side, away from the Si-supporting substrate, of the SiO 2 intermediate layer; and disposing a device layer on a side, away from the Si-supporting substrate, of the Si growth substrate. The technical solutions of the present disclosure may reduce a possibility of generating parasitic capacitance and leakage current, and greatly improve the reliability of a device.

A semiconductor structure includes a diamond substrate, a SiC intermediate layer, and a device layer that are stacked. The diamond substrate includes a plurality of first grooves on a side close to the SiC intermediate layer, the plurality of first grooves are spaced apart, the SiC intermediate layer includes a plurality of second grooves on a side close to the diamond substrate, the plurality of second grooves are spaced apart, and the plurality of first grooves and the plurality of second grooves are in a one-to-one correspondence and form a plurality of cavities. Adopting the structure including the diamond substrate, the SiC intermediate layer, and the device layer in the present disclosure may reduce defects caused by a lattice mismatch and a thermal mismatch between a substrate and a device, thereby improving overall quality and reliability of a semiconductor structure.

A manufacturing method includes: growing a group III nitride layer on a supporting substrate; bonding the group III nitride layer to a target substrate having a dielectric layer on a surface of the target substrate; removing the supporting substrate; and forming a plurality of hexagonal nanopores arranged at intervals on a side, away from the target substrate, of the group III nitride layer. The technical solutions of the present disclosure may reduce a stress caused by lattice mismatch and thermal mismatch between the group III nitride layer and a substrate, thereby improving a quality of a group III nitride substrate.

A semiconductor structure includes: a miscut angle substrate; a mask layer located on a side of the miscut angle substrate, where the mask layer includes a through hole penetrating through the mask layer; and an epitaxial layer, where at least part of the epitaxial layer is located in the through hole. The technical solutions of the present disclosure may reduce a dislocation density of the semiconductor structure, improve a crystal quality, and improve characteristics of a semiconductor device.

Disclosed are a dielectric structure, a semiconductor device structure and manufacturing methods therefor. The manufacturing method for the dielectric structure includes growing a single-crystal AlN layer on the SiC substrate, and then simultaneously oxidizing the SiC substrate and the single-crystal AlN layer to form a composite dielectric layer including a SiO 2 layer and a single-crystal AlO X layer. By simultaneously oxidizing the single-crystal AlN layer provided on the surface of the SiC substrate and the SiC substrate, on the one hand, the AlO X layer includes a higher background concentration of nitrogen, so that nitrogen ions diffuse into the SiO 2 , thereby improving the interface characteristics of the SiC/SiO 2 ; and on the other hand, after oxidation of the single-crystal AlN layer, the single-crystal AlO X layer with wide band gap and high-density may be introduced, so that the single-crystal AlO X has good quality and a high-quality interface with SiO 2 .

Disclosed are a dielectric structure, a semiconductor device structure, and manufacturing methods therefor. The manufacturing method for the dielectric structure includes: performing Al doping to a surface of a SiC substrate to form an Al-doped SiC layer and then oxidizing the Al-doped SiC layer to form a dielectric layer including at least a SiAlO layer. On one hand, thermal oxidation temperature required for oxidizing SiC to SiO 2 may be reduced, so that an interface state with a high density at an interface of SiC/SiO 2 is reduced, and quality of the dielectric layer is improved. On the other hand, original Si in the SiO 2 is replaced with Al, a more stable structure may be formed, and the quality of the dielectric layer is further improved.

Disclosed are an enhancement-mode semiconductor structure and a method for manufacturing the same. The method includes: providing a substrate of a first conductivity type; growing a first semiconductor layer of the first conductivity type and a second semiconductor layer of the first conductivity type on the substrate sequentially; etching a groove on a side, away from the substrate, of the second semiconductor layer, where the groove penetrates through the second semiconductor layer and partially penetrates through the first semiconductor layer; and growing a third semiconductor layer of a second conductivity type in the groove by an in-situ doped selective epitaxy process, where the third semiconductor layer has at least two different doping concentrations along a first direction and has at least two different widths along a second direction.

The present disclosure provides a semiconductor structure and a forming method thereof. The semiconductor structure includes: a substrate and an epitaxial layer disposed on the substrate. At least a part of the epitaxial layer is doped with metal atoms, and the doping concentration of the metal atoms at the bottom surface of the epitaxial layer near the substrate is larger than 1×10 17 atoms/cm 3 .

Disclosed is a preparation method for a semiconductor structure. The semiconductor structure includes: a substrate; an epitaxial layer and an epitaxial structure that are stacked on the substrate in sequence. The epitaxial layer is doped with a doping element. In the forming process, a sacrificial layer is formed on the epitaxial layer, and the sacrificial layer is repeatedly etched, such that a concentration of the doping element in the epitaxial layer is lower than a preset value. In this application, the sacrificial layer is formed on the epitaxial layer, and the sacrificial layer is repeatedly etched, such that the concentration of the doping element in the epitaxial layer is lower than the preset value, so as to prevent the doping element in the epitaxial layer from being precipitated upward into an upper-layer structure, ensure the mobility of electrons in a channel layer, and improve the performance of a device.