HyperLight Corporation

An optical device including a waveguide and an electrode is described. The waveguide includes at least one optical material having an electro-optic effect. The electrode includes a channel region and extensions protruding from the channel region. The extensions are closer to a portion of the waveguide than the channel region is. Each extension includes a connecting portion coupled to the channel region and a retrograde portion. The connecting portion is between the retrograde portion and the channel region. The retrograde portion and/or the channel region has a width of not more than one micrometer.

A substrate configured for an electro-optic device and an electro-optic device formed using the substrate are described. The substrate includes a semiconductor substrate, an insulating layer, and at least one thin film optical material. The semiconductor substrate includes a trap-rich layer and an underlying substrate layer. The insulating layer is on the semiconductor substrate, The trap-rich layer is between the underlying substrate layer and the insulating layer. The thin film optical material(s) have an electro-optic effect and are on the insulating layer.

A photonics device is described. The photonics device includes a plurality of unit cells. Each of the unit cells includes a first portion of a waveguide, an electrode section proximate to the first portion of the waveguide, and an integrated circuit (IC) driver coupled to and configured to drive the electrode section. The unit cells are adjacent and distributed along a second portion of the waveguide. The waveguide includes at least one electro-optic material possessing a Pockels Effect. The waveguide is also configured to carry an optical signal. The IC driver, the electrode section, and the first portion of the waveguide for each of the unit cells are integrated into the photonics device. The unit cells are configured such that the photonics device has a 3 dB bandwidth of at least 70 GHz and the first portion of the waveguide has a length not exceeding five hundred micrometers.

An optical device includes a substrate, an oxide layer on the substrate and an electro-optic device on the oxide layer. The oxide layer is at least one micrometer thick. The electro-optic device includes an electro-optic material having a thickness of not more than one micrometer. The silicon substrate, oxide layer, and the electro-optic material terminate at an edge. At least one of the silicon substrate has a thickness of at least five hundred micrometers or the edge includes a recessed region corresponding to a portion of the oxide layer.

A photonics device package is described. The photonics device package includes a thin film lithium-containing (TFLC) photonics integrated circuit (PIC) and an additional integrated circuit (IC). The TFLC PIC includes TFLC optical structures and electrodes. The TFLC structures include at least one TFLC electro-optic material. At least one of the TFLC structures includes a ridge and a slab and has a width not exceeding one micrometer. The TFLC PIC has a footprint. The TFLC structures occupy not more than fifty percent of the footprint. In addition, the TFLC structures are encapsulated in the TFLC PIC. The additional IC is mechanically coupled with the TFLC PIC after formation of the TFLC structures.

A photonics device is described. The photonics device includes an optical device and a balun. The optical device includes a waveguide and a signal electrode. The waveguide includes a lithium-containing electro-optic material. The signal electrode varies the electric field at the waveguide. The balun is configured to convert a differential input signal to a single-ended output signal. The balun is connected to the signal electrode and provides the signal electrode with the single-ended output signal.

A thin film lithium-containing (TFLC) optical device is described. The TFLC optical device includes at least one electrode and a TFLC waveguide. A portion of each of the electrode(s) is in a modulation region and carries an electrode signal. The TFLC waveguide includes first, second, and third portions. The first portion is optically coupled with a first waveguide. The second portion is optically coupled with a second waveguide. The third portion is in the modulation region. An optical signal in the third portion of the TFLC waveguide is modulated by an electric field generated by the electrode signal. The TFLC waveguide includes a TFLC electro-optic material. At least a part of the first and/or second portion of the waveguide is aligned with the modulation region.

A photonics device is described. The photonics devices include at least one electrode and a waveguide. The waveguide includes electro-optic material(s), a ridge, and a slab. A first portion of the waveguide is proximate to the electrode(s), while a second portion of the waveguide includes a bend. The ridge includes a first side and a second side opposite to the first side. Portions of the slab are proximate to the first side and the second side of the ridge in the first portion of the waveguide. A portion of the slab is omitted in the second portion of the waveguide.

An optical device is described. The optical device includes a substrate, an optical channel, a photodiode and an optical path that couples the channel to the photo diode. The optical path has an optical path length that is at least one fourth of the optical channel length

An optical device is described. The optical device includes a waveguide, a first engineered electrode, and a second engineered electrode. The waveguide includes at optical material(s) having an electro-optic effect. The optical material(s) include lithium. A portion of the waveguide has a waveguide width. The first engineered electrode includes a first channel region and first extensions protruding from the first channel region. The first extensions are closer to the portion of the waveguide than the first channel region is. The second engineered electrode includes a second channel region and second extensions protruding from the second channel region. The second extensions are closer to the portion of the waveguide than the second channel region is. A first extension of the first extensions is a distance from a second extension of the second \extensions. The distance is less than the waveguide width.