EPISTAR CORPORATION

A semiconductor device, includes: a semiconductor stack, including a top surface, a bottom surface and a side wall; and an insulating structure, covering the semiconductor stack; wherein: the side wall includes a first sub-side wall connected to the bottom surface; and the insulating structure covers the first sub-side wall and a portion of the insulating structure covering the first sub-side wall comprises a gradient thickness that gradually decreases toward the bottom surface.

A light-emitting diode, includes a semiconductor stack having a first semiconductor layer, an active region, a second semiconductor layer and a first recess formed in the semiconductor stack, wherein the first recess includes a side wall and a bottom, and wherein the side wall includes side walls of the second semiconductor layer and the active region and the bottom includes an upper surface of the first semiconductor layer; a conductive layer, disposed on the semiconductor stack and electrically connecting the second semiconductor layer; an insulating layer, formed on the conductive layer, including: a first opening on the second semiconductor layer and surrounding the first recess in a plan view; and a first insulating island covering the first recess and on the conductive layer; a first electrode, formed on the insulating layer and electrically connected to the first semiconductor layer; and a second electrode, formed on the insulating layer and connected to the conductive layer through the first opening.

A semiconductor structure includes a first semiconductor stack, a tunnel junction structure and a second semiconductor stack. The first semiconductor stack includes a first first-type semiconductor layer, a first active region and a first second-type semiconductor layer. The first active region has a plurality of first recesses. The first second-type semiconductor layer conformally covers the first active region and has a plurality of second recesses corresponding to the first recesses. The tunnel junction structure conformally covers the first second-type semiconductor layer and has a plurality of third recesses corresponding to the second recesses. The second semiconductor stack is disposed on the tunnel junction structure and includes a second first-type semiconductor layer, a second active region and a second second-type semiconductor layer stacked in sequence from bottom to top. The second first-type semiconductor layer fills up the third recesses.

A manufacturing method for a photoelectric module is provided, which includes the following steps. A temporary substrate, a first lens, and a second lens are provided, wherein the first lens and the second lens are embedded in the temporary substrate. A first photoelectric element is arranged on the first lens. A second photoelectric element is arranged on the second lens. An electrical connection structure is formed on the first and second photoelectric elements. The temporary substrate is removed to expose the first lens and the second lens.

A photo-detecting device includes a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, a light-absorbing layer located between the first semiconductor layer and the second semiconductor layer, and a first interface between the second semiconductor layer and the light-absorbing layer. The second semiconductor layer includes a first region having a first dopant and a second region surrounding the first region. The light-absorbing layer includes a third region having the first dopant and a fourth region surrounding the third region. The first dopant of the first region close to the first interface has a first doping concentration, and the first dopant of the third region close to the first interface has a second doping concentration larger than the first doping concentration.

An optoelectronic semiconductor device includes a base, a semiconductor stack and a light-absorbing layer. The semiconductor stack includes a first semiconductor layer on the base, a second semiconductor layer on the first semiconductor layer, and a light absorbing layer between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer includes a modified region and an unmodified region surrounding the modified region. The bonding structure is between the first semiconductor layer and the base. The first electrode structure is disposed on and connected to the second semiconductor layer. A thickness of the second semiconductor layer is less than or equal to 50 nm.

The present disclosure provides a semiconductor device including a first epitaxial stack and a first contact electrode. The first epitaxial stack includes a first semiconductor, a second semiconductor, and a first active region disposed between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a first capping layer having a first thickness. The second semiconductor structure includes a second capping layer having a second thickness larger than the first thickness. The first active region includes a light-emitting stack, a first confinement structure located between the light-emitting stack and the first capping layer, and a second confinement structure located between the light-emitting stack and the second capping layer. The first confinement structure has a third thickness, and the second confinement has a fourth thickness less than the third thickness. The first contact electrode is electrically connected to the first semiconductor structure.

A light detecting device includes a first semiconductor layer, an absorption layer located on the first semiconductor layer, a second semiconductor layer located on the absorption layer, a filter structure located on the second semiconductor layer, an opening formed in the filter structure and an electrode structure disposed on the filter structure. The electrode structure connects the second semiconductor layer through the opening. The filter structure includes a plurality of first layers and a plurality of second layers which are alternately stacked, and the plurality of the first layers includes an uppermost first layer with a first refractive index and one of the plurality of second layers has a second refractive index larger than the first refractive index. The uppermost first layer is located between the electrode structure and the plurality of second layers and directly contacts the electrode structure.

A light-emitting device includes a first nitride semiconductor structure; a stress relief structure on the first nitride semiconductor structure including a plurality of narrow band gap layers and a plurality of wide band gap layers alternately stacked, wherein one of the plurality of wide band gap layers includes a plurality of wide band gap sub-layers and one of the plurality of wide band gap sub-layers includes aluminum; an active structure on the stress relief structure including a plurality of quantum well layers and a plurality of barrier layers alternately stacked, wherein one of the plurality of barrier layers includes a plurality of barrier sub-layers and one of the plurality of barrier sub-layers includes aluminum, an aluminum composition of the wide band gap sub-layer is greater than or equal to that of the barrier sub-layer, and an average aluminum composition of the wide band gap layer is greater than that of the barrier layer; and an electron blocking structure on the active structure.

An optoelectronic device includes a substrate, a first semiconductor stack located on the substrate, a second semiconductor stack located on the first semiconductor stack, and a first optical structure located between the first semiconductor stack and the second semiconductor stack. The first semiconductor stack includes a first semiconductor layer, a second semiconductor layer and a first active layer which emits or absorbs a first light with a first wavelength. The second semiconductor stack includes a third semiconductor layer, a fourth semiconductor layer and a second active layer which emits or absorbs a second light with a second wavelength smaller than the first wavelength. The first optical structure includes a plurality of first parts and a plurality of second parts. The first parts and the second parts are alternately arranged by a first period along a horizontal direction parallel to the substrate.