MPI CORPORATION

A probe head includes a plurality of probes, an upper guide plate, and a lower guide plate. Each probe has a tip, a tail, and a body. The tip is configured to contact an electronic device under test. The body extends along a longitudinal axis between the tail and the tip and has a multilayer structure including a plurality of probe arms and at least one slit. The probe arms are arranged in a widthwise direction and separated by the at least one slit penetrating the body in a thickness direction. The probe arms converge at upper and lower key portions, which respectively correspond to guide holes of the upper and lower guide plates for accommodating the probe. At least one of the upper and lower key portions is located within the corresponding guide hole.

The present invention provides a testing method, a probe head, a probe card and a probe system for a micro-bump test. The testing method includes providing a DUT with first and second bump units for transmitting power or ground signal and test signal, respectively, wherein the first bump unit has micro-bumps grouping together; placing the DUT on a chuck; providing the probe card wherein the interval between the head portions of the adjacent probes is larger than or equal to the width of one micro-bump; and testing the DUT by using the head portions of the probes to contact the bump units of the DUT, respectively. That lowers the manufacturing difficulty and cost of the probe card, and the difficulty of using it on the machine for testing, prevents the DUT from too complicated design, and prevents the adjacent probes from collision and the resulting short circuit or interference.

A probe includes a probe tip configured to contact a corresponding pad on an electronic device under test during testing. The probe further includes a probe tail positioned opposite to the probe tip. Between the probe tip and the probe tail, the probe includes a probe body extending along a longitudinal axis. The probe body includes a slit extending along the longitudinal axis, thereby defining two probe arms separated by the slit. A transverse cross-section of the probe body, taken perpendicular to the longitudinal axis, has a width side and a thickness side, with the two probe arms arranged along the width side. Each of the two probe arms is formed with a bump structure within the slit, wherein the two bump structures face each other across the slit.

A probe unit includes first and second probes of equal length. A probe body of at least one of the probes has a slot extending along a longitudinal direction thereof to define two slats. A total cross-sectional area of the slats of the first probe is greater than that of the second probe. Alternatively, the probe body of the second probe is solid, and the total cross-sectional area of the slats of the first probe is greater than the cross-sectional area of the solid probe body of the second probe. The slats are shaped in such a way that a contact force of the first probe is greater than that of the second probe, thereby meeting testing requirements of conductive contacts of different sizes on an electronic device under test, while reducing problems of different probe tip wear rates and excessive probe mark area ratio differences.

A contact probe defined with widths and thicknesses along first and second horizontal axes respectively and cross-sectional areas perpendicularly to a vertical axis includes a body portion for being curved at least along the first horizontal axis while disposed between upper and lower die units, a probe tip for contacting a contact pad of a device under test, and a probe tail including a contact end portion with a contact end surface for contacting a contact pad of an interface board. The contact end portion is at least partially smaller in width and thickness than the body portion, so that the contact end surface has an area smaller than a cross-sectional area of the body portion, thereby capable of stable contact with the contact pad of the interface board and prevented from exceeding its edge, obtaining stable contact resistance to ensure test results with stable and high accuracy.

A probe assembly includes at least one probe, a probe holder, and an adaptor. The probe is configured to include a probe tip and has a first a first length and a first coefficient of thermal expansion. The probe holder is configured to hold the probe, and has a second length and a second coefficient of thermal expansion. The adaptor is configured to attach to the probe holder, and has a third length and a third coefficient of thermal expansion. Furthermore, the first coefficient of thermal expansion is a positive coefficient of thermal expansion, and one of the second coefficient of thermal expansion and the third coefficient of thermal expansion corresponds to either: a material having a negative coefficient of thermal expansion; or a composite structure comprising a positive thermal expansion material and a negative thermal expansion material, arranged such that the overall thermal expansion characteristic is stable.

A tip length calibration device, a probe system including the same, a tested semiconductor device, a method for producing the same, a method for tip length calibration, and a method for testing an unpackaged semiconductor device. The tip length calibration device includes a base, a position adjusting mechanism, and a target detection module. The position adjusting mechanism and the target detection module are disposed on the base. The position adjusting mechanism is configured to move the probe assembly to a sensing region, and the target detection module is configured to determine whether a tip portion of the probe assembly is present in the sensing region, such that a calibrated tip length can be acquired.

A probe head includes a probe seat, vertical probes, and coaxial probes. The vertical probes are slidably inserted in guiding holes of the probe seat, and have lower end portions for contacting electrically conductive contacts of a device under test. The coaxial probe includes a probe main body provided from the outside to the inside thereof coaxially with an outer conductor, a dielectric layer and an inner conductor in order, and a tip unit disposed at a lower end portion of the probe main body and including first and second tips electrically connected with the outer and inner conductors respectively for contacting electrically conductive contacts of the device under test. The coaxial probes include first and second loopback probes composing a loopback probe pair for being configured as a part of a loopback test path. As a result, the present invention meets the high-frequency loopback test requirements.

A probe card and a manufacturing method of a probe card are provided. The probe card includes a probe head, first and second substrates, an insulating component, and an adhesive member. The second substrate is disposed between the probe head and the first substrate, and is disposed on the first substrate. The second substrate faces the first substrate and includes second contacts. The second contacts are electrically connected to first contacts of the first substrate. The insulating component is disposed between the first substrate and the second substrate, and disposed at an outer side of the second contacts. The adhesive member is disposed on the first substrate, arranged on at least a part of the side surface of the second substrate, and disposed at an outer side of the insulating component.

A probe card, a method for designing the probe card, a method for producing a tested semiconductor device, a method for testing an unpackaged semiconductor by the probe card, a device under test, and a probe system are provided. The probe card includes a wiring substrate, a connection carrier board, and a probe device. At least two probes electrically connected to a loopback path of the connection carrier board to form a test signal loopback path. The probe device has a probe device impedance on the test signal loopback path. The loopback path has a loopback line impedance on the test signal loopback path. A difference between the probe device impedance on the test signal loopback path and the loopback line impedance on the test signal loopback path is in an impedance range.