OSRAM OLED GMBH

In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, and a thermal decoupling structure in a region between two adjacent individual emitters, wherein the decoupling structure includes an electrically conductive cooling element located on the contact side and completely covering a contiguous cooling region of the contact side, wherein the cooling element is completely electrically isolated from the semiconductor layer sequence and thermally coupled to the semiconductor layer sequence along the cooling region, and wherein the cooling region has a width, measured along the lateral transverse direction, which is at least half a width of an adjacent contact region.

A method for producing an optoelectronic semiconductor component and an optoelectronic component are disclosed. In an embodiment a method includes providing an optoelectronic semiconductor chip comprising at least one light-emitting layer and at least one cavity and introducing at least one precursor of a conversion element in the at least one cavity, wherein the at least one conversion element comprises a perovskite-based ABX 3 or A 2 BB′X 6 structure.

In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

A method of producing an optoelectronic semiconductor component includes providing a primary light source having a carrier and a semiconductor layer sequence mounted thereon that generates primary light, wherein the semiconductor layer sequence is structured into a plurality of pixels driven independently of each other, the carrier including multiple control units that drive the pixels, providing a conversion unit for converting the primary light into secondary light, wherein the conversion unit is grown continuously from semiconductor material, structuring the conversion unit, removing portions of the semiconductor material in accordance with the pixels, and applying the conversion unit to the semiconductor layer sequence so that the remaining semiconductor material is uniquely assigned to a portion of the pixels, wherein at least two conversion units are grown on a common growth substrate, and wherein at least one of the conversion units is structured while still applied to the common growth substrate.

The present invention relates to heteroleptic complexes comprising a phenylimidazole or phenyltriazole unit bonded via a carbene bond to a central metal atom, and phenylimidazole ligands attached via a nitrogen-metal bond to the central atom, to OLEDs which comprise such heteroleptic complexes, to light-emitting layers comprising at least one such heteroleptic complex, to a device selected from the group consisting of illuminating elements, stationary visual display units and mobile visual display units comprising such an OLED, to the use of such a heteroleptic complex in OLEDs, for example as emitter, matrix material, charge transport material and/or charge blocker.

A composite component, a device, and method for producing the composite component including a plurality of optical components, a removable sacrificial layer, a retaining structure and a common intermediate carrier are provided, wherein the optical components each have an optical element for shaping a light beam and the sacrificial layer is arranged in the vertical direction at least in places between the intermediate carrier and the optical components. The retaining structure includes retaining elements, wherein the retaining structure and the sacrificial layer form a mechanical connection between the intermediate carrier and the optical components. The optical components are mechanically connected to the intermediate carrier only via the retaining structure, wherein the retaining elements are formed in such a way that under mechanical load they release the optical components so that the optical components are formed to be detachable from the intermediate carrier and thus transferable.

An optoelectronic semiconductor component includes a primary light source including a carrier and a semiconductor layer sequence mounted thereon and configured to generate primary light, and at least one conversion unit of at least one semiconductor material adapted to convert the primary light into at least one secondary light, wherein the semiconductor layer sequence and the converter unit are separate elements, the semiconductor layer sequence includes a plurality of pixels, the pixels are configured to be controlled electrically independently of each other, the carrier includes a plurality of control units configured to drive the pixels, all pixels of a first group are free of a conversion unit and are configured to emit the primary light, all pixels of a second group of pixels include exactly one conversion unit each and are configured to emit the at least one secondary light.

In an embodiment a method for producing an optoelectronic component includes providing a substrate, forming a first electrode, depositing an organic functional layer or a plurality of organic functional layers over the substrate by simultaneous vaporization from different sources of a first compound and of a second compound and of a matrix material and forming a second electrode, wherein at least one coordinate bond is formed by the first compound with the second compound and by the first compound with the matrix material and/or by the second compound with the matrix material.

An optoelectronic arrangement is specified, including a moulded body having a base surface, a first pixel group with a multiplicity of pixels assigned thereto, each having a first semiconductor region, a second semiconductor region and an active region, a multiplicity of separating structures arranged between the pixels, and at least one first contact structure having a first contact plane and a first contact location, which is freely accessible at the base surface, wherein the pixels of the first pixel group are arranged alongside one another at the top surface, the first semiconductor regions and/or the second semiconductor regions of adjacent pixels of the first pixel group are electrically insulated from one another by means of the separating structures, a first contact structure is assigned one-to-one to the first pixel group, and the first semiconductor regions of the pixels of the first pixel group are electrically conductively connected to one another by means of the first contact plane and are electrically contactable by means of the first contact location.

In an embodiment a method for producing an optoelectronic component includes providing a substrate, forming a first electrode, depositing an organic functional layer or a plurality of organic functional layers over the substrate by simultaneous vaporization from different sources of a first compound and of a second compound and of a matrix material and forming a second electrode, wherein at least one coordinate bond is formed by the first compound with the second compound and by the first compound with the matrix material and/or by the second compound with the matrix material.