EPISTAR CORPORATION

A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.

A semiconductor device is provided, which includes an epitaxial structure, a first electrode, an insulating structure, a stop layer, and a second electrode. The epitaxial structure includes a first semiconductor layer, a second semiconductor layer and an active region located between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a first portion and a second portion. The first portion has a first side surface. The first electrode is located under the first semiconductor layer. The insulating structure distributed on the first side surface and having an opening which corresponds to the first electrode. The stop layer contacts the insulating structure distributed on the first side surface. The second electrode is located on the second semiconductor layer. The first portion has a first width, and the second portion has a second width less than the first width.

A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and an extension electrode. The semiconductor stack includes a first semiconductor structure, an active structure, and a second semiconductor structure stacked in sequence along a vertical direction. The third semiconductor structure connects to the first semiconductor structure and includes a first part. The dielectric layer connects to the first semiconductor structure and includes an opening corresponding to the first part. The extension electrode connects to the second semiconductor structure without overlapping with the third semiconductor 10 structure in the vertical direction. The first part has a near electrode end and a far electrode end opposite to the near electrode end, and a distance from the far electrode end to the opening is smaller than a distance from the near electrode end to the opening.

The present disclosure provides a semiconductor device including a semiconductor structure, a first metal element-containing structure, and a layer. The semiconductor structure includes a first semiconductor layer having a first material, a second semiconductor layer, an active region between the first semiconductor layer and the second semiconductor layer. The first metal element-containing structure is located on the semiconductor structure and includes a first metal element. The layer has a second material and a second metal element and is located between the first semiconductor layer and the first metal element-containing structure. The first material has a conduction band edge Ec and a valence band edge Ev, and the second material has a work function WF 1 , when the first semiconductor layer is of an n-type conductivity, the work function WF 1 fulfills WF 1 <(Ec+Ev)/2, and when the first semiconductor layer is of a p-type conductivity, the work function WF 1 fulfills WF 1 >(Ec+Ev)/2.

A light-emitting device includes a semiconductor stack, first and second insulative layers, a reflective conductive structure, and first and second pads. The semiconductor stack includes a first semiconductor layer, and a mesa having an active region having a second semiconductor layer and formed on the first semiconductor layer. The first insulative layer is formed on the semiconductor stack and has first openings. The reflective conductive structure is formed on the first insulative layer and is electrically connected to the second semiconductor layer through the first openings. The second insulative layer is formed on the reflective conductive structure and includes second openings and a contact area covering portions overlapped with the first and second openings. A first pad is formed on the second insulative layer and electrically connected to the first semiconductor layer. A second pad formed on the second insulative layer and electrically connected to the second semiconductor layer.

A semiconductor device, includes: a first conductive type semiconductor region including a first semiconductor structure, wherein the first semiconductor structure includes one or more pairs of stack, the one or more pairs of stack respectively includes a first layer and a second layer, the first layer includes Al x Ga 1-x N, the second layer includes Al y Ga 1-y N, wherein 0≤x<1, 0<y<1, x<y, wherein one of the one or more pairs of stack includes an interface region located between the first layer and the second layer adjacent to the first layer; a second conductive type semiconductor region located on the first conductive type semiconductor region; and an active region located between the first conductive type semiconductor region and the second conductive type semiconductor region; wherein the first semiconductor structure includes a first dopant having a first doping concentration with a peak value at the interface region.

A semiconductor structure includes a substrate and a semiconductor stack. The substrate has a first surface and a second surface, the first surface has a first protruding unit and a second protruding unit which are arranged in a horizontal direction, and the second surface has a third protruding unit and a fourth protruding unit which are arranged in the horizontal direction. In a vertical direction perpendicular to the horizontal direction, the first protruding unit overlaps the third protruding unit, and the second protruding unit overlaps the fourth protruding unit. The semiconductor stack connects to the first surface. If the second surface is irradiated by a light beam which is parallel to the vertical direction, the light beam is capable of substantially forming a uniform energy distribution on the first surface.

A method of processing a semiconductor structure includes: providing the semiconductor structure which includes a substrate and a semiconductor stack connected to a first surface of the substrate; and providing a light beam to pass through the substrate for irradiating the first surface to separate the substrate and the semiconductor stack. The first surface extends along a horizontal direction and has a first protruding unit and a second protruding unit which are arranged adjacent to each other. The first protruding unit has a top, and a first inclined surface and a second inclined surface which are located at two sides of the top. The light beam includes a first sub-beam arranged for perpendicularly irradiating the first inclined surface.

A semiconductor device arrangement includes a carrier, a semiconductor device located on the carrier and an adhesive portion between the carrier and the semiconductor device. The semiconductor device includes a semiconductor stack, a first electrode, a second electrode, a first electrical connection and a second electrical connection. The first electrode is located between the semiconductor stack and the first electrical connection, and both of the first electrical connection and the second electrical connection are arranged to face the carrier. The adhesive portion includes a first protruding portion and a second protruding portion. The first protruding portion and the second protruding portion are respectively connected with the first electrical connection and the second electrical connection. The uppermost surfaces of the first electrical connection and the second electrical connection are located at different elevations, and at least one of the first and second electrical connections is located below the semiconductor stack.